2026 Martin Eickhoff: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	53	9179	8863	513	497	255	10950

Martin Eickhoff publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Martin Eickhoff sits on this spectrum.

50 publications 1,163+

This scientist: 255 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Martin Eickhoff D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Martin Eickhoff sits on this spectrum.

40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Martin Eickhoff is affiliated with the University of Bremen in Germany. Their research is primarily focused on the fields of materials science and engineering, with a significant body of work related to materials chemistry and the electronic, optical, and magnetic properties of materials.

Their main fields of study include:

Materials Science
Engineering

Within these broad disciplines, Eickhoff has concentrated on the following subfields:

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics

Key research topics covered by their publications are:

Ga2O3 and related materials
ZnO doping and properties
GaN-based semiconductor devices and materials
Advanced Photocatalysis Techniques
2D Materials and Applications
Perovskite Materials and Applications
Gas Sensing Nanomaterials and Sensors

Eickhoff has contributed to multiple research papers. Selected recent publications include:

"Influence of Polymorphism on the Electronic Structure of Ga₂O₃" (2020), published in Chemistry of Materials
"A comparison and evaluation of innovative parabolic trough collector concepts for large-scale application" (2021), published in Solar Energy
"Comparing Co-catalytic Effects of ZrO_x, SmO_x, and Pt on CO_x Methanation over Co-based Catalysts Prepared by Double Flame Spray Pyrolysis" (2021), published in ChemCatChem
"Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy" (2023), published in APL Materials
"Controlled Laser-Thinning of MoS₂ Nanolayers and Transformation to Amorphous MoO_x for 2D Monolayer Fabrication" (2020), published in ACS Applied Nano Materials

Frequent co-authors in Eickhoff's work include:

Andreas Rosenauer
Alexander Karg
Marco Schowalter
Manuel Alonso-Orts
Patrick Vogt

The scientist's work is frequently published in several specialized venues, reflecting their engagement in materials science and applied physics:

APL Materials
Crystal Growth & Design
Journal of Applied Physics
Advanced Materials Technologies
BIO Web of Conferences

Best Publications

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O Ambacher;J Majewski;C Miskys;A Link

1399
Citations
Binary copper oxide semiconductors: From materials towards devices

B. K. Meyer;A. Polity;D. Reppin;M. Becker

816
Citations
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman

371
Citations
Gas sensitive GaN/AlGaN-heterostructures

J. Schalwig;G. Müller;M. Eickhoff;O. Ambacher

278
Citations
Playing with Polarity

M. Stutzmann;O. Ambacher;M. Eickhoff;U. Karrer

273
Citations
Hydrogen response mechanism of Pt-GaN Schottky diodes

J. Schalwig;G. Müller;U. Karrer;M. Eickhoff

260
Citations
GaN-based heterostructures for sensor applications

M. Stutzmann;G. Steinhoff;M. Eickhoff;O. Ambacher

248
Citations
Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Maria de la Mata;Cesar Magen;Jaume Gazquez;Muhammad Iqbal Bakti Utama

203
Citations
AlxGa1–xN—A New Material System for Biosensors

G. Steinhoff;O. Purrucker;M. Tanaka;M. Stutzmann

202
Citations
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Florian Furtmayr;Martin Vielemeyer;Martin Stutzmann;Jordi Arbiol

192
Citations
Tin-Assisted Synthesis of ε − Ga 2 O 3 by Molecular Beam Epitaxy

M. Kracht;A. Karg;A. Karg;J. Schörmann;M. Weinhold

191
Citations
Direct biofunctionalization of semiconductors : A survey

Martin Stutzmann;Jose Antonio Garrido;Martin Eickhoff;Martin S. Brandt

186
Citations
Recording of cell action potentials with AlGaN∕GaN field-effect transistors

Georg Steinhoff;Barbara Baur;Günter Wrobel;Sven Ingebrandt

180
Citations
Chemical functionalization of GaN and AlN surfaces

B. Baur;G. Steinhoff;J. Hernando;O. Purrucker

166
Citations
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

M. Eickhoff;J. Schalwig;G. Steinhoff;O. Weidemann

159
Citations
Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

O. Weidemann;M. Hermann;G. Steinhoff;H. Wingbrant

142
Citations
Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Florian Furtmayr;Martin Vielemeyer;Martin Stutzmann;Andreas Laufer

136
Citations
Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

Thomas A. Wassner;Bernhard Laumer;Stefan Maier;Andreas Laufer

134
Citations
Group III-nitride-based gas sensors for combustion monitoring

J Schalwig;G Müller;M Eickhoff;O Ambacher

133
Citations
AlN/diamond heterojunction diodes

C. R. Miskys;J. A. Garrido;C. E. Nebel;M. Hermann

126
Citations