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D-Index & Metrics

Materials Science

D-Index
67
Citations
14640
World Ranking
5167
National Ranking
304

Alois Krost publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alois Krost sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 437 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alois Krost D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alois Krost sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Alois Krost is affiliated with Otto-von-Guericke University Magdeburg in Germany. The researcher's academic profile does not list recent papers, frequent co-authors, or frequent publication venues, which limits detailed insight into publication history and collaborative networks.

There are no records of book publications or awards associated with Alois Krost in the available data. Similarly, no main or subfields of study, or main topics of work, are documented for this scientist. This absence of information constrains a thorough overview of research focus or thematic specialization.

Due to the lack of specific research outputs, co-authorships, and documented disciplinary areas, it is not possible to delineate particular scientific contributions or the extent of impact within any given field based on current data.

Overall, the profile of Alois Krost reflects limited publicly accessible information regarding scholarly activity and research domains.

Best Publications

  • Binary copper oxide semiconductors: From materials towards devices

    B. K. Meyer;A. Polity;D. Reppin;M. Becker

  • Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

    Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

  • GaN-based optoelectronics on silicon substrates

    Alois Krost;Armin Dadgar

  • Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

    F. Heinrichsdorff;M.-H. Mao;N. Kirstaedter;A. Krost

  • Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

    A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

  • Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications.

    Hong Jin Fan;Woo Lee;Robert Hauschild;Marin Alexe

  • High Si and Ge n-type doping of GaN doping - Limits and impact on stress

    S. Fritze;A. Dadgar;H. Witte;M. Bügler

  • GaN-Based Devices on Si

    A. Krost;A. Dadgar

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach

    Hong Jin Fan;Woo Lee;Roland Scholz;Armin Dadgar

  • Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

    Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

  • GaN‐based epitaxy on silicon: stress measurements

    A. Krost;A. Dadgar;G. Strassburger;R. Clos

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • Atomic arrangement at the AlN/Si (111) interface

    R. Liu;Fernando Ponce;A. Dadgar;A. Krost

  • Recording of cell action potentials with AlGaN∕GaN field-effect transistors

    Georg Steinhoff;Barbara Baur;Günter Wrobel;Sven Ingebrandt

  • Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

    A Dadgar;F Schulze;M Wienecke;A Gadanecz

  • The origin of stress reduction by low-temperature AlN interlayers

    J. Bläsing;A. Reiher;A. Dadgar;A. Diez

  • Growth of blue GaN LED structures on 150-mm Si(1 1 1)

    A. Dadgar;C. Hums;A. Diez;J. Bläsing

  • Reduction of stress at the initial stages of GaN growth on Si(111)

    A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  • Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

    A. Reiher;J. Bläsing;A. Dadgar;A. Diez

Frequent Co-Authors

Armin Dadgar
Armin Dadgar Otto-von-Guericke University Magdeburg
Jürgen Bläsing
Jürgen Bläsing Otto-von-Guericke University Magdeburg
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Marius Grundmann
Marius Grundmann Leipzig University
Peter Werner
Peter Werner Max Planck Society
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Erhard Kohn
Erhard Kohn North Carolina State University
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Margit Zacharias
Margit Zacharias University of Freiburg

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