Alois Krost

Overview

Best Publications

• Binary copper oxide semiconductors: From materials towards devices

  B. K. Meyer;A. Polity;D. Reppin;M. Becker

  816
  Citations

• Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

  Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

  451
  Citations

• GaN-based optoelectronics on silicon substrates

  Alois Krost;Armin Dadgar

  435
  Citations

• Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

  F. Heinrichsdorff;M.-H. Mao;N. Kirstaedter;A. Krost

  332
  Citations

• Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

  A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

  262
  Citations

• Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications.

  Hong Jin Fan;Woo Lee;Robert Hauschild;Marin Alexe

  259
  Citations

• High Si and Ge n-type doping of GaN doping - Limits and impact on stress

  S. Fritze;A. Dadgar;H. Witte;M. Bügler

  240
  Citations

• GaN-Based Devices on Si

  A. Krost;A. Dadgar

  238
  Citations

• MOVPE growth of GaN on Si(1 1 1) substrates

  Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  219
  Citations

• Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach

  Hong Jin Fan;Woo Lee;Roland Scholz;Armin Dadgar

  200
  Citations

• Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

  Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

  198
  Citations

• GaN‐based epitaxy on silicon: stress measurements

  A. Krost;A. Dadgar;G. Strassburger;R. Clos

  197
  Citations

• High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

  A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  192
  Citations

• Atomic arrangement at the AlN/Si (111) interface

  R. Liu;Fernando Ponce;A. Dadgar;A. Krost

  183
  Citations

• Recording of cell action potentials with AlGaN∕GaN field-effect transistors

  Georg Steinhoff;Barbara Baur;Günter Wrobel;Sven Ingebrandt

  180
  Citations

• Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

  A Dadgar;F Schulze;M Wienecke;A Gadanecz

  179
  Citations

• The origin of stress reduction by low-temperature AlN interlayers

  J. Bläsing;A. Reiher;A. Dadgar;A. Diez

  177
  Citations

• Growth of blue GaN LED structures on 150-mm Si(1 1 1)

  A. Dadgar;C. Hums;A. Diez;J. Bläsing

  166
  Citations

• Reduction of stress at the initial stages of GaN growth on Si(111)

  A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  161
  Citations

• Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

  A. Reiher;J. Bläsing;A. Dadgar;A. Diez

  156
  Citations