World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
13115
World Ranking
1643
National Ranking
56

Materials Science

D-Index
60
Citations
13419
World Ranking
7024
National Ranking
380

Overview

Takashi Egawa is affiliated with the Nagoya Institute of Technology in Japan. Their research primarily focuses on semiconductor devices and materials, with a particular emphasis on GaN-based technologies. Egawa's work spans several interconnected fields including Physics and Astronomy, Engineering, and Materials Science. These areas reflect a multidisciplinary approach to both fundamental and applied aspects of semiconductor research.

The scientist has contributed extensively to the study of various specialized subfields, notably Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Biomedical Engineering, and Atomic and Molecular Physics, and Optics. Their research topics cover:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Acoustic Wave Resonator Technologies
  • Metal and Thin Film Mechanics
  • Semiconductor Quantum Structures and Devices

Egawa has collaborated frequently with several researchers, including Makoto Miyoshi, Pradip Dalapati, Kosuke Yamamoto, Taiki Nakabayashi, and Tetsuya Takeuchi. These collaborations have resulted in a significant volume of joint publications.

Their research papers have been published in a variety of scientific journals, indicating a presence in both applied and theoretical domains. Frequent publication venues include:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Semiconductor Science and Technology
  • physica status solidi (a)
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Significant recent publications by Egawa include:

  • Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures (2020, Superlattices and Microstructures)
  • Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template (2020, Optical Materials)
  • Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy (2020, CrystEngComm)
  • Bias-controlled photocurrent generation process in GaN-based ultraviolet p-i-n photodetectors fabricated with a thick Al2O3 passivation layer (2021, Optik)
  • Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature (2021, Sensors and Actuators A Physical)

Egawa's scholarly contributions illustrate an ongoing engagement with advanced materials and device physics, particularly in relation to wide-bandgap semiconductors like GaN and Ga2O3. Their work includes detailed experimental investigations and device evaluations relevant to optoelectronics and high-performance semiconductor applications.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

    G. Yu;G. Wang;H. Ishikawa;Masayoshi Umeno

  • Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

    S.L. Selvaraj;T. Suzue;T. Egawa

  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Thermal stability of GaN on (111)Si substrate

    Hiroyasu Ishikawa;Kensaku Yamamoto;Takashi Egawa;Tetsuo Soga

  • Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

    N Miura;T Nanjo;M Suita;T Oishi

  • Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

    S. Arulkumaran;T. Egawa;S. Matsui;H. Ishikawa

  • High power mid-infrared interband cascade lasers based on type-II quantum wells

    Rui Q. Yang;B. H. Yang;D. Zhang;C.-H. Lin

  • Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

    I. B. Rowena;S. L. Selvaraj;T. Egawa

  • AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

    M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno

  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

    N. Nakada;M. Nakaji;Hiroyasu Ishikawa;T. Egawa

  • High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

    S. Arulkumaran;T. Egawa;Hiroyasu Ishikawa;T. Jimbo

  • Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition.

    Takashi Egawa;Tetsuji Moku;Hiroyasu Ishikawa;Kouji Ohtsuka

  • Trivalent Al3+ ion conduction in aluminum tungstate solid

    Yasuyuki Kobayashi;Takashi Egawa;Shinji Tamura;Nobuhito Imanaka

  • Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

    Dennis Christy;Takashi Egawa;Yoshiki Yano;Hiroki Tokunaga

  • High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

    M. Miyoshi;H. Ishikawa;T. Egawa;K. Asai

  • 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

    S. L. Selvaraj;A. Watanabe;A. Wakejima;T. Egawa

  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

    T. Egawa;Hiroyasu Ishikawa;M. Umeno;T. Jimbo

Frequent Co-Authors

Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Hiroyasu Ishikawa
Hiroyasu Ishikawa Shibaura Institute of Technology
Masayoshi Umeno
Masayoshi Umeno Chubu University
Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Hiroshi Amano
Hiroshi Amano Nagoya University
Nobuhito Imanaka
Nobuhito Imanaka Osaka University
Geok Ing Ng
Geok Ing Ng Nanyang Technological University
Gin-ya Adachi
Gin-ya Adachi Osaka University

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