World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
13115
World Ranking
1643
National Ranking
56

Materials Science

D-Index
60
Citations
13419
World Ranking
7022
National Ranking
380

Takashi Egawa publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Takashi Egawa sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 644 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Takashi Egawa D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Takashi Egawa sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Takashi Egawa is affiliated with the Nagoya Institute of Technology in Japan. Their research primarily focuses on semiconductor devices and materials, with a particular emphasis on GaN-based technologies. Egawa's work spans several interconnected fields including Physics and Astronomy, Engineering, and Materials Science. These areas reflect a multidisciplinary approach to both fundamental and applied aspects of semiconductor research.

The scientist has contributed extensively to the study of various specialized subfields, notably Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Biomedical Engineering, and Atomic and Molecular Physics, and Optics. Their research topics cover:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Acoustic Wave Resonator Technologies
  • Metal and Thin Film Mechanics
  • Semiconductor Quantum Structures and Devices

Egawa has collaborated frequently with several researchers, including Makoto Miyoshi, Pradip Dalapati, Kosuke Yamamoto, Taiki Nakabayashi, and Tetsuya Takeuchi. These collaborations have resulted in a significant volume of joint publications.

Their research papers have been published in a variety of scientific journals, indicating a presence in both applied and theoretical domains. Frequent publication venues include:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Semiconductor Science and Technology
  • physica status solidi (a)
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Significant recent publications by Egawa include:

  • Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures (2020, Superlattices and Microstructures)
  • Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template (2020, Optical Materials)
  • Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy (2020, CrystEngComm)
  • Bias-controlled photocurrent generation process in GaN-based ultraviolet p-i-n photodetectors fabricated with a thick Al2O3 passivation layer (2021, Optik)
  • Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature (2021, Sensors and Actuators A Physical)

Egawa's scholarly contributions illustrate an ongoing engagement with advanced materials and device physics, particularly in relation to wide-bandgap semiconductors like GaN and Ga2O3. Their work includes detailed experimental investigations and device evaluations relevant to optoelectronics and high-performance semiconductor applications.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

    G. Yu;G. Wang;H. Ishikawa;Masayoshi Umeno

  • Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

    S.L. Selvaraj;T. Suzue;T. Egawa

  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Thermal stability of GaN on (111)Si substrate

    Hiroyasu Ishikawa;Kensaku Yamamoto;Takashi Egawa;Tetsuo Soga

  • Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

    N Miura;T Nanjo;M Suita;T Oishi

  • Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

    S. Arulkumaran;T. Egawa;S. Matsui;H. Ishikawa

  • High power mid-infrared interband cascade lasers based on type-II quantum wells

    Rui Q. Yang;B. H. Yang;D. Zhang;C.-H. Lin

  • Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

    I. B. Rowena;S. L. Selvaraj;T. Egawa

  • AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

    M. Hikita;M. Yanagihara;K. Nakazawa;H. Ueno

  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

    N. Nakada;M. Nakaji;Hiroyasu Ishikawa;T. Egawa

  • High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

    S. Arulkumaran;T. Egawa;Hiroyasu Ishikawa;T. Jimbo

  • Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition.

    Takashi Egawa;Tetsuji Moku;Hiroyasu Ishikawa;Kouji Ohtsuka

  • Trivalent Al3+ ion conduction in aluminum tungstate solid

    Yasuyuki Kobayashi;Takashi Egawa;Shinji Tamura;Nobuhito Imanaka

  • Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

    Dennis Christy;Takashi Egawa;Yoshiki Yano;Hiroki Tokunaga

  • High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

    M. Miyoshi;H. Ishikawa;T. Egawa;K. Asai

  • 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

    S. L. Selvaraj;A. Watanabe;A. Wakejima;T. Egawa

  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

    T. Egawa;Hiroyasu Ishikawa;M. Umeno;T. Jimbo

Frequent Co-Authors

Takashi Jimbo
Takashi Jimbo Nagoya Institute of Technology
Hiroyasu Ishikawa
Hiroyasu Ishikawa Shibaura Institute of Technology
Masayoshi Umeno
Masayoshi Umeno Chubu University
Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Hiroshi Amano
Hiroshi Amano Nagoya University
Nobuhito Imanaka
Nobuhito Imanaka Osaka University
Geok Ing Ng
Geok Ing Ng Nanyang Technological University
Gin-ya Adachi
Gin-ya Adachi Osaka University

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