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Materials Science

D-Index
62
Citations
12526
World Ranking
6544
National Ranking
334

Overview

Takashi Jimbo is affiliated with the Nagoya Institute of Technology in Japan. Their academic profile indicates involvement in scientific research and connections within the Japanese technological academic community.

Aspects of their research interests, collaborations, and publication activity are not detailed through specific topics, papers, or frequent coauthors. There are no records of recent or prominent paper publications, which limits the information on current research directions or areas of specialization.

The available data do not list any frequent publication venues associated with Takashi Jimbo, nor do they detail any book publications or contributions to edited volumes.

Similarly, there is no information about main fields of study, subfields, or specific research topics that Takashi Jimbo has concentrated on. This absence suggests a limited public footprint or incomplete data coverage rather than a lack of specialization or research activity.

No awards or distinctions have been recorded in the data, and there is no indication that Takashi Jimbo is deceased.

Best Publications

  • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

    G. Yu;G. Wang;H. Ishikawa;Masayoshi Umeno

  • Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • GaN on Si Substrate with AlGaN/AlN Intermediate Layer

    Hiroyasu Ishikawa;Guang Yuan Zhao;Naoyuki Nakada;Takashi Egawa

  • Optical properties and X-ray photoelectron spectroscopic study of pure and Pb-doped TiO2 thin films

    M.M. Rahman;K.M. Krishna;T. Soga;T. Jimbo

  • Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Thermal stability of GaN on (111)Si substrate

    Hiroyasu Ishikawa;Kensaku Yamamoto;Takashi Egawa;Tetsuo Soga

  • Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

    N Miura;T Nanjo;M Suita;T Oishi

  • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

    N. Nakada;M. Nakaji;Hiroyasu Ishikawa;T. Egawa

  • A simple method of producing single-walled carbon nanotubes from a natural precursor: Eucalyptus oil

    Pradip Ghosh;Rakesh A. Afre;T. Soga;T. Jimbo

  • Characterization of transparent conducting CuI thin films prepared by pulse laser deposition technique

    P.M Sirimanne;M Rusop;T Shirata;T Soga

  • Structural and optical properties of diamond and nano-diamond films grown by microwave plasma chemical vapor deposition

    T. Sharda;M.M. Rahaman;Y. Nukaya;T. Soga

  • High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

    S. Arulkumaran;T. Egawa;Hiroyasu Ishikawa;T. Jimbo

  • Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition.

    Takashi Egawa;Tetsuji Moku;Hiroyasu Ishikawa;Kouji Ohtsuka

  • Growth of vertically aligned carbon nanotubes on silicon and quartz substrate by spray pyrolysis of a natural precursor: Turpentine oil

    Rakesh A. Afre;T. Soga;T. Jimbo;Mukul Kumar

  • Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    Y. Hayashi;G. Yu;M. M. Rahman;K. M. Krishna

  • Intrinsic ferromagnetism and magnetic anisotropy in Gd-doped ZnO thin films synthesized by pulsed spray pyrolysis method

    M. Subramanian;P. Thakur;M. Tanemura;T. Hihara

  • Carbon nanotubes by spray pyrolysis of turpentine oil at different temperatures and their studies

    Rakesh A. Afre;T. Soga;T. Jimbo;Mukul Kumar

  • Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

    T. Egawa;Hiroyasu Ishikawa;M. Umeno;T. Jimbo

  • Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor: A Natural Source

    Sharif Md. Mominuzzaman;Kalaga Murali Krishna;Tetsuo Soga;Takashi Jimbo

  • Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

  • Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire

    S. Arulkumaran;T. Egawa;H. Ishikawa;T. Jimbo

Frequent Co-Authors

Tetsuo Soga
Tetsuo Soga Nagoya Institute of Technology
Masayoshi Umeno
Masayoshi Umeno Chubu University
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Hiroyasu Ishikawa
Hiroyasu Ishikawa Shibaura Institute of Technology
Masaki Tanemura
Masaki Tanemura Nagoya Institute of Technology
Yoshinori Ando
Yoshinori Ando Meijo University
Kenji Kaneko
Kenji Kaneko Kyushu University
Takao Yonehara
Takao Yonehara Canon (Japan)
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University

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