World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
78
Citations
41911
World Ranking
2896
National Ranking
813

Eicke R. Weber publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Eicke R. Weber sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 573 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Eicke R. Weber D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Eicke R. Weber sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 78 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2001 - Fellow of American Physical Society (APS) Citation For his pioneering studies of defects in semiconductors, in particular his research on the microscopic properties and gettering behavior of transition metal impurities

Overview

Eicke R. Weber is affiliated with the University of California, Berkeley in the United States. Their research primarily focuses on the physics and engineering of semiconductor materials and devices, with a strong emphasis on GaN-based technologies.

Their work spans main fields such as Physics and Astronomy and Engineering, with specific contributions in subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Materials Chemistry, and Mechanics of Materials.

The research topics covered by Weber include:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Semiconductor Lasers and Optical Devices
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Ga2O3 and related materials

Recent significant publications demonstrate active engagement with cutting-edge research in semiconductor lasers and materials:

  • "GaN Laser Diode Technology for Visible-Light Communications," 2022, Electronics
  • "Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium," 2021, Materials
  • "Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy," 2020, Optics Express
  • "Role of dislocations in nitride laser diodes with different indium content," 2021, Scientific Reports
  • "Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes," 2020, IEEE Photonics Journal

Frequent co-authors in their collaborative research efforts include:

  • Szymon Grzanka
  • Dario Schiavon
  • Łucja Marona
  • Anna Kafar
  • Szymon Stańczyk

Weber frequently publishes in venues such as Materials, Optics Express, Scientific Reports, Optical Materials Express, and Micromachines. These journals reflect the interdisciplinary nature of their work bridging materials science and optics.

The scientist has been recognized as a Fellow of the American Physical Society in 2001. This acknowledgment cited pioneering studies in semiconductor defect research, particularly focusing on the microscopic properties and gettering behavior of transition metal impurities.

Best Publications

  • ROOM-TEMPERATURE ULTRAVIOLET NANOWIRE NANOLASERS

    Michael H. Huang;Samuel Mao;Henning Feick;Haoquan Yan

  • Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

    Michael H. Huang;Yiying Wu;Henning Feick;Ngan Tran

  • Transition metals in silicon

    Eicke R. Weber

  • Strain-related phenomena in GaN thin films

    C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  • Iron and its complexes in silicon

    A.A. Istratov;H. Hieslmair;E.R. Weber

  • A systematic analysis of defects in ion-implanted silicon

    K. S. Jones;S. Prussin;E. R. Weber

  • Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Arun Majumdar;Ali Shakouri;Timothy D. Sands;Peidong Yang

  • Nanostructures, assembling method for nanowires, and device assembled from nanowires

    Rong Fan;Henning Feick;Michael Huang;Hannes Kind

  • Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

    G Lindström;M Ahmed;S Albergo;P Allport

  • Dislocation-Related Photoluminescence in Silicon

    R. Sauer;J. Weber;J. Stolz;E. R. Weber

  • Intersubband transitions in quantum wells physics and device applications

    Eicke R Weber;H C Liu;Robert K Willardson

  • Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

    M. Kaminska;Z. Liliental-Weber;E. R. Weber;T. George

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Physics of Copper in Silicon

    Andrei A. Istratov;Eicke R. Weber

  • Identification of AsGa antisites in plastically deformed GaAs

    E. R. Weber;H. Ennen;U. Kaufmann;J. Windscheif

  • Iron contamination in silicon technology

    A.A. Istratov;H. Hieslmair;E.R. Weber

  • Terawatt-scale photovoltaics: Trajectories and challenges

    Nancy M. Haegel;Robert Margolis;Tonio Buonassisi;David Feldman

  • Electrical properties of dislocations and point defects in plastically deformed silicon.

    P. Omling;E. R. Weber;L. Montelius;H. Alexander

  • Native point defects in low-temperature-grown GaAs

    X. Liu;A. Prasad;J. Nishio;E. R. Weber

  • Electrical properties and recombination activity of copper, nickel and cobalt in silicon

    A.A. Istratov;E.R. Weber

  • Semiconductors and Semimetals: A Treatise

    R.K. Willardson;Albert C. Beer;Eicke R. Weber

Frequent Co-Authors

Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Nathan Newman
Nathan Newman Arizona State University
Christian Kisielowski
Christian Kisielowski Lawrence Berkeley National Laboratory
W. E. Spicer
W. E. Spicer Stanford University
Matthew D. Pickett
Matthew D. Pickett Hewlett-Packard (United States)
Kin Man Yu
Kin Man Yu City University of Hong Kong
Matthew A. Marcus
Matthew A. Marcus Lawrence Berkeley National Laboratory
Timothy D. Sands
Timothy D. Sands Virginia Tech
Weimin Chen
Weimin Chen Linköping University

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