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Materials Science

D-Index
78
Citations
41911
World Ranking
2898
National Ranking
815

Research.com Recognitions

  • 2001 - Fellow of American Physical Society (APS) Citation For his pioneering studies of defects in semiconductors, in particular his research on the microscopic properties and gettering behavior of transition metal impurities

Overview

Eicke R. Weber is affiliated with the University of California, Berkeley in the United States. Their research primarily focuses on the physics and engineering of semiconductor materials and devices, with a strong emphasis on GaN-based technologies.

Their work spans main fields such as Physics and Astronomy and Engineering, with specific contributions in subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Materials Chemistry, and Mechanics of Materials.

The research topics covered by Weber include:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Semiconductor Lasers and Optical Devices
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Ga2O3 and related materials

Recent significant publications demonstrate active engagement with cutting-edge research in semiconductor lasers and materials:

  • "GaN Laser Diode Technology for Visible-Light Communications," 2022, Electronics
  • "Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium," 2021, Materials
  • "Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy," 2020, Optics Express
  • "Role of dislocations in nitride laser diodes with different indium content," 2021, Scientific Reports
  • "Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes," 2020, IEEE Photonics Journal

Frequent co-authors in their collaborative research efforts include:

  • Szymon Grzanka
  • Dario Schiavon
  • Łucja Marona
  • Anna Kafar
  • Szymon Stańczyk

Weber frequently publishes in venues such as Materials, Optics Express, Scientific Reports, Optical Materials Express, and Micromachines. These journals reflect the interdisciplinary nature of their work bridging materials science and optics.

The scientist has been recognized as a Fellow of the American Physical Society in 2001. This acknowledgment cited pioneering studies in semiconductor defect research, particularly focusing on the microscopic properties and gettering behavior of transition metal impurities.

Best Publications

  • ROOM-TEMPERATURE ULTRAVIOLET NANOWIRE NANOLASERS

    Michael H. Huang;Samuel Mao;Henning Feick;Haoquan Yan

  • Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

    Michael H. Huang;Yiying Wu;Henning Feick;Ngan Tran

  • Transition metals in silicon

    Eicke R. Weber

  • Strain-related phenomena in GaN thin films

    C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  • Iron and its complexes in silicon

    A.A. Istratov;H. Hieslmair;E.R. Weber

  • A systematic analysis of defects in ion-implanted silicon

    K. S. Jones;S. Prussin;E. R. Weber

  • Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Arun Majumdar;Ali Shakouri;Timothy D. Sands;Peidong Yang

  • Nanostructures, assembling method for nanowires, and device assembled from nanowires

    Rong Fan;Henning Feick;Michael Huang;Hannes Kind

  • Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

    G Lindström;M Ahmed;S Albergo;P Allport

  • Dislocation-Related Photoluminescence in Silicon

    R. Sauer;J. Weber;J. Stolz;E. R. Weber

  • Intersubband transitions in quantum wells physics and device applications

    Eicke R Weber;H C Liu;Robert K Willardson

  • Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

    M. Kaminska;Z. Liliental-Weber;E. R. Weber;T. George

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Physics of Copper in Silicon

    Andrei A. Istratov;Eicke R. Weber

  • Identification of AsGa antisites in plastically deformed GaAs

    E. R. Weber;H. Ennen;U. Kaufmann;J. Windscheif

  • Iron contamination in silicon technology

    A.A. Istratov;H. Hieslmair;E.R. Weber

  • Terawatt-scale photovoltaics: Trajectories and challenges

    Nancy M. Haegel;Robert Margolis;Tonio Buonassisi;David Feldman

  • Electrical properties of dislocations and point defects in plastically deformed silicon.

    P. Omling;E. R. Weber;L. Montelius;H. Alexander

  • Native point defects in low-temperature-grown GaAs

    X. Liu;A. Prasad;J. Nishio;E. R. Weber

  • Electrical properties and recombination activity of copper, nickel and cobalt in silicon

    A.A. Istratov;E.R. Weber

  • Semiconductors and Semimetals: A Treatise

    R.K. Willardson;Albert C. Beer;Eicke R. Weber

Frequent Co-Authors

Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Nathan Newman
Nathan Newman Arizona State University
Christian Kisielowski
Christian Kisielowski Lawrence Berkeley National Laboratory
W. E. Spicer
W. E. Spicer Stanford University
Matthew D. Pickett
Matthew D. Pickett Hewlett-Packard (United States)
Kin Man Yu
Kin Man Yu City University of Hong Kong
Matthew A. Marcus
Matthew A. Marcus Lawrence Berkeley National Laboratory
Timothy D. Sands
Timothy D. Sands Virginia Tech
Weimin Chen
Weimin Chen Linköping University

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