World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
33
Citations
12004
World Ranking
9310
National Ranking
2604

Matthew D. Pickett publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Matthew D. Pickett sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 59 publications — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Matthew D. Pickett D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Matthew D. Pickett sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 33 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Matthew D. Pickett is affiliated with Hewlett-Packard in the United States. Their research primarily focuses on the fields of Computer Science and its subfield Hardware and Architecture. The main topics addressed in their work include Parallel Computing and Optimization Techniques, as well as Embedded Systems Design Techniques.

Pickett has contributed to the scientific community with publications in venues such as the 2022 IEEE International Solid-State Circuits Conference (ISSCC). Their recent paper titled Zen3: The AMD 2nd-Generation 7nm x86-64 Microprocessor Core was published in 2022 at the same conference and has been cited 28 times.

Their frequent co-authors include:

  • Thomas D. Burd
  • Wilson Li
  • James Pistole
  • Srividhya Venkataraman
  • Michael T. McCabe

Frequent publication venues where Pickett's work appears include:

  • 2022 IEEE International Solid-State Circuits Conference (ISSCC)

The scientific output reflects a focus on the development and optimization of hardware components and embedded systems, integrating parallel computing methods. These research interests align with the ongoing advancements in microprocessor architecture and embedded technology design.

Best Publications

  • Memristive switching mechanism for metal/oxide/metal nanodevices.

    J. Joshua Yang;Matthew D. Pickett;Xuema Li;Douglas A. A. Ohlberg

  • A scalable neuristor built with Mott memristors

    Matthew D. Pickett;Gilberto Medeiros-Ribeiro;R. Stanley Williams

  • The mechanism of electroforming of metal oxide memristive switches

    J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg

  • Switching dynamics in titanium dioxide memristive devices

    Matthew D. Pickett;Dmitri B. Strukov;Julien L. Borghetti;J. Joshua Yang

  • High switching endurance in TaOx memristive devices

    J. Joshua Yang;M.-X. Zhang;John Paul Strachan;Feng Miao

  • Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

    Matthew D Pickett;R Stanley Williams

  • Direct identification of the conducting channels in a functioning memristive device.

    John Paul Strachan;Matthew D. Pickett;J. Joshua Yang;Shaul Aloni

  • SPICE modeling of memristors

    Hisham Abdalla;Matthew D. Pickett

  • Engineering nonlinearity into memristors for passive crossbar applications

    J. Joshua Yang;M.-X. Zhang;Matthew D. Pickett;Feng Miao

  • Chemical Natures and Distributions of Metal Impurities in Multicrystalline Silicon Materials

    T. Buonassisi;A. A. Istratov;M. D. Pickett;M. Heuer

  • Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2

    Suhas Kumar;Suhas Kumar;Matthew D. Pickett;John Paul Strachan;Gary Gibson

  • State Dynamics and Modeling of Tantalum Oxide Memristors

    J. P. Strachan;A. C. Torrezan;Feng Miao;M. D. Pickett

  • Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    A.A. Istratov;A.A. Istratov;T. Buonassisi;T. Buonassisi;M.D. Pickett;M.D. Pickett;M. Heuer;M. Heuer

  • Metal/TiO2 interfaces for memristive switches

    J. Joshua Yang;John Paul Strachan;Feng Miao;Min-Xian Zhang

  • Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

    T. Buonassisi;A. A. Istratov;M. D. Pickett;M. A. Marcus

  • Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

    Feng Miao;Wei Yi;Ilan Goldfarb;J. Joshua Yang

  • Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System

    Matthew D. Pickett;Julien Borghetti;J. Joshua Yang;Gilberto Medeiros-Ribeiro

  • Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution

    Gilberto Medeiros-Ribeiro;Frederick A. Perner;Richard J. Carter;Hisham Abdalla

  • Electrical transport and thermometry of electroformed titanium dioxide memristive switches

    Julien Borghetti;Dmitri B. Strukov;Matthew D. Pickett;J. Joshua Yang

  • Iron point defect reduction in multicrystalline silicon solar cells

    Matthew D. Pickett;Tonio Buonassisi

  • A memristor-based nonvolatile latch circuit.

    Warren Robinett;Matthew Pickett;Julien Borghetti;Qiangfei Xia

  • Feedback write scheme for memristive switching devices

    Wei Yi;Frederick Perner;Muhammad Shakeel Qureshi;Hisham Abdalla

Frequent Co-Authors

J. Joshua Yang
J. Joshua Yang University of Southern California
R. Stanley Williams
R. Stanley Williams Texas A&M University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Gilberto Medeiros-Ribeiro
Gilberto Medeiros-Ribeiro Universidade Federal de Minas Gerais
Feng Miao
Feng Miao Nanjing University
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Matthew A. Marcus
Matthew A. Marcus Lawrence Berkeley National Laboratory
Wei Wu
Wei Wu Wuhan University
Dmitri B. Strukov
Dmitri B. Strukov University of California, Santa Barbara

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