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D-Index & Metrics

Engineering and Technology

D-Index
33
Citations
12004
World Ranking
9308
National Ranking
2603

Overview

Matthew D. Pickett is affiliated with Hewlett-Packard in the United States. Their research primarily focuses on the fields of Computer Science and its subfield Hardware and Architecture. The main topics addressed in their work include Parallel Computing and Optimization Techniques, as well as Embedded Systems Design Techniques.

Pickett has contributed to the scientific community with publications in venues such as the 2022 IEEE International Solid-State Circuits Conference (ISSCC). Their recent paper titled Zen3: The AMD 2nd-Generation 7nm x86-64 Microprocessor Core was published in 2022 at the same conference and has been cited 28 times.

Their frequent co-authors include:

  • Thomas D. Burd
  • Wilson Li
  • James Pistole
  • Srividhya Venkataraman
  • Michael T. McCabe

Frequent publication venues where Pickett's work appears include:

  • 2022 IEEE International Solid-State Circuits Conference (ISSCC)

The scientific output reflects a focus on the development and optimization of hardware components and embedded systems, integrating parallel computing methods. These research interests align with the ongoing advancements in microprocessor architecture and embedded technology design.

Best Publications

  • Memristive switching mechanism for metal/oxide/metal nanodevices.

    J. Joshua Yang;Matthew D. Pickett;Xuema Li;Douglas A. A. Ohlberg

  • A scalable neuristor built with Mott memristors

    Matthew D. Pickett;Gilberto Medeiros-Ribeiro;R. Stanley Williams

  • The mechanism of electroforming of metal oxide memristive switches

    J Joshua Yang;Feng Miao;Matthew D Pickett;Douglas A A Ohlberg

  • Switching dynamics in titanium dioxide memristive devices

    Matthew D. Pickett;Dmitri B. Strukov;Julien L. Borghetti;J. Joshua Yang

  • High switching endurance in TaOx memristive devices

    J. Joshua Yang;M.-X. Zhang;John Paul Strachan;Feng Miao

  • Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

    Matthew D Pickett;R Stanley Williams

  • Direct identification of the conducting channels in a functioning memristive device.

    John Paul Strachan;Matthew D. Pickett;J. Joshua Yang;Shaul Aloni

  • SPICE modeling of memristors

    Hisham Abdalla;Matthew D. Pickett

  • Engineering nonlinearity into memristors for passive crossbar applications

    J. Joshua Yang;M.-X. Zhang;Matthew D. Pickett;Feng Miao

  • Chemical Natures and Distributions of Metal Impurities in Multicrystalline Silicon Materials

    T. Buonassisi;A. A. Istratov;M. D. Pickett;M. Heuer

  • Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2

    Suhas Kumar;Suhas Kumar;Matthew D. Pickett;John Paul Strachan;Gary Gibson

  • State Dynamics and Modeling of Tantalum Oxide Memristors

    J. P. Strachan;A. C. Torrezan;Feng Miao;M. D. Pickett

  • Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    A.A. Istratov;A.A. Istratov;T. Buonassisi;T. Buonassisi;M.D. Pickett;M.D. Pickett;M. Heuer;M. Heuer

  • Metal/TiO2 interfaces for memristive switches

    J. Joshua Yang;John Paul Strachan;Feng Miao;Min-Xian Zhang

  • Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

    T. Buonassisi;A. A. Istratov;M. D. Pickett;M. A. Marcus

  • Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

    Feng Miao;Wei Yi;Ilan Goldfarb;J. Joshua Yang

  • Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System

    Matthew D. Pickett;Julien Borghetti;J. Joshua Yang;Gilberto Medeiros-Ribeiro

  • Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution

    Gilberto Medeiros-Ribeiro;Frederick A. Perner;Richard J. Carter;Hisham Abdalla

  • Electrical transport and thermometry of electroformed titanium dioxide memristive switches

    Julien Borghetti;Dmitri B. Strukov;Matthew D. Pickett;J. Joshua Yang

  • Iron point defect reduction in multicrystalline silicon solar cells

    Matthew D. Pickett;Tonio Buonassisi

  • A memristor-based nonvolatile latch circuit.

    Warren Robinett;Matthew Pickett;Julien Borghetti;Qiangfei Xia

  • Feedback write scheme for memristive switching devices

    Wei Yi;Frederick Perner;Muhammad Shakeel Qureshi;Hisham Abdalla

Frequent Co-Authors

J. Joshua Yang
J. Joshua Yang University of Southern California
R. Stanley Williams
R. Stanley Williams Texas A&M University
John Paul Strachan
John Paul Strachan Hewlett-Packard (United States)
Gilberto Medeiros-Ribeiro
Gilberto Medeiros-Ribeiro Universidade Federal de Minas Gerais
Feng Miao
Feng Miao Nanjing University
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Matthew A. Marcus
Matthew A. Marcus Lawrence Berkeley National Laboratory
Wei Wu
Wei Wu Wuhan University
Dmitri B. Strukov
Dmitri B. Strukov University of California, Santa Barbara

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