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Electronics and Electrical Engineering
Italy
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
86
Citations
27719
World Ranking
363
National Ranking
7

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Italy Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Italy Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Italy Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Italy Leader Award
  • 2019 - IEEE Fellow For contributions to nonvolatile semiconductor memories

Overview

Daniele Ielmini is affiliated with the Polytechnic University of Milan in Italy. Their research primarily spans the fields of Engineering and Neuroscience, with a particular focus on Electrical and Electronic Engineering and Cellular and Molecular Neuroscience. Their work also covers several interdisciplinary areas including Artificial Intelligence, Cognitive Neuroscience, and Materials Chemistry.

The scientist's main topics of research include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neural Dynamics and Brain Function, Neuroscience and Neural Engineering, Neural Networks and Reservoir Computing, Semiconductor Materials and Devices, and Photoreceptor and Optogenetics Research.

They have published extensively in notable venues such as IEEE Transactions on Electron Devices, arXiv (Cornell University), Advanced Intelligent Systems, Advanced Electronic Materials, and Nature Communications.

Among their recent papers are:

  • "Embedded Devices for Neuromorphic Time-Series Assessment" (2022), published in Maryland Shared Open Access Repository (USMAI Consortium)
  • "In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks" (2021), published in Nature Materials
  • "Hardware implementation of memristor-based artificial neural networks" (2024), published in Nature Communications
  • "Hybrid 2D-CMOS microchips for memristive applications" (2023), published in Nature
  • "Standards for the Characterization of Endurance in Resistive Switching Devices" (2021), published in ACS Nano

Daniele Ielmini has collaborated frequently with several coauthors, including Piergiulio Mannocci, Giacomo Pedretti, Saverio Ricci, Matteo Farronato, and Artem Glukhov.

They are also an author of book publications, including a title titled Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations (2021), published by Springer Nature.

In 2019, Daniele Ielmini was awarded the IEEE Fellow distinction for contributions to nonvolatile semiconductor memories.

Best Publications

  • In-memory computing with resistive switching devices

    Daniele Ielmini;H.-S. Philip Wong

  • Phase Change Materials and Their Application to Nonvolatile Memories

    Simone Raoux;Wojciech Wełnic;Daniele Ielmini

  • Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

    Daniele Ielmini

  • Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

    Daniele Ielmini;Yuegang Zhang

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

    D. Ielmini

  • Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

    Stefano Larentis;Federico Nardi;Simone Balatti;David C. Gilmer

  • Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

    U. Russo;D. Ielmini;C. Cagli;A.L. Lacaita

  • Reliability study of phase-change nonvolatile memories

    A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli

  • Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

    U. Russo;D. Ielmini;C. Cagli;A.L. Lacaita

  • Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

    Daniele Ielmini

  • Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications

    Daniele Ielmini;Rainer Waser

  • In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks.

    Gianluca Milano;Giacomo Pedretti;Kevin Montano;Saverio Ricci

  • Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

    U. Russo;D. Kamalanathan;D. Ielmini;A.L. Lacaita

  • Electronic switching effect and phase-change transition in chalcogenide materials

    A. Redaelli;A. Pirovano;F. Pellizzer;A.L. Lacaita

  • Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

    Daniele Ielmini

  • Electrothermal and phase-change dynamics in chalcogenide-based memories

    A.L. Lacaita;A. Redaelli;D. Ielmini;F. Pellizzer

  • Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories

    D. Ielmini;A.L. Lacaita;D. Mantegazza

  • Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices.

    Wei Wang;Ming Wang;Elia Ambrosi;Alessandro Bricalli

  • Emerging neuromorphic devices.

    Daniele Ielmini;Stefano Ambrogio

  • Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories.

    D Ielmini;F Nardi;C Cagli

  • Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM

    U. Russo;D. Ielmini;C. Cagli;A.L. Lacaita

  • Phase Change Materials

    Simone Raoux;Daniele Ielmini;Matthias Wuttig;Ilya Karpov

Frequent Co-Authors

Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Alessandro S. Spinelli
Alessandro S. Spinelli Polytechnic University of Milan
Stefano Ambrogio
Stefano Ambrogio Meta for Business
Fabio Pellizzer
Fabio Pellizzer Micron (United States)
Rainer Waser
Rainer Waser RWTH Aachen University
Roberto Bez
Roberto Bez Micron (United States)
Ilia Valov
Ilia Valov RWTH Aachen University
Yuegang Zhang
Yuegang Zhang Tsinghua University
Shibing Long
Shibing Long University of Science and Technology of China
Gurtej S. Sandhu
Gurtej S. Sandhu Micron (United States)

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