World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
10384
World Ranking
4593
National Ranking
1621

Roberto Bez publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Roberto Bez sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 148 publications — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Roberto Bez D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Roberto Bez sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Roberto Bez is affiliated with Micron in the United States. Their research work spans several fields and subfields, with a focus on engineering and physics. Specifically, their main fields of study include Engineering and Physics and Astronomy. Within these, their subfields of study include Electrical and Electronic Engineering, Radiation, and Nuclear and High Energy Physics.

The topics that Roberto Bez has worked on include:

  • Radiation Detection and Scintillator Technologies
  • Particle Detector Development and Performance
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices

Roberto Bez has published research primarily in the venue Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. Their published paper includes:

  • Industrial exploitation of SiPM technology developed for basic research, 2020, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

The scientist has collaborated frequently with several co-authors, including:

  • Paolo Fantini
  • Agostino Pirovano
  • Paolo Organtini
  • A. Gola
  • G. Paternoster

Roberto Bez's research intersects integrated circuit technologies with applications in semiconductor failure analysis and detector technologies, highlighting contributions relevant to radiation detection and particle detector performance. Their work also touches on advanced concepts such as ferroelectric and negative capacitance devices, which are important in modern semiconductor materials and devices.

Best Publications

  • Introduction to flash memory

    R. Bez;E. Camerlenghi;A. Modelli;A. Visconti

  • Flash memory cells-an overview

    P. Pavan;R. Bez;P. Olivo;E. Zanoni

  • Electronic switching in phase-change memories

    A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer

  • Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

    F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti

  • Reliability study of phase-change nonvolatile memories

    A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli

  • Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

    A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev

  • Electronic switching effect and phase-change transition in chalcogenide materials

    A. Redaelli;A. Pirovano;F. Pellizzer;A.L. Lacaita

  • Electrothermal and phase-change dynamics in chalcogenide-based memories

    A.L. Lacaita;A. Redaelli;D. Ielmini;F. Pellizzer

  • Scaling analysis of phase-change memory technology

    A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer

  • Non-volatile memory technologies: emerging concepts and new materials

    Roberto Bez;Agostino Pirovano

  • 4-Mb MOSFET-selected phase-change memory experimental chip

    F. Bedeschi;R. Bez;C. Boffino;E. Bonizzoni

  • An 8Mb demonstrator for high-density 1.8V Phase-Change Memories

    F. Bedeschi;C. Resta;O. Khouri;E. Buda

  • Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof

    Giulio Casagrande;Roberto Bez;Fabio Pellizzer

  • A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

    F. Pellizzer;A. Benvenuti;B. Gleixner;Y. Kim

  • Magnetic memory cell with plural read transistors

    Kyusik Sin;Matthew R. Gibbons;William D. Jensen;Hugh Craig Hiner

  • Method and system for controlling MRAM write current to reduce power consumption

    Kyusik Sin;Hugh Craig Hiner;Xizeng (Stone) Shi;William D. Jensen

  • A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput

    G. De Sandre;L. Bettini;A. Pirola;L. Marmonier

  • 4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip

    F. Bedeschi;R. Bez;C. Boffino;E. Bonizzoni

  • Analysis of phase distribution in phase-change nonvolatile memories

    D. Ielmini;A.L. Lacaita;A. Pirovano;F. Pellizzer

  • Failure mechanisms of flash cell in program/erase cycling

    P. Cappelletti;R. Bez;D. Cantarelli;L. Fratin

Frequent Co-Authors

Fabio Pellizzer
Fabio Pellizzer Micron (United States)
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
David Esseni
David Esseni University of Udine
Bruno Ricco
Bruno Ricco University of Bologna
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia
Claudio Fiegna
Claudio Fiegna University of Bologna
Enrico Zanoni
Enrico Zanoni University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua

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