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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
10384
World Ranking
4593
National Ranking
1621

Overview

Roberto Bez is affiliated with Micron in the United States. Their research work spans several fields and subfields, with a focus on engineering and physics. Specifically, their main fields of study include Engineering and Physics and Astronomy. Within these, their subfields of study include Electrical and Electronic Engineering, Radiation, and Nuclear and High Energy Physics.

The topics that Roberto Bez has worked on include:

  • Radiation Detection and Scintillator Technologies
  • Particle Detector Development and Performance
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices

Roberto Bez has published research primarily in the venue Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. Their published paper includes:

  • Industrial exploitation of SiPM technology developed for basic research, 2020, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

The scientist has collaborated frequently with several co-authors, including:

  • Paolo Fantini
  • Agostino Pirovano
  • Paolo Organtini
  • A. Gola
  • G. Paternoster

Roberto Bez's research intersects integrated circuit technologies with applications in semiconductor failure analysis and detector technologies, highlighting contributions relevant to radiation detection and particle detector performance. Their work also touches on advanced concepts such as ferroelectric and negative capacitance devices, which are important in modern semiconductor materials and devices.

Best Publications

  • Introduction to flash memory

    R. Bez;E. Camerlenghi;A. Modelli;A. Visconti

  • Flash memory cells-an overview

    P. Pavan;R. Bez;P. Olivo;E. Zanoni

  • Electronic switching in phase-change memories

    A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer

  • Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

    F. Pellizzer;A. Pirovano;F. Ottogalli;M. Magistretti

  • Reliability study of phase-change nonvolatile memories

    A. Pirovano;A. Redaelli;F. Pellizzer;F. Ottogalli

  • Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

    A. Pirovano;A.L. Lacaita;F. Pellizzer;S.A. Kostylev

  • Electronic switching effect and phase-change transition in chalcogenide materials

    A. Redaelli;A. Pirovano;F. Pellizzer;A.L. Lacaita

  • Electrothermal and phase-change dynamics in chalcogenide-based memories

    A.L. Lacaita;A. Redaelli;D. Ielmini;F. Pellizzer

  • Scaling analysis of phase-change memory technology

    A. Pirovano;A.L. Lacaita;A. Benvenuti;F. Pellizzer

  • Non-volatile memory technologies: emerging concepts and new materials

    Roberto Bez;Agostino Pirovano

  • 4-Mb MOSFET-selected phase-change memory experimental chip

    F. Bedeschi;R. Bez;C. Boffino;E. Bonizzoni

  • An 8Mb demonstrator for high-density 1.8V Phase-Change Memories

    F. Bedeschi;C. Resta;O. Khouri;E. Buda

  • Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof

    Giulio Casagrande;Roberto Bez;Fabio Pellizzer

  • A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

    F. Pellizzer;A. Benvenuti;B. Gleixner;Y. Kim

  • Magnetic memory cell with plural read transistors

    Kyusik Sin;Matthew R. Gibbons;William D. Jensen;Hugh Craig Hiner

  • Method and system for controlling MRAM write current to reduce power consumption

    Kyusik Sin;Hugh Craig Hiner;Xizeng (Stone) Shi;William D. Jensen

  • A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput

    G. De Sandre;L. Bettini;A. Pirola;L. Marmonier

  • 4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip

    F. Bedeschi;R. Bez;C. Boffino;E. Bonizzoni

  • Analysis of phase distribution in phase-change nonvolatile memories

    D. Ielmini;A.L. Lacaita;A. Pirovano;F. Pellizzer

  • Failure mechanisms of flash cell in program/erase cycling

    P. Cappelletti;R. Bez;D. Cantarelli;L. Fratin

Frequent Co-Authors

Fabio Pellizzer
Fabio Pellizzer Micron (United States)
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
David Esseni
David Esseni University of Udine
Bruno Ricco
Bruno Ricco University of Bologna
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia
Claudio Fiegna
Claudio Fiegna University of Bologna
Enrico Zanoni
Enrico Zanoni University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua

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