2015 - IEEE Fellow For research on carrier transport and reliability of semiconductor devices
Luca Selmi mainly focuses on MOSFET, Electronic engineering, Optoelectronics, Silicon and Transistor. His study in MOSFET is interdisciplinary in nature, drawing from both Computational physics, Scattering, Condensed matter physics, Computer simulation and Silicon on insulator. His Electronic engineering research includes elements of PLL multibit and Integrated circuit.
His work on Optoelectronics is being expanded to include thematically relevant topics such as Hot-carrier injection. His Silicon study combines topics in areas such as Nanotechnology and Semiconductor. His research on Transistor often connects related areas such as Electron mobility.
The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, MOSFET, Silicon and Transistor. His Optoelectronics research incorporates elements of Substrate and Electrical engineering, Voltage. He works mostly in the field of Electronic engineering, limiting it down to concerns involving Computational physics and, occasionally, Quantum.
His work deals with themes such as Electron mobility, Condensed matter physics, Scattering, Ballistic conduction and Silicon on insulator, which intersect with MOSFET. He combines subjects such as Surface roughness and Phonon with his study of Scattering. His research in Silicon intersects with topics in Luminescence, Analytical chemistry and Electron.
Luca Selmi mainly focuses on Optoelectronics, CMOS, Electronic engineering, Transistor and Avalanche photodiode. Luca Selmi specializes in Optoelectronics, namely Nanowire. His CMOS study contributes to a more complete understanding of Electrical engineering.
In his study, Digital electronics is inextricably linked to Node, which falls within the broad field of Electronic engineering. Luca Selmi works mostly in the field of Semiconductor device modeling, limiting it down to topics relating to Thin film and, in certain cases, Surface roughness, Silicon and Scattering. The Analytical chemistry study combines topics in areas such as Surface charge and MOSFET.
His primary areas of investigation include Optoelectronics, CMOS, Electronic engineering, Transistor and Logic gate. Luca Selmi mostly deals with Nanowire in his studies of Optoelectronics. Luca Selmi has researched Electronic engineering in several fields, including Admittance, Electronic circuit, Node and Dielectric.
His studies deal with areas such as Very-large-scale integration and Static random-access memory as well as Transistor. The concepts of his Logic gate study are interwoven with issues in Threshold voltage, Metal gate and Silicon. His Matrix research integrates issues from Condensed matter physics and MOSFET.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Nanoscale MOS Transistors: Semi-Classical Transport and Applications
David Esseni;Pierpaolo Palestri;Luca Selmi.
(2011)
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp.
IEEE Electron Device Letters (2013)
Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs
D. Esseni;A. Abramo;L. Selmi;E. Sangiorgi.
IEEE Transactions on Electron Devices (2003)
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
P. Palestri;D. Esseni;S. Eminente;C. Fiegna.
IEEE Transactions on Electron Devices (2005)
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna.
IEEE Transactions on Electron Devices (2001)
Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs
L. Lucci;P. Palestri;D. Esseni;L. Bergagnini.
IEEE Transactions on Electron Devices (2007)
An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna.
IEEE Transactions on Electron Devices (2003)
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays
C. Laborde;Federico Pittino;H. A. Verhoeven;S. G. Lemay.
Nature Nanotechnology (2015)
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
F. Conzatti;M. G. Pala;D. Esseni;E. Bano.
IEEE Transactions on Electron Devices (2012)
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation
M. Lenzi;P. Palestri;E. Gnani;S. Reggiani.
IEEE Transactions on Electron Devices (2008)
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