World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
3823
World Ranking
6378
National Ranking
289

Elena Gnani publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Elena Gnani sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 245 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Elena Gnani D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Elena Gnani sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Elena Gnani is affiliated with the University of Bologna in Italy, focusing their research on various aspects of semiconductor materials and devices within engineering and materials science disciplines.

Their work spans several subfields including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, condensed matter physics, and atomic and molecular physics and optics. This diverse expertise supports a comprehensive approach to advancements in semiconductor technologies.

Key topics covered by their research include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • Silicon carbide semiconductor technologies
  • Thin-film transistor technologies
  • Ferroelectric and negative capacitance devices
  • Electrostatic discharge in electronics
  • GaN-based semiconductor devices and materials

Frequent publication venues for their work include:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • SSRN Electronic Journal
  • Journal of Applied Physics
  • Microelectronics Reliability

Their recent papers illustrate specific research focus and developments in semiconductor device physics and modeling:

  • Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, 2021, IEEE Transactions on Electron Devices
  • Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, 2022, Solid-State Electronics
  • Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure, 2022, Journal of Applied Physics
  • Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, 2024, IEEE Transactions on Electron Devices
  • Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications, 2025, Microelectronics Reliability

Elena Gnani collaborates frequently with researchers including Susanna Reggiani, A. Gnudi, Luigi Balestra, Mattia Rossetti, and Riccardo Depetro, with a significant number of joint publications reflecting ongoing research partnerships.

Best Publications

  • Theory of the Junctionless Nanowire FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

    S.. Reggiani;E.. Gnani;A.. Gnudi;M.. Rudan

  • TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

    S. Reggiani;G. Barone;S. Poli;E. Gnani

  • Band-Structure Effects in Ultrascaled Silicon Nanowires

    E. Gnani;S. Reggiani;A. Gnudi;P. Parruccini

  • Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

    J. Fu;N. Singh;K.D. Buddharaju;S.H.G. Teo

  • Physical Model of the Junctionless UTB SOI-FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs

    Alex Marchi;Elena Gnani;Susanna Reggiani;Massimo Rudan

  • Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

    Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani

  • Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

    S. Poli;S. Reggiani;A. Gnudi;E. Gnani

  • Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

    Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani

  • Optimization of n- and p-type TFETs Integrated on the Same ${ m InAs}/{ m Al}_{x}{ m Ga}_{1-x}{ m Sb}$ Technology Platform

    Emanuele Baravelli;Elena Gnani;Roberto Grassi;Antonio Gnudi

  • Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Band-structure calculations of SiO/sub 2/ by means of Hartree-Fock and density-functional techniques

    E. Gnani;S. Reggiani;R. Colle;M. Rudan

  • Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

    R. Grassi;S. Poli;E. Gnani;A. Gnudi

  • Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

    S. Reggiani;E. Gnani;M. Rudan;G. Baccarani

  • Design Considerations and Comparative Investigation of Ultra-Thin SOI, Double-Gate and Cylindrical Nanowire FETs

    E. Gnani;S. Reggiani;M. Rudan;G. Baccarani

  • Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

Frequent Co-Authors

Susanna Reggiani
Susanna Reggiani University of Bologna
Giorgio Baccarani
Giorgio Baccarani University of Bologna
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Navab Singh
Navab Singh Agency for Science, Technology and Research
David Esseni
David Esseni University of Udine
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Alessandro Paccagnella
Alessandro Paccagnella University of Padua

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