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Electronics and Electrical Engineering

D-Index
32
Citations
3823
World Ranking
6379
National Ranking
289

Overview

Elena Gnani is affiliated with the University of Bologna in Italy, focusing their research on various aspects of semiconductor materials and devices within engineering and materials science disciplines.

Their work spans several subfields including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, condensed matter physics, and atomic and molecular physics and optics. This diverse expertise supports a comprehensive approach to advancements in semiconductor technologies.

Key topics covered by their research include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • Silicon carbide semiconductor technologies
  • Thin-film transistor technologies
  • Ferroelectric and negative capacitance devices
  • Electrostatic discharge in electronics
  • GaN-based semiconductor devices and materials

Frequent publication venues for their work include:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • SSRN Electronic Journal
  • Journal of Applied Physics
  • Microelectronics Reliability

Their recent papers illustrate specific research focus and developments in semiconductor device physics and modeling:

  • Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, 2021, IEEE Transactions on Electron Devices
  • Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, 2022, Solid-State Electronics
  • Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure, 2022, Journal of Applied Physics
  • Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, 2024, IEEE Transactions on Electron Devices
  • Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications, 2025, Microelectronics Reliability

Elena Gnani collaborates frequently with researchers including Susanna Reggiani, A. Gnudi, Luigi Balestra, Mattia Rossetti, and Riccardo Depetro, with a significant number of joint publications reflecting ongoing research partnerships.

Best Publications

  • Theory of the Junctionless Nanowire FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

    S.. Reggiani;E.. Gnani;A.. Gnudi;M.. Rudan

  • TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

    S. Reggiani;G. Barone;S. Poli;E. Gnani

  • Band-Structure Effects in Ultrascaled Silicon Nanowires

    E. Gnani;S. Reggiani;A. Gnudi;P. Parruccini

  • Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

    J. Fu;N. Singh;K.D. Buddharaju;S.H.G. Teo

  • Physical Model of the Junctionless UTB SOI-FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs

    Alex Marchi;Elena Gnani;Susanna Reggiani;Massimo Rudan

  • Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

    Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani

  • Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

    S. Poli;S. Reggiani;A. Gnudi;E. Gnani

  • Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

    Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani

  • Optimization of n- and p-type TFETs Integrated on the Same ${ m InAs}/{ m Al}_{x}{ m Ga}_{1-x}{ m Sb}$ Technology Platform

    Emanuele Baravelli;Elena Gnani;Roberto Grassi;Antonio Gnudi

  • Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Band-structure calculations of SiO/sub 2/ by means of Hartree-Fock and density-functional techniques

    E. Gnani;S. Reggiani;R. Colle;M. Rudan

  • Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

    R. Grassi;S. Poli;E. Gnani;A. Gnudi

  • Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

    S. Reggiani;E. Gnani;M. Rudan;G. Baccarani

  • Design Considerations and Comparative Investigation of Ultra-Thin SOI, Double-Gate and Cylindrical Nanowire FETs

    E. Gnani;S. Reggiani;M. Rudan;G. Baccarani

  • Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

Frequent Co-Authors

Susanna Reggiani
Susanna Reggiani University of Bologna
Giorgio Baccarani
Giorgio Baccarani University of Bologna
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Navab Singh
Navab Singh Agency for Science, Technology and Research
David Esseni
David Esseni University of Udine
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Alessandro Paccagnella
Alessandro Paccagnella University of Padua

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