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Elena Gnani

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 32 6378 6122 289 284 245 3823

Elena Gnani publications per year

The chart shows the history of publications by Elena Gnani between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Elena Gnani published across 26 years, from 2000 to 2025, averaging 10 papers a year. Output peaked at 26 publications in 2015. 11 of the 259 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2015. 2000: 2 publications 2001: 2 publications 2002: 4 publications 2003: 2 publications 2004: 7 publications 2005: 14 publications 2006: 13 publications 2007: 13 publications 2008: 18 publications 2009: 11 publications 2010: 17 publications 2011: 16 publications 2012: 10 publications 2013: 18 publications 2014: 19 publications 2015: 26 publications 2016: 14 publications 2017: 6 publications 2018: 7 publications 2019: 4 publications 2020: 5 publications 2021: 8 publications 2022: 7 publications 2023: 5 publications 2024: 4 publications 2025: 7 publications
2000 2025

259 publications in total across all disciplines

View publications per year as a table
Elena Gnani: publications per year, 2000 to 2025
Year Publications
2000 2
2001 2
2002 4
2003 2
2004 7
2005 14
2006 13
2007 13
2008 18
2009 11
2010 17
2011 16
2012 10
2013 18
2014 19
2015 26
2016 14
2017 6
2018 7
2019 4
2020 5
2021 8
2022 7
2023 5
2024 4
2025 7
Total 259
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Elena Gnani publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Elena Gnani sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 245 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 245
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Elena Gnani D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Elena Gnani sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 32 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263 32
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Elena Gnani is affiliated with the University of Bologna in Italy, focusing their research on various aspects of semiconductor materials and devices within engineering and materials science disciplines.

Their work spans several subfields including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, condensed matter physics, and atomic and molecular physics and optics. This diverse expertise supports a comprehensive approach to advancements in semiconductor technologies.

Key topics covered by their research include:

  • Semiconductor materials and devices
  • Advancements in semiconductor devices and circuit design
  • Silicon carbide semiconductor technologies
  • Thin-film transistor technologies
  • Ferroelectric and negative capacitance devices
  • Electrostatic discharge in electronics
  • GaN-based semiconductor devices and materials

Frequent publication venues for their work include:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • SSRN Electronic Journal
  • Journal of Applied Physics
  • Microelectronics Reliability

Their recent papers illustrate specific research focus and developments in semiconductor device physics and modeling:

  • Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, 2021, IEEE Transactions on Electron Devices
  • Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, 2022, Solid-State Electronics
  • Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure, 2022, Journal of Applied Physics
  • Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, 2024, IEEE Transactions on Electron Devices
  • Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications, 2025, Microelectronics Reliability

Elena Gnani collaborates frequently with researchers including Susanna Reggiani, A. Gnudi, Luigi Balestra, Mattia Rossetti, and Riccardo Depetro, with a significant number of joint publications reflecting ongoing research partnerships.

Best Publications

  • Theory of the Junctionless Nanowire FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

    S.. Reggiani;E.. Gnani;A.. Gnudi;M.. Rudan

  • TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

    S. Reggiani;G. Barone;S. Poli;E. Gnani

  • Band-Structure Effects in Ultrascaled Silicon Nanowires

    E. Gnani;S. Reggiani;A. Gnudi;P. Parruccini

  • Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

    J. Fu;N. Singh;K.D. Buddharaju;S.H.G. Teo

  • Physical Model of the Junctionless UTB SOI-FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs

    Alex Marchi;Elena Gnani;Susanna Reggiani;Massimo Rudan

  • Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

    Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani

  • Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

    S. Poli;S. Reggiani;A. Gnudi;E. Gnani

  • Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

    Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani

  • Optimization of n- and p-type TFETs Integrated on the Same ${ m InAs}/{ m Al}_{x}{ m Ga}_{1-x}{ m Sb}$ Technology Platform

    Emanuele Baravelli;Elena Gnani;Roberto Grassi;Antonio Gnudi

  • Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Band-structure calculations of SiO/sub 2/ by means of Hartree-Fock and density-functional techniques

    E. Gnani;S. Reggiani;R. Colle;M. Rudan

  • Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

    R. Grassi;S. Poli;E. Gnani;A. Gnudi

  • Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

    S. Reggiani;E. Gnani;M. Rudan;G. Baccarani

  • Design Considerations and Comparative Investigation of Ultra-Thin SOI, Double-Gate and Cylindrical Nanowire FETs

    E. Gnani;S. Reggiani;M. Rudan;G. Baccarani

  • Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

Frequent Co-Authors

Susanna Reggiani
Susanna Reggiani University of Bologna
Giorgio Baccarani
Giorgio Baccarani University of Bologna
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Navab Singh
Navab Singh Agency for Science, Technology and Research
David Esseni
David Esseni University of Udine
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Wolfgang Fichtner
Wolfgang Fichtner ETH Zurich
Nadine Collaert
Nadine Collaert Imec

External Links

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Additionally, many universities offer degree programs for working adults tailored to accommodate busy schedules, making it easier for professionals in electronics and electrical engineering to gain further qualifications without interrupting their careers.

Best Scientists Citing Elena Gnani

David Esseni

David Esseni

University of Udine

Publications: 37

Pierpaolo Palestri

Pierpaolo Palestri

University of Udine

Publications: 36

Francisco Gamiz

Francisco Gamiz

University of Granada

Publications: 28

Luca Selmi

Luca Selmi

University of Modena and Reggio Emilia

Publications: 28

Benjamin Iniguez

Benjamin Iniguez

Rovira i Virgili University

Publications: 24

Dim-Lee Kwong

Dim-Lee Kwong

National University of Singapore

Publications: 18

Navab Singh

Navab Singh

Agency for Science, Technology and Research

Publications: 17

Adrian M. Ionescu

Adrian M. Ionescu

École Polytechnique Fédérale de Lausanne

Publications: 16

Jong-Ho Lee

Jong-Ho Lee

Soongsil University

Publications: 15

Giuseppe Iannaccone

Giuseppe Iannaccone

University of Pisa

Publications: 14

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 14

Mridula Gupta

Mridula Gupta

University of Delhi

Publications: 14

Gerhard Klimeck

Gerhard Klimeck

Purdue University West Lafayette

Publications: 13

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 13

Mansun Chan

Mansun Chan

Hong Kong University of Science and Technology

Publications: 13

Susanna Reggiani

Susanna Reggiani

University of Bologna

Publications: 13

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