World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
73
Citations
22235
World Ranking
750
National Ranking
330

Materials Science

D-Index
73
Citations
22071
World Ranking
3796
National Ranking
1042

Physics

D-Index
76
Citations
23703
World Ranking
3305
National Ranking
1565

Research.com Recognitions

  • 2020 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2011 - Fellow of American Physical Society (APS) Citation For the development, application, and dissemination of atomistic, quantum simulation tools for nanoelectronic devices
  • 2011 - ACM Gordon Bell Prize For Atomistic nanoelectronics device engineering with sustained performance up to 1.44 Pflops

Overview

Gerhard Klimeck is affiliated with Purdue University West Lafayette in the United States. Their research spans multiple interconnected fields primarily focused on computer science and engineering, with particular attention to electrical and electronic engineering, computer networks and communications, information systems and management, and artificial intelligence.

Their work extensively covers topics including scientific computing and data management, advancements in semiconductor devices and circuit design, semiconductor materials and devices, distributed and parallel computing systems, research data management practices, advanced data storage technologies, and silicon carbide semiconductor technologies.

Notable recent publications authored or coauthored by associated researchers include:

  • Research in computing-intensive simulations for nature-oriented civil-engineering and related scientific fields, using machine learning and big data: an overview of open problems (2023, Journal Of Big Data)
  • Teaching computing for complex problems in civil engineering and geosciences using big data and machine learning: synergizing four different computing paradigms and four different management domains (2023, Journal Of Big Data)
  • Impact of Body Thickness and Scattering on III-V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation (2020, IEEE Transactions on Electron Devices)
  • Doping profile engineered triple heterojunction TFETs with 12 nm body thickness (2020, arXiv (Cornell University))
  • Open Science via HUBzero: Exploring Five Science Gateways Supporting and Growing their Open Science Communities (2022, Proceedings of the... Annual Hawaii International Conference on System Sciences/Proceedings of the Annual Hawaii International Conference on System Sciences)

Frequent collaborators in Klimeck's research include Michael Zentner, Alejandro Strachan, Hesameddin Ilatikhameneh, Michael Povolotskyi, and Lynn Zentner. These coauthors have contributed to various joint research efforts, reflecting a collaborative approach in their scientific endeavors.

Their publications are commonly found in venues such as arXiv (Cornell University), Journal Of Big Data, IEEE Transactions on Electron Devices, Zenodo (CERN European Organization for Nuclear Research), and proceedings from the Annual Hawaii International Conference on System Sciences.

Throughout their career, Gerhard Klimeck has received several awards, including:

  • Fellow of the American Association for the Advancement of Science (AAAS) in 2020
  • Fellow of American Physical Society (APS) in 2011, recognized for the development, application, and dissemination of atomistic, quantum simulation tools for nanoelectronic devices
  • ACM Gordon Bell Prize in 2011, awarded for atomistic nanoelectronics device engineering with sustained performance up to 1.44 Pflops

Best Publications

  • Silicon quantum electronics

    Floris Arnoud Zwanenburg;Andrew S. Dzurak;Andrea Morello;Michelle Y. Simmons

  • A single-atom transistor

    Martin Fuechsle;Jill A. Miwa;Suddhasatta Mahapatra;Hoon Ryu

  • Single and multiband modeling of quantum electron transport through layered semiconductor devices

    Roger Lake;Gerhard Klimeck;R. Chris Bowen;Dejan Jovanovic

  • Valence band effective-mass expressions in the sp 3 d 5 s * empirical tight-binding model applied to a Si and Ge parametrization

    Timothy B. Boykin;Gerhard Klimeck;Fabiano Oyafuso

  • Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations

    Mathieu Luisier;Andreas Schenk;Wolfgang Fichtner;Gerhard Klimeck

  • Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

    G P Lansbergen;R Rahman;C J Wellard;I Woo

  • Ohm's Law Survives to the Atomic Scale

    Bent Weber;Suddhasatta Mahapatra;Hoon Ryu;Sunhee Lee

  • Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

    C. H. Yang;A. Rossi;R. Ruskov;N. S. Lai

  • Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

    Timothy B. Boykin;Gerhard Klimeck;R. Chris Bowen;Fabiano Oyafuso

  • nanoHUB.org: Advancing Education and Research in Nanotechnology

    G. Klimeck;M. McLennan;S.P. Brophy;G.B. Adams

  • Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

    G. Klimeck;S.S. Ahmed;Hansang Bae;N. Kharche

  • Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

    Seungwon Lee;Fabiano Oyafuso;Paul von Allmen;Gerhard Klimeck

  • Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

    Mathieu Luisier;Gerhard Klimeck

  • Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation

    Dragica Vasileska;Stephen M. Goodnick;Gerhard Klimeck

  • Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

    Gerhard Klimeck;Fabiano Oyafuso;Timothy B. Boykin;R. Chris Bowen

  • On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors

    Jing Wang;A. Rahman;A. Ghosh;G. Klimeck

  • Electronic properties of silicon nanowires

    Yun Zheng;C. Rivas;R. Lake;K. Alam

  • Valley splitting in strained silicon quantum wells

    Timothy B. Boykin;Gerhard Klimeck;M. A. Eriksson;Mark Friesen

  • Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

    Hesameddin Ilatikhameneh;Yaohua Tan;Bozidar Novakovic;Gerhard Klimeck

  • Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

    Hesameddin Ilatikhameneh;Yaohua Tan;Bozidar Novakovic;Gerhard Klimeck

  • Bandstructure Effects in Silicon Nanowire Electron Transport

    N. Neophytou;A. Paul;M.S. Lundstrom;G. Klimeck

Frequent Co-Authors

Dragica Vasileska
Dragica Vasileska Arizona State University
Roger K. Lake
Roger K. Lake University of California, Riverside
Lloyd C. L. Hollenberg
Lloyd C. L. Hollenberg University of Melbourne
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
David S. Ebert
David S. Ebert University of Oklahoma
Alan Seabaugh
Alan Seabaugh University of Notre Dame

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