World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
36
Citations
5813
World Ranking
8667
National Ranking
92

Gengchiau Liang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Gengchiau Liang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 247 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Gengchiau Liang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Gengchiau Liang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 36 D-Index — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Gengchiau Liang is affiliated with National Yang Ming Chiao Tung University in Taiwan. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a focus on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Materials Chemistry.

The main topics covered in Liang's research include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Magnetic properties of thin films
  • Topological Materials and Phenomena
  • Semiconductor materials and devices
  • Graphene research and applications
  • Magnetic and transport properties of perovskites and related materials

Frequent co-authors in Liang's work are:

  • Sheng Luo
  • Xiao Gong
  • Chuang-Han Hsu
  • Hsin Lin
  • Yuye Kang

Liang's recent notable papers include:

  • "Ultrafast and energy-efficient spin-orbit torque switching in compensated ferrimagnets" (2020) published in Nature Electronics
  • "High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection" (2020) published in Nature Nanotechnology
  • "Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS" (2021) published in Nano Letters
  • "Observation of the Out-of-Plane Polarized Spin Current from CVD Grown WTe 2" (2021) published in Advanced Quantum Technologies
  • "Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width" (2021) published in Nano Letters

The venues where Liang frequently publishes research include:

  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • Nature Nanotechnology
  • Nano Letters
  • IEEE Electron Device Letters

Best Publications

  • Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

    Gengchiau Liang;N. Neophytou;D.E. Nikonov;M.S. Lundstrom

  • All-electric magnetization switching and Dzyaloshinskii-Moriya interaction in WTe 2 /ferromagnet heterostructures.

    Shuyuan Shi;Shiheng Liang;Zhifeng Zhu;Kaiming Cai

  • Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers

    Wen Huang;Haixia Da;Gengchiau Liang

  • Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2.

    Wen Huang;Xin Luo;Xin Luo;Chee Kwan Gan;Su Ying Quek;Su Ying Quek

  • Silicon-based Molecular Electronics

    Titash Rakshit;Geng-Chiau Liang;and Avik W. Ghosh;Supriyo Datta

  • Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets

    Kaiming Cai;Zhifeng Zhu;Jong Min Lee;Rahul Mishra

  • Graphene-based spin caloritronics.

    Minggang Zeng;Yuanping Feng;Gengchiau Liang

  • Performance analysis of a Ge/Si core/shell nanowire field-effect transistor.

    Gengchiau Liang;Jie Xiang;Neerav Kharche;Gerhard Klimeck

  • High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection.

    Steven Lukman;Lu Ding;Lei Xu;Ye Tao

  • Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed

    Yongjie Hu;Jie Xiang;Gengchiau Liang;Hao Yan

  • Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons

    Xiaoxi Ni;Gengchiau Liang;Jian-Sheng Wang;Baowen Li

  • Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

    Gengchiau Liang;Neophytos Neophytou;Mark S. Lundstrom;Dmitri E. Nikonov

  • Electrostatic potential profiles of molecular conductors

    GC Liang;Avik Ghosh;Magnus Paulsson;Supriyo Datta

  • Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4

    Dushyant Kumar;Chuang Han Hsu;Raghav Sharma;Tay Rong Chang

  • Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency.

    Meng-Lin Tsai;Meng-Lin Tsai;Ming-Yang Li;José Ramón Durán Retamal;Kai-Tak Lam

  • Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS.

    Xiu Fang Lu;Yishu Zhang;Naizhou Wang;Sheng Luo

  • Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

    Yuan Dong;Wei Wang;Dian Lei;Xiao Gong

  • Contact effects in graphene nanoribbon transistors.

    Gengchiau Liang;Neophytos Neophytou;Mark S. Lundstrom;Dmitri E. Nikonov

  • A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

    Kai-Tak Lam;Dawei Seah;Sai-Kong Chin;S Bala Kumar

  • Theoretical study on thermoelectric properties of kinked graphene nanoribbons

    Wen Huang;Jian-Sheng Wang;Gengchiau Liang

  • Spin-dependent thermoelectric effects in graphene-based spin valves

    Minggang Zeng;Wen Huang;Gengchiau Liang

  • Author Correction: High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

    Steven Lukman;Lu Ding;Lei Xu;Ye Tao

Frequent Co-Authors

Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Xiao Gong
Xiao Gong National University of Singapore
Hsin Lin
Hsin Lin Academia Sinica
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Dmitri E. Nikonov
Dmitri E. Nikonov Intel (United States)
Aaron Thean
Aaron Thean National University of Singapore
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Arun Bansil
Arun Bansil Northeastern University
Yuan Ping Feng
Yuan Ping Feng National University of Singapore

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