World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
10968
World Ranking
2196
National Ranking
856

Dmitri E. Nikonov publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dmitri E. Nikonov sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 222 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dmitri E. Nikonov D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dmitri E. Nikonov sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 55 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Dmitri E. Nikonov is affiliated with Intel in the United States and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research is primarily focused on electronic, optical, and magnetic materials, with significant work in materials chemistry and electrical and electronic engineering. They have also contributed to atomic and molecular physics, optics, and artificial intelligence, reflecting a diverse interdisciplinary approach.

The main topics covered in their work include multiferroics and related materials, magnetic properties of thin films, ferroelectric and piezoelectric materials, as well as ferroelectric and negative capacitance devices. Their research also addresses magnetic and transport properties of perovskites and related materials, electronic and structural properties of oxides, and advanced memory and neural computing.

Frequent co-authors collaborating with Nikonov are Ian A. Young, Hai Li, R. Ramesh, Chia-Ching Lin, and Tanay A. Gosavi.

Publication venues where Nikonov has a notable presence include arXiv (Cornell University), Nature Communications, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Nano Letters, and IEEE Transactions on Electron Devices.

Noteworthy recent papers authored or co-authored by Nikonov include:

  • The 2021 Magnonics Roadmap, 2021, Journal of Physics Condensed Matter
  • Enabling ultra-low-voltage switching in BaTiO3, 2022, Nature Materials
  • Nanoscale domain wall devices with magnetic tunnel junction read and write, 2021, Nature Electronics
  • The 2024 magnonics roadmap, 2024, Journal of Physics Condensed Matter
  • Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures, 2020, Nano Letters

Best Publications

  • Scalable energy-efficient magnetoelectric spin-orbit logic.

    Sasikanth Manipatruni;Dmitri E. Nikonov;Chia Ching Lin;Tanay A. Gosavi

  • Experimental demonstration of laser oscillation without population inversion via quantum interference in Rb

    A S. Zibrov;M D. Lukin;M D. Lukin;M D. Lukin;D E. Nikonov;D E. Nikonov;D E. Nikonov;Leo W. Hollberg

  • Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking

    Dmitri E. Nikonov;Ian A. Young

  • Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

    S.O. Koswatta;M.S. Lundstrom;D.E. Nikonov

  • Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure.

    Jt T. Heron;M. Trassin;K. Ashraf;M. Gajek

  • The 2021 Magnonics Roadmap.

    Anjan Barman;Gianluca Gubbiotti;S. Ladak;A. O. Adeyeye

  • Analysis of graphene nanoribbons as a channel material for field-effect transistors

    B. Obradovic;R. Kotlyar;F. Heinz;P. Matagne

  • Beyond CMOS computing with spin and polarization

    Sasikanth Manipatruni;Dmitri E. Nikonov;Ian A. Young

  • Modeling of Nanoscale Devices

    M.P. Anantram;M.S. Lundstrom;D.E. Nikonov

  • Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

    Dmitri E. Nikonov;Ian A. Young

  • Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

    Gengchiau Liang;N. Neophytou;D.E. Nikonov;M.S. Lundstrom

  • Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

    S.O. Koswatta;S. Hasan;M.S. Lundstrom;M.P. Anantram

  • Proposal of a Spin Torque Majority Gate Logic

    D. E. Nikonov;G. I. Bourianoff;T. Ghani

  • Fano interference of collective excitations in semiconductor quantum wells and lasing without inversion

    Dmitri E. Nikonov;Ataç Imamoğlu;Marlan O. Scully

  • Coupled-Oscillator Associative Memory Array Operation for Pattern Recognition

    Dmitri E. Nikonov;Gyorgy Csaba;Wolfgang Porod;Tadashi Shibata

  • Quantum phenomena in nonstationary media

    V. V. Dodonov;A. B. Klimov;D. E. Nikonov;D. E. Nikonov

  • Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

    Gengchiau Liang;Neophytos Neophytou;Mark S. Lundstrom;Dmitri E. Nikonov

  • Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors

    Siyuranga O. Koswatta;Sayed Hasan;Mark S. Lundstrom;M. P. Anantram

  • MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

    O. Golonzka;J. G. Alzate;U. Arslan;M. Bohr

  • Quantum phenomena in resonators with moving walls

    V. V. Dodonov;A. B. Klimov;D. E. Nikonov

  • A Three-Terminal Dual-Pillar STT-MRAM for High-Performance Robust Memory Applications

    N N Mojumder;S K Gupta;S H Choday;D E Nikonov

  • Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic

    Sasikanth Manipatruni;Dmitri E. Nikonov;Ian A. Young

  • Computational study of carbon nanotube p-i-n tunnel FETs

    S.O. Koswatta;D.E. Nikonov;M.S. Lundstrom

Frequent Co-Authors

Ian A. Young
Ian A. Young Intel (United States)
Sasikanth Manipatruni
Sasikanth Manipatruni Intel (United States)
Marlan O. Scully
Marlan O. Scully Texas A&M University
Azad Naeemi
Azad Naeemi Georgia Institute of Technology
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Tahir Ghani
Tahir Ghani Intel (United States)
Iuliana Radu
Iuliana Radu Taiwan Semiconductor Manufacturing Company (Taiwan)
V. V. Dodonov
V. V. Dodonov University of Brasília
Peter A. Dowben
Peter A. Dowben University of Nebraska–Lincoln

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