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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
10968
World Ranking
2196
National Ranking
855

Overview

Dmitri E. Nikonov is affiliated with Intel in the United States and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research is primarily focused on electronic, optical, and magnetic materials, with significant work in materials chemistry and electrical and electronic engineering. They have also contributed to atomic and molecular physics, optics, and artificial intelligence, reflecting a diverse interdisciplinary approach.

The main topics covered in their work include multiferroics and related materials, magnetic properties of thin films, ferroelectric and piezoelectric materials, as well as ferroelectric and negative capacitance devices. Their research also addresses magnetic and transport properties of perovskites and related materials, electronic and structural properties of oxides, and advanced memory and neural computing.

Frequent co-authors collaborating with Nikonov are Ian A. Young, Hai Li, R. Ramesh, Chia-Ching Lin, and Tanay A. Gosavi.

Publication venues where Nikonov has a notable presence include arXiv (Cornell University), Nature Communications, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Nano Letters, and IEEE Transactions on Electron Devices.

Noteworthy recent papers authored or co-authored by Nikonov include:

  • The 2021 Magnonics Roadmap, 2021, Journal of Physics Condensed Matter
  • Enabling ultra-low-voltage switching in BaTiO3, 2022, Nature Materials
  • Nanoscale domain wall devices with magnetic tunnel junction read and write, 2021, Nature Electronics
  • The 2024 magnonics roadmap, 2024, Journal of Physics Condensed Matter
  • Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures, 2020, Nano Letters

Best Publications

  • Scalable energy-efficient magnetoelectric spin-orbit logic.

    Sasikanth Manipatruni;Dmitri E. Nikonov;Chia Ching Lin;Tanay A. Gosavi

  • Experimental demonstration of laser oscillation without population inversion via quantum interference in Rb

    A S. Zibrov;M D. Lukin;M D. Lukin;M D. Lukin;D E. Nikonov;D E. Nikonov;D E. Nikonov;Leo W. Hollberg

  • Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking

    Dmitri E. Nikonov;Ian A. Young

  • Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

    S.O. Koswatta;M.S. Lundstrom;D.E. Nikonov

  • Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure.

    Jt T. Heron;M. Trassin;K. Ashraf;M. Gajek

  • The 2021 Magnonics Roadmap.

    Anjan Barman;Gianluca Gubbiotti;S. Ladak;A. O. Adeyeye

  • Analysis of graphene nanoribbons as a channel material for field-effect transistors

    B. Obradovic;R. Kotlyar;F. Heinz;P. Matagne

  • Beyond CMOS computing with spin and polarization

    Sasikanth Manipatruni;Dmitri E. Nikonov;Ian A. Young

  • Modeling of Nanoscale Devices

    M.P. Anantram;M.S. Lundstrom;D.E. Nikonov

  • Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

    Dmitri E. Nikonov;Ian A. Young

  • Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

    Gengchiau Liang;N. Neophytou;D.E. Nikonov;M.S. Lundstrom

  • Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

    S.O. Koswatta;S. Hasan;M.S. Lundstrom;M.P. Anantram

  • Proposal of a Spin Torque Majority Gate Logic

    D. E. Nikonov;G. I. Bourianoff;T. Ghani

  • Fano interference of collective excitations in semiconductor quantum wells and lasing without inversion

    Dmitri E. Nikonov;Ataç Imamoğlu;Marlan O. Scully

  • Coupled-Oscillator Associative Memory Array Operation for Pattern Recognition

    Dmitri E. Nikonov;Gyorgy Csaba;Wolfgang Porod;Tadashi Shibata

  • Quantum phenomena in nonstationary media

    V. V. Dodonov;A. B. Klimov;D. E. Nikonov;D. E. Nikonov

  • Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

    Gengchiau Liang;Neophytos Neophytou;Mark S. Lundstrom;Dmitri E. Nikonov

  • Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors

    Siyuranga O. Koswatta;Sayed Hasan;Mark S. Lundstrom;M. P. Anantram

  • MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

    O. Golonzka;J. G. Alzate;U. Arslan;M. Bohr

  • Quantum phenomena in resonators with moving walls

    V. V. Dodonov;A. B. Klimov;D. E. Nikonov

  • A Three-Terminal Dual-Pillar STT-MRAM for High-Performance Robust Memory Applications

    N N Mojumder;S K Gupta;S H Choday;D E Nikonov

  • Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic

    Sasikanth Manipatruni;Dmitri E. Nikonov;Ian A. Young

  • Computational study of carbon nanotube p-i-n tunnel FETs

    S.O. Koswatta;D.E. Nikonov;M.S. Lundstrom

Frequent Co-Authors

Ian A. Young
Ian A. Young Intel (United States)
Sasikanth Manipatruni
Sasikanth Manipatruni Intel (United States)
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Tahir Ghani
Tahir Ghani Intel (United States)
Tanay Karnik
Tanay Karnik Intel (United States)
Mario J. Paniccia
Mario J. Paniccia Anello Photonics
Lane W. Martin
Lane W. Martin Lawrence Berkeley National Laboratory
Peter A. Dowben
Peter A. Dowben University of Nebraska–Lincoln
Krishna C. Saraswat
Krishna C. Saraswat Stanford University

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