World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
48
Citations
8214
World Ranking
4614
National Ranking
38

Iuliana Radu publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Iuliana Radu sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 360 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Iuliana Radu D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Iuliana Radu sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Iuliana Radu is affiliated with Taiwan Semiconductor Manufacturing Company in Taiwan, focusing on research primarily within engineering and materials science. Their scholarly contributions encompass a broad spectrum of technical topics, with a significant emphasis on semiconductor materials and devices as well as 2D materials and their applications.

The scientist's work is categorized under several main and subfields of study:

  • Engineering
  • Materials Science

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Artificial Intelligence

Main topics covered in their research include:

  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Quantum and electron transport phenomena
  • MXene and MAX Phase Materials
  • Graphene research and applications

Key recent publications reflecting their research focus are:

  • How to report and benchmark emerging field-effect transistors, 2022, Nature Electronics
  • Reconfigurable submicrometer spin-wave majority gate with electrical transducers, 2020, Science Advances
  • Nanoscale domain wall devices with magnetic tunnel junction read and write, 2021, Nature Electronics
  • Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits, 2022, Advanced Materials
  • Impact of device scaling on the electrical properties of MoS2 field-effect transistors, 2021, Scientific Reports

The venues in which Iuliana Radu frequently publishes demonstrate a consistent presence in leading electronics and materials science outlets:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • 2022 International Electron Devices Meeting (IEDM)
  • ACS Nano
  • 2021 IEEE International Electron Devices Meeting (IEDM)

Collaborations are an integral part of their research process, with frequent coauthors including:

  • B. Govoreanu
  • Inge Asselberghs
  • H.-S. Philip Wong
  • Danny Wan
  • Julien Jussot

Best Publications

  • Terahertz spin current pulses controlled by magnetic heterostructures.

    Tobias Kampfrath;M. Battiato;P. Maldonado;G. Eilers

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Quasi-particle properties from tunneling in the v = 5/2 fractional quantum Hall state.

    Iuliana P. Radu;J. B. Miller;C. M. Marcus;M. A. Kastner

  • Electrical control of spin relaxation in a quantum dot

    S. Amasha;K. MacLean;Iuliana P. Radu;D. M. Zumbühl

  • High-Field High-Repetition-Rate Sources for the Coherent THz Control of Matter

    B. Green;S. Kovalev;V. Asgekar;G. Geloni

  • High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

    E. Xenogiannopoulou;P. Tsipas;K. E. Aretouli;D. Tsoutsou

  • Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

    Giovanni V. Resta;Yashwanth Balaji;Dennis Lin;Iuliana P. Radu

  • Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

    Gage Hills;Marie Garcia Bardon;Gerben Doornbos;Dmitry Yakimets

  • Laser-Induced Magnetization Dynamics of Lanthanide-Doped Permalloy Thin Films

    I. Radu;Georg Woltersdorf;M. Kiessling;A. Melnikov

  • Fractional quantum Hall effect in a quantum point contact at filling fraction 5/2

    Jeffrey B. Miller;Iuliana P. Radu;Dominik M. Zumbühl;Dominik M. Zumbühl;Eli M. Levenson-Falk

  • The conversion mechanism of amorphous silicon to stoichiometric WS2

    Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut

  • Antiferromagnetic-ferromagnetic phase transition in FeRh probed by x-ray magnetic circular dichroism

    C. Stamm;J.-U. Thiele;T. Kachel;I. Radu

  • Future Logic Scaling: Towards Atomic Channels and Deconstructed Chips

    S. B. Samavedam;J. Ryckaert;E. Beyne;K. Ronse

  • Reconfigurable submicrometer spin-wave majority gate with electrical transducers.

    Giacomo Talmelli;Thibaut Devolder;Nick Träger;Johannes Förster

  • Nanoscale domain wall devices with magnetic tunnel junction read and write

    E. Raymenants;E. Raymenants;O. Bultynck;O. Bultynck;D. Wan;T. Devolder

  • Energy-Dependent Tunneling in a Quantum Dot

    K. MacLean;S. Amasha;Iuliana P. Radu;D. M. Zumbühl;D. M. Zumbühl

  • Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

    Unknown

  • Polarity control in WSe2 double-gate transistors

    Giovanni V. Resta;Surajit Sutar;Surajit Sutar;Yashwanth Balaji;Dennis Lin

  • Laser-induced generation and quenching of magnetization on FeRh studied with time-resolved x-ray magnetic circular dichroism

    I. Radu;I. Radu;C. Stamm;N. Pontius;T. Kachel

  • Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

    B. Govoreanu;A. Redolfi;L. Zhang;C. Adelmann

  • Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

    Benjamin Groven;Markus Heyne;Ankit Nalin Mehta;Hugo Bender

  • Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

    A. Delabie;M. Caymax;B. Groven;M. Heyne

  • Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control

    Anthony P Peter;Koen Martens;Geert Rampelberg;Michael Toeller

  • 2D materials: roadmap to CMOS integration

    C. Huyghebaert;T. Schram;Q. Smets;T. Kumar Agarwal

  • Magnetic-field asymmetry of nonlinear transport in carbon nanotubes.

    Jiang Wei;Michael Shimogawa;Zenghui Wang;Iuliana Radu

  • All electrical propagating spin wave spectroscopy with broadband wavevector capability

    Florin Ciubotaru;Thibaut Devolder;Mauricio Manfrini;Christoph Adelmann

Frequent Co-Authors

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