Her work is dedicated to discovering how Reduction (mathematics), Geometry are connected with Scaling and other disciplines. Her work on Geometry expands to the thematically related Scaling. Her study on Chemical engineering is interrelated to topics such as Crystallinity and Nanocrystalline material. Her research is interdisciplinary, bridging the disciplines of Chemical engineering and Crystallinity. Her work blends Nanotechnology and Nanoscopic scale studies together. By researching both Nanoscopic scale and Semiconductor, Iuliana Radu produces research that crosses academic boundaries. Her multidisciplinary approach integrates Semiconductor and Chemical vapor deposition in her work. In her papers, Iuliana Radu integrates diverse fields, such as Chemical vapor deposition and Epitaxy. Her research on Optoelectronics often connects related topics like Wafer.
Her Quantum mechanics study frequently intersects with other fields, such as Electron and Magnetic field. Her work often combines Nanotechnology and Engineering physics studies. Iuliana Radu brings together Engineering physics and Nanotechnology to produce work in her papers. Iuliana Radu performs multidisciplinary study on Optoelectronics and Transistor in her works. She integrates Transistor with Optoelectronics in her research. Iuliana Radu integrates Electrical engineering and Electronic engineering in her research. She performs multidisciplinary study on Electronic engineering and Electrical engineering in her works. As part of her studies on Layer (electronics), she often connects relevant subjects like Composite material. Much of her study explores Composite material relationship to Layer (electronics).
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10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation
B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv.
international electron devices meeting (2011)
Terahertz spin current pulses controlled by magnetic heterostructures.
Tobias Kampfrath;M. Battiato;P. Maldonado;G. Eilers.
Nature Nanotechnology (2013)
Quasi-particle properties from tunneling in the v = 5/2 fractional quantum Hall state.
Iuliana P. Radu;J. B. Miller;C. M. Marcus;M. A. Kastner.
Electrical control of spin relaxation in a quantum dot
S. Amasha;K. MacLean;Iuliana P. Radu;D. M. Zumbühl.
Physical Review Letters (2008)
High-Field High-Repetition-Rate Sources for the Coherent THz Control of Matter
B. Green;S. Kovalev;V. Asgekar;G. Geloni.
Scientific Reports (2016)
High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.
E. Xenogiannopoulou;P. Tsipas;K. E. Aretouli;D. Tsoutsou.
Laser-Induced Magnetization Dynamics of Lanthanide-Doped Permalloy Thin Films
I. Radu;Georg Woltersdorf;M. Kiessling;A. Melnikov.
Physical Review Letters (2009)
Fractional quantum Hall effect in a quantum point contact at filling fraction 5/2
Jeffrey B. Miller;Iuliana P. Radu;Dominik M. Zumbühl;Dominik M. Zumbühl;Eli M. Levenson-Falk.
Nature Physics (2007)
The conversion mechanism of amorphous silicon to stoichiometric WS2
Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut.
Journal of Materials Chemistry C (2018)
Energy-Dependent Tunneling in a Quantum Dot
K. MacLean;S. Amasha;Iuliana P. Radu;D. M. Zumbühl;D. M. Zumbühl.
Physical Review Letters (2007)
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