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Cedric Huyghebaert

Cedric Huyghebaert

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6803
World Ranking
4491
National Ranking
132

Overview

Cedric Huyghebaert is a researcher affiliated with KU Leuven in Belgium. Their work primarily spans the fields of Materials Science and Engineering, with a focus on subfields including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Civil and Structural Engineering.

The main topics of their research include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Photonic and Optical Devices
  • Plasmonic and Surface Plasmon Research
  • Ferroelectric and Negative Capacitance Devices
  • Molecular Junctions and Nanostructures

Recent publications by Cedric Huyghebaert cover several aspects of two-dimensional materials and their applications. These include:

  • 2D materials for future heterogeneous electronics, 2022, Nature Communications
  • Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices, 2020, Nature Communications
  • Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics, 2021, ACS Nano
  • Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy, 2021, 2D Materials
  • Understanding ambipolar transport in MoS 2 field effect transistors: the substrate is the key, 2020, Nanotechnology

Throughout their career, Cedric Huyghebaert has published in several key journals with multiple contributions, including:

  • 2D Materials
  • Nature Communications
  • Journal of Micro/Nanopatterning Materials and Metrology
  • ECS Journal of Solid State Science and Technology
  • Japanese Journal of Applied Physics

Collaboration forms a significant part of Huyghebaert's work, with frequent co-authors including:

  • Steven Brems
  • Inge Asselberghs
  • Joris Van Campenhout
  • Marianna Pantouvaki
  • Dries Van Thourhout

Best Publications

  • Graphene and two-dimensional materials for silicon technology.

    Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna

  • Graphene-silicon phase modulators with gigahertz bandwidth

    V. Sorianello;M. Midrio;G. Contestabile;I. Asselberghs

  • Method for producing interconnecting structure for integrated circuit

    セドリク・フイフヘバエルト;Cedric Huyghebaert;ヤン・ファエス;Jan Vaes

  • Graphene-based integrated photonics for next-generation datacom and telecom

    Marco Romagnoli;Vito Sorianello;Michele Midrio;Frank H. L. Koppens;Frank H. L. Koppens

  • Broadband 10 Gb/s operation of graphene electro-absorption modulator on silicon

    Yingtao Hu;Marianna Pantouvaki;Joris Van Campenhout;Steven Brems

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • 3D stacked IC demonstration using a through Silicon Via First approach

    J. Van Olmen;A. Mercha;G. Katti;C. Huyghebaert

  • Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

    A. Vandooren;D. Leonelli;R. Rooyackers;A. Hikavyy

  • High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

    E. Xenogiannopoulou;P. Tsipas;K. E. Aretouli;D. Tsoutsou

  • Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices

    Mario Lanza;Quentin Smets;Cedric Huyghebaert;Lain-Jong Li;Lain-Jong Li

  • Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration

    J. Van Olmen;C. Huyghebaert;J. Coenen;J. Van Aelst

  • 2D materials: roadmap to CMOS integration

    C. Huyghebaert;T. Schram;Q. Smets;T. Kumar Agarwal

  • 3D stacked ICs using Cu TSVs and Die to Wafer Hybrid Collective bonding

    G. Katti;A. Mercha;J. Van Olmen;C. Huyghebaert

  • Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures

    Daniele Chiappe;Inge Asselberghs;Surajit Sutar;Serena Iacovo

  • Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

    Anne Vandooren;Daniele Leonelli;Rita Rooyackers;Kai Arstila

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • High Cycling Stability and Extreme Rate Performance in Nanoscaled LiMn2O4 Thin Films.

    Brecht Put;Philippe M. Vereecken;Nouha Labyedh;Alfonso Sepulveda

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

    Daniele Chiappe;Jonathan Ludwig;Alessandra Leonhardt;Salim El Kazzi

  • Toward tunable doping in graphene FETs by molecular self-assembled monolayers.

    Bing Li;Alexander V. Klekachev;Mirco Cantoro;Cedric Huyghebaert

  • A new complementary hetero-junction vertical Tunnel-FET integration scheme

    R. Rooyackers;A. Vandooren;A. S. Verhulst;A. Walke

  • Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

    M. Romagnoli;V. Sorianello;M. Midrio;F. H. L. Koppens;F. H. L. Koppens

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