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Cedric Huyghebaert

Cedric Huyghebaert

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6803
World Ranking
4491
National Ranking
131

Cedric Huyghebaert publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Cedric Huyghebaert sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 180 publications — 23rd percentile

23% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Cedric Huyghebaert D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Cedric Huyghebaert sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Cedric Huyghebaert is a researcher affiliated with KU Leuven in Belgium. Their work primarily spans the fields of Materials Science and Engineering, with a focus on subfields including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Civil and Structural Engineering.

The main topics of their research include:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Photonic and Optical Devices
  • Plasmonic and Surface Plasmon Research
  • Ferroelectric and Negative Capacitance Devices
  • Molecular Junctions and Nanostructures

Recent publications by Cedric Huyghebaert cover several aspects of two-dimensional materials and their applications. These include:

  • 2D materials for future heterogeneous electronics, 2022, Nature Communications
  • Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices, 2020, Nature Communications
  • Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics, 2021, ACS Nano
  • Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy, 2021, 2D Materials
  • Understanding ambipolar transport in MoS 2 field effect transistors: the substrate is the key, 2020, Nanotechnology

Throughout their career, Cedric Huyghebaert has published in several key journals with multiple contributions, including:

  • 2D Materials
  • Nature Communications
  • Journal of Micro/Nanopatterning Materials and Metrology
  • ECS Journal of Solid State Science and Technology
  • Japanese Journal of Applied Physics

Collaboration forms a significant part of Huyghebaert's work, with frequent co-authors including:

  • Steven Brems
  • Inge Asselberghs
  • Joris Van Campenhout
  • Marianna Pantouvaki
  • Dries Van Thourhout

Best Publications

  • Graphene and two-dimensional materials for silicon technology.

    Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna

  • Graphene-silicon phase modulators with gigahertz bandwidth

    V. Sorianello;M. Midrio;G. Contestabile;I. Asselberghs

  • Method for producing interconnecting structure for integrated circuit

    セドリク・フイフヘバエルト;Cedric Huyghebaert;ヤン・ファエス;Jan Vaes

  • Graphene-based integrated photonics for next-generation datacom and telecom

    Marco Romagnoli;Vito Sorianello;Michele Midrio;Frank H. L. Koppens;Frank H. L. Koppens

  • Broadband 10 Gb/s operation of graphene electro-absorption modulator on silicon

    Yingtao Hu;Marianna Pantouvaki;Joris Van Campenhout;Steven Brems

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • 3D stacked IC demonstration using a through Silicon Via First approach

    J. Van Olmen;A. Mercha;G. Katti;C. Huyghebaert

  • Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

    A. Vandooren;D. Leonelli;R. Rooyackers;A. Hikavyy

  • High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

    E. Xenogiannopoulou;P. Tsipas;K. E. Aretouli;D. Tsoutsou

  • Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices

    Mario Lanza;Quentin Smets;Cedric Huyghebaert;Lain-Jong Li;Lain-Jong Li

  • Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration

    J. Van Olmen;C. Huyghebaert;J. Coenen;J. Van Aelst

  • 2D materials: roadmap to CMOS integration

    C. Huyghebaert;T. Schram;Q. Smets;T. Kumar Agarwal

  • 3D stacked ICs using Cu TSVs and Die to Wafer Hybrid Collective bonding

    G. Katti;A. Mercha;J. Van Olmen;C. Huyghebaert

  • Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures

    Daniele Chiappe;Inge Asselberghs;Surajit Sutar;Serena Iacovo

  • Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

    Anne Vandooren;Daniele Leonelli;Rita Rooyackers;Kai Arstila

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • High Cycling Stability and Extreme Rate Performance in Nanoscaled LiMn2O4 Thin Films.

    Brecht Put;Philippe M. Vereecken;Nouha Labyedh;Alfonso Sepulveda

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

    Daniele Chiappe;Jonathan Ludwig;Alessandra Leonhardt;Salim El Kazzi

  • Toward tunable doping in graphene FETs by molecular self-assembled monolayers.

    Bing Li;Alexander V. Klekachev;Mirco Cantoro;Cedric Huyghebaert

  • A new complementary hetero-junction vertical Tunnel-FET integration scheme

    R. Rooyackers;A. Vandooren;A. S. Verhulst;A. Walke

  • Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

    M. Romagnoli;V. Sorianello;M. Midrio;F. H. L. Koppens;F. H. L. Koppens

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