World's Best Scientists 2026 revealed!
Anne S. Verhulst

Anne S. Verhulst

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4768
World Ranking
5602
National Ranking
119

Anne S. Verhulst publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Anne S. Verhulst sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 167 publications — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Anne S. Verhulst D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Anne S. Verhulst sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Anne S. Verhulst is affiliated with Imec in Belgium and specializes in Engineering, focusing primarily on Electrical and Electronic Engineering. Their research spans related subfields including Biomedical Engineering, Molecular Biology, Materials Chemistry, and Computational Mechanics.

Their scientific contributions cover topics such as:

  • Nanopore and Nanochannel Transport Studies
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor Materials and Devices
  • Advanced Biosensing and Bioanalysis Techniques
  • Advanced Memory and Neural Computing
  • Fuel Cells and Related Materials

Recent publications authored or co-authored by Anne S. Verhulst include:

  • Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules, 2022, IEEE Sensors Journal
  • Investigation of Imprint in FE-HfO₂ and Its Recovery, 2020, IEEE Transactions on Electron Devices (co-author Y. Higashi)
  • Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET, 2020, IEEE Transactions on Electron Devices (co-author Jasper Bizindavyi)
  • Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification, 2022, IEEE Transactions on Electron Devices (co-author Sergiu Clima)
  • The Nanopore-FET as a High-Throughput Barcode Molecule Reader for Single-Molecule Omics and Read-out of DNA Digital Data Storage, 2022, 2022 International Electron Devices Meeting (IEDM) (co-author Koen Martens)

Their frequent collaborators include:

  • Kherim Willems
  • Pol Van Dorpe
  • Koen Martens
  • Sybren Santermans
  • Juliette Gevers

Anne S. Verhulst has published predominantly in journals such as:

  • IEEE Transactions on Electron Devices
  • IEEE Sensors Journal
  • 2022 International Electron Devices Meeting (IEDM)
  • The Journal of Physical Chemistry A
  • Communications Physics

Best Publications

  • Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Tunnel field-effect transistor without gate-drain overlap

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

    Anne S. Verhulst;Bart Sorée;Daniele Leonelli;William G. Vandenberghe

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR (TFET) MANUFACTURING METHOD

    Rooyackers Rita;Daniele Leonelli;Anne Van Doren;Verhulst Anne S

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Drain voltage dependent analytical model of tunnel field-effect transistors

    Anne S. Verhulst;Daniele Leonelli;Rita Rooyackers;Guido Groeseneken

  • Figure of merit for and identification of sub-60 mV/decade devices

    William G. Vandenberghe;Anne S. Verhulst;Bart Sorée;Wim Magnus

  • Tunnel field effect transistor with improved subthreshold swing

    Anne S. Verhulst

  • Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

    Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst

  • Analytical model for point and line tunneling in a tunnel field-effect transistor

    W. Vandenberghe;A.S. Verhulst;G. Groeseneken;B. Soree

  • Analytical model for a tunnel field-effect transistor

    W.G. Vandenberghe;A.S. Verhulst;G. Groeseneken;B. Soree

  • Tunnel field-effect transistor with gated tunnel barrier

    William G. Vandenberghe;Anne S. Verhulst

  • Wavelength-sensitive detector with elongate nanostructures

    Anne S. Verhulst;Wilfried Vandervorst

  • Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

    D. Verreck;A. S. Verhulst;Kuo-Hsing Kao;W. G. Vandenberghe

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Tunnel effect transistors based on silicon nanowires

    Anne S. Verhulst

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • Silicide Engineering to Boost Si Tunnel Transistor Drive Current

    Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst

  • Contrast reversal in scanning capacitance microscopy imaging

    Robert Stephenson;Anne Verhulst;Peter De Wolf;Matty Caymax

  • A new complementary hetero-junction vertical Tunnel-FET integration scheme

    R. Rooyackers;A. Vandooren;A. S. Verhulst;A. Walke

  • InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature

    AliReza Alian;Yves Mols;Caio C. M Bordallo;Devin Verreck

  • Performance Comparison of Interconnect Technology and Architecture Options for Deep Submicron Technology Nodes

    M. Bamal;S. List;M. Stucchi;A.S. Verhulst

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