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Anne S. Verhulst

Anne S. Verhulst

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4768
World Ranking
5602
National Ranking
119

Overview

Anne S. Verhulst is affiliated with Imec in Belgium and specializes in Engineering, focusing primarily on Electrical and Electronic Engineering. Their research spans related subfields including Biomedical Engineering, Molecular Biology, Materials Chemistry, and Computational Mechanics.

Their scientific contributions cover topics such as:

  • Nanopore and Nanochannel Transport Studies
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor Materials and Devices
  • Advanced Biosensing and Bioanalysis Techniques
  • Advanced Memory and Neural Computing
  • Fuel Cells and Related Materials

Recent publications authored or co-authored by Anne S. Verhulst include:

  • Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules, 2022, IEEE Sensors Journal
  • Investigation of Imprint in FE-HfO₂ and Its Recovery, 2020, IEEE Transactions on Electron Devices (co-author Y. Higashi)
  • Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET, 2020, IEEE Transactions on Electron Devices (co-author Jasper Bizindavyi)
  • Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification, 2022, IEEE Transactions on Electron Devices (co-author Sergiu Clima)
  • The Nanopore-FET as a High-Throughput Barcode Molecule Reader for Single-Molecule Omics and Read-out of DNA Digital Data Storage, 2022, 2022 International Electron Devices Meeting (IEDM) (co-author Koen Martens)

Their frequent collaborators include:

  • Kherim Willems
  • Pol Van Dorpe
  • Koen Martens
  • Sybren Santermans
  • Juliette Gevers

Anne S. Verhulst has published predominantly in journals such as:

  • IEEE Transactions on Electron Devices
  • IEEE Sensors Journal
  • 2022 International Electron Devices Meeting (IEDM)
  • The Journal of Physical Chemistry A
  • Communications Physics

Best Publications

  • Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Tunnel field-effect transistor without gate-drain overlap

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

    Anne S. Verhulst;Bart Sorée;Daniele Leonelli;William G. Vandenberghe

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

    Anne S. Verhulst;William G. Vandenberghe;Karen Maex;Guido Groeseneken

  • VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR (TFET) MANUFACTURING METHOD

    Rooyackers Rita;Daniele Leonelli;Anne Van Doren;Verhulst Anne S

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

    Kuo-Hsing Kao;A. S. Verhulst;W. G. Vandenberghe;B. Soree

  • Drain voltage dependent analytical model of tunnel field-effect transistors

    Anne S. Verhulst;Daniele Leonelli;Rita Rooyackers;Guido Groeseneken

  • Figure of merit for and identification of sub-60 mV/decade devices

    William G. Vandenberghe;Anne S. Verhulst;Bart Sorée;Wim Magnus

  • Tunnel field effect transistor with improved subthreshold swing

    Anne S. Verhulst

  • Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

    Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst

  • Analytical model for point and line tunneling in a tunnel field-effect transistor

    W. Vandenberghe;A.S. Verhulst;G. Groeseneken;B. Soree

  • Analytical model for a tunnel field-effect transistor

    W.G. Vandenberghe;A.S. Verhulst;G. Groeseneken;B. Soree

  • Tunnel field-effect transistor with gated tunnel barrier

    William G. Vandenberghe;Anne S. Verhulst

  • Wavelength-sensitive detector with elongate nanostructures

    Anne S. Verhulst;Wilfried Vandervorst

  • Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

    D. Verreck;A. S. Verhulst;Kuo-Hsing Kao;W. G. Vandenberghe

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Tunnel effect transistors based on silicon nanowires

    Anne S. Verhulst

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • Silicide Engineering to Boost Si Tunnel Transistor Drive Current

    Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst

  • Contrast reversal in scanning capacitance microscopy imaging

    Robert Stephenson;Anne Verhulst;Peter De Wolf;Matty Caymax

  • A new complementary hetero-junction vertical Tunnel-FET integration scheme

    R. Rooyackers;A. Vandooren;A. S. Verhulst;A. Walke

  • InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature

    AliReza Alian;Yves Mols;Caio C. M Bordallo;Devin Verreck

  • Performance Comparison of Interconnect Technology and Architecture Options for Deep Submicron Technology Nodes

    M. Bamal;S. List;M. Stucchi;A.S. Verhulst

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