World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
60
Citations
14790
World Ranking
6976
National Ranking
1754

Heike Riel publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Heike Riel sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 205 publications — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Heike Riel D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Heike Riel sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2020 - Fellow of American Physical Society (APS) Citation For scientific and technical accomplishments in materials and device research for nanoscale electronics in the fields of semiconducting nanowires and organic lightemitting devices for display applications
  • 2017 - David Adler Lectureship Award in the Field of Materials Physics

Overview

Heike Riel is affiliated with IBM in the United States and has contributed extensively to research at the intersection of physics, engineering, and materials science. Their work has a strong focus on nanoscale electronics and device research, with an emphasis on quantum and electron transport phenomena.

Their recent papers cover a variety of topics within these fields, including:

  • Out-of-equilibrium phonons in gated superconducting switches, 2022, Nature Electronics
  • Quantum Computing Technology, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Selective Area Growth of PbTe Nanowire Networks on InP, 2022, Advanced Functional Materials
  • Small Charging Energies and g-Factor Anisotropy in PbTe Quantum Dots, 2022, Nano Letters
  • Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs, 2023, Physical Review Letters

They frequently collaborate with the following co-authors:

  • Fabrizio Nichele
  • Markus F. Ritter
  • Andreas Fuhrer
  • Sofieke C. ten Kate
  • Manuel Hinderling

Their work has been published in numerous academic venues, notably:

  • Zenodo (CERN European Organization for Nuclear Research)
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • Nano Letters
  • arXiv (Cornell University)
  • Nature Electronics

Main fields of study include physics and astronomy and engineering, with significant emphasis on the following subfields:

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Artificial Intelligence

The primary topics of research encompass:

  • Quantum and electron transport phenomena
  • Physics of Superconductivity and Magnetism
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Topological Materials and Phenomena

Heike Riel has been recognized with the following awards:

  • Fellow of American Physical Society (APS), 2020, for scientific and technical accomplishments in materials and device research for nanoscale electronics in semiconducting nanowires and organic light-emitting devices for display applications
  • David Adler Lectureship Award in the Field of Materials Physics, 2017

Best Publications

  • Tunnel field-effect transistors as energy-efficient electronic switches

    Adrian M. Ionescu;Heike Riel

  • Realization of a silicon nanowire vertical surround-gate field-effect transistor.

    Volker Schmidt;Heike Riel;Stephan Senz;Siegfried Karg

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Donor deactivation in silicon nanostructures.

    Mikael T. Björk;Heinz Schmid;Joachim Knoch;Heike Riel

  • Reversible and controllable switching of a single-molecule junction.

    Emanuel Lörtscher;Jacob W. Ciszek;James Tour;Heike Riel

  • Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes

    Beat Ruhstaller;S. Carter;S. Barth;H. Riel

  • Statistical Approach to Investigating Transport through Single Molecules

    Emanuel Lörtscher;Heiko B. Weber;Heike Riel

  • Organic light-emitting devices

    Siegfried Johannes Barth;Tilman A. Beierlein;Siegfried F. Karg;Heike Riel

  • Electron mobility in tris(8-hydroxy-quinoline)aluminum thin films determined via transient electroluminescence from single- and multilayer organic light-emitting diodes

    S. Barth;P. Müller;H. Riel;P. F. Seidler

  • Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling

    H. Riel;S. Karg;T. Beierlein;B. Ruhstaller

  • Temperature mapping of operating nanoscale devices by scanning probe thermometry.

    Fabian Menges;Philipp Mensch;Heinz Schmid;Heike Riel

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    H. Schmid;Mattias Borg;K. Moselund;L. Gignac

  • Silicon nanowire tunneling field-effect transistors

    M. T. Björk;J. Knoch;H. Schmid;H. Riel

  • Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study

    H. Riel;S. Karg;T. Beierlein;W. Rieß

  • Preparation of Metallic Films on Elastomeric Stamps and Their Application for Contact Processing and Contact Printing

    H. Schmid;H. Wolf;R. Allenspach;H. Riel

  • Influence of trapped and interfacial charges in organic multilayer light-emitting devices

    W. Brütting;H. Riel;T. Beierlein;W. Riess

  • Simulating electronic and optical processes in multilayer organic light-emitting devices

    B. Ruhstaller;T. Beierlein;H. Riel;S. Karg

  • Transport properties of a single-molecule diode.

    Emanuel Lörtscher;Bernd Gotsmann;Youngu Lee;Luping Yu

  • Vertical III-V nanowire device integration on Si(100).

    Mattias Borg;Heinz Schmid;Kirsten E. Moselund;Giorgio Signorello

  • Influence of trapped and interfacial charges in organic multilayer light-emitting devices

    W. Riess;H. Riel;T. Beierlein;W. Brütting

Frequent Co-Authors

Heinz Schmid
Heinz Schmid IBM (United States)
Walter Riess
Walter Riess IBM Research - Zurich
Kirsten Moselund
Kirsten Moselund Paul Scherrer Institute
Siegfried Karg
Siegfried Karg IBM (United States)
Bernd Gotsmann
Bernd Gotsmann IBM Research - Zurich
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Ute Drechsler
Ute Drechsler IBM Research - Zurich
Paul M. Solomon
Paul M. Solomon IBM (United States)
Marcel Mayor
Marcel Mayor University of Basel

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