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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 60 6976 6740 1754 1629 205 14790

Heike Riel publications per year

The chart shows the history of publications by Heike Riel between 1998 and 2023, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Heike Riel published across 26 years, from 1998 to 2023, averaging 8.5 papers a year. Output peaked at 24 publications in 2017. 14 of the 222 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1998 to 2023. Vertical axis: number of publications, 0 to 24. Peak 24 publications in 2017. 1998: 2 publications 1999: 2 publications 2000: 4 publications 2001: 7 publications 2002: 3 publications 2003: 9 publications 2004: 4 publications 2005: 0 publications 2006: 5 publications 2007: 7 publications 2008: 9 publications 2009: 10 publications 2010: 9 publications 2011: 12 publications 2012: 8 publications 2013: 16 publications 2014: 15 publications 2015: 16 publications 2016: 20 publications 2017: 24 publications 2018: 10 publications 2019: 9 publications 2020: 2 publications 2021: 5 publications 2022: 10 publications 2023: 4 publications
1998 2023

222 publications in total across all disciplines

View publications per year as a table
Heike Riel: publications per year, 1998 to 2023
Year Publications
1998 2
1999 2
2000 4
2001 7
2002 3
2003 9
2004 4
2005 0
2006 5
2007 7
2008 9
2009 10
2010 9
2011 12
2012 8
2013 16
2014 15
2015 16
2016 20
2017 24
2018 10
2019 9
2020 2
2021 5
2022 10
2023 4
Total 222
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Heike Riel publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Heike Riel sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 190–209 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 205 publications — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891 205
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Heike Riel D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Heike Riel sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 60
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2020 - Fellow of American Physical Society (APS) Citation For scientific and technical accomplishments in materials and device research for nanoscale electronics in the fields of semiconducting nanowires and organic lightemitting devices for display applications
  • 2017 - David Adler Lectureship Award in the Field of Materials Physics

Overview

Heike Riel is affiliated with IBM in the United States and has contributed extensively to research at the intersection of physics, engineering, and materials science. Their work has a strong focus on nanoscale electronics and device research, with an emphasis on quantum and electron transport phenomena.

Their recent papers cover a variety of topics within these fields, including:

  • Out-of-equilibrium phonons in gated superconducting switches, 2022, Nature Electronics
  • Quantum Computing Technology, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Selective Area Growth of PbTe Nanowire Networks on InP, 2022, Advanced Functional Materials
  • Small Charging Energies and g-Factor Anisotropy in PbTe Quantum Dots, 2022, Nano Letters
  • Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs, 2023, Physical Review Letters

They frequently collaborate with the following co-authors:

  • Fabrizio Nichele
  • Markus F. Ritter
  • Andreas Fuhrer
  • Sofieke C. ten Kate
  • Manuel Hinderling

Their work has been published in numerous academic venues, notably:

  • Zenodo (CERN European Organization for Nuclear Research)
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • Nano Letters
  • arXiv (Cornell University)
  • Nature Electronics

Main fields of study include physics and astronomy and engineering, with significant emphasis on the following subfields:

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Artificial Intelligence

The primary topics of research encompass:

  • Quantum and electron transport phenomena
  • Physics of Superconductivity and Magnetism
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Topological Materials and Phenomena

Heike Riel has been recognized with the following awards:

  • Fellow of American Physical Society (APS), 2020, for scientific and technical accomplishments in materials and device research for nanoscale electronics in semiconducting nanowires and organic light-emitting devices for display applications
  • David Adler Lectureship Award in the Field of Materials Physics, 2017

Best Publications

  • Tunnel field-effect transistors as energy-efficient electronic switches

    Adrian M. Ionescu;Heike Riel

  • Realization of a silicon nanowire vertical surround-gate field-effect transistor.

    Volker Schmidt;Heike Riel;Stephan Senz;Siegfried Karg

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Donor deactivation in silicon nanostructures.

    Mikael T. Björk;Heinz Schmid;Joachim Knoch;Heike Riel

  • Reversible and controllable switching of a single-molecule junction.

    Emanuel Lörtscher;Jacob W. Ciszek;James Tour;Heike Riel

  • Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes

    Beat Ruhstaller;S. Carter;S. Barth;H. Riel

  • Statistical Approach to Investigating Transport through Single Molecules

    Emanuel Lörtscher;Heiko B. Weber;Heike Riel

  • Organic light-emitting devices

    Siegfried Johannes Barth;Tilman A. Beierlein;Siegfried F. Karg;Heike Riel

  • Electron mobility in tris(8-hydroxy-quinoline)aluminum thin films determined via transient electroluminescence from single- and multilayer organic light-emitting diodes

    S. Barth;P. Müller;H. Riel;P. F. Seidler

  • Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling

    H. Riel;S. Karg;T. Beierlein;B. Ruhstaller

  • Temperature mapping of operating nanoscale devices by scanning probe thermometry.

    Fabian Menges;Philipp Mensch;Heinz Schmid;Heike Riel

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    H. Schmid;Mattias Borg;K. Moselund;L. Gignac

  • Silicon nanowire tunneling field-effect transistors

    M. T. Björk;J. Knoch;H. Schmid;H. Riel

  • Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study

    H. Riel;S. Karg;T. Beierlein;W. Rieß

  • Preparation of Metallic Films on Elastomeric Stamps and Their Application for Contact Processing and Contact Printing

    H. Schmid;H. Wolf;R. Allenspach;H. Riel

  • Influence of trapped and interfacial charges in organic multilayer light-emitting devices

    W. Brütting;H. Riel;T. Beierlein;W. Riess

  • Simulating electronic and optical processes in multilayer organic light-emitting devices

    B. Ruhstaller;T. Beierlein;H. Riel;S. Karg

  • Transport properties of a single-molecule diode.

    Emanuel Lörtscher;Bernd Gotsmann;Youngu Lee;Luping Yu

  • Vertical III-V nanowire device integration on Si(100).

    Mattias Borg;Heinz Schmid;Kirsten E. Moselund;Giorgio Signorello

  • Influence of trapped and interfacial charges in organic multilayer light-emitting devices

    W. Riess;H. Riel;T. Beierlein;W. Brütting

Frequent Co-Authors

Heinz Schmid
Heinz Schmid IBM (United States)
Walter Riess
Walter Riess IBM Research - Zurich
Kirsten Moselund
Kirsten Moselund Paul Scherrer Institute
Siegfried Karg
Siegfried Karg IBM (United States)
Bernd Gotsmann
Bernd Gotsmann IBM Research - Zurich
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Ute Drechsler
Ute Drechsler IBM Research - Zurich
Paul M. Solomon
Paul M. Solomon IBM (United States)
Marcel Mayor
Marcel Mayor University of Basel

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