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Overview

Mikael Björk is affiliated with Sol Voltaics in Sweden, where research activities focus on advanced semiconductor technologies and materials science. Their work spans multiple disciplines including physics and astronomy, engineering, and materials science.

The scientific contributions of Mikael Björk cover specialized subfields such as condensed matter physics, electrical and electronic engineering, and electronic, optical, and magnetic materials. The main topics investigated by the scientist include:

  • GaN-based semiconductor devices and materials
  • Silicon carbide semiconductor technologies
  • Ga2O3 and related materials

One notable publication authored by Björk is titled "Vertical GaN devices: Process and reliability", published in 2021 in the journal Microelectronics Reliability. This paper explores aspects of process technology and reliability features pertinent to vertical gallium nitride (GaN) semiconductor devices, a topic relevant to their research focus.

The scientist has collaborated with several frequent co-authors, reflecting a network of interdisciplinary research partners. These co-authors include:

  • Shuzhen You
  • Karen Geens
  • Matteo Borga
  • Hu Liang
  • H. Hahn

Björk's scholarly output also shows engagement with recognized publication venues. Most notably, contributions have appeared in:

  • Microelectronics Reliability

The research interests and publications indicate a sustained focus on semiconductor materials crucial for emerging electronic and optoelectronic applications. The scientist's work on GaN-based and silicon carbide semiconductor devices aligns with ongoing technological advancements in power electronics and material engineering.

Throughout their career, Mikael Björk has integrated concepts from physics and engineering disciplines to address challenges related to material properties and device performance. The interdisciplinary nature of their work bridges fundamental scientific inquiry and applied research in materials science.

Best Publications

  • One-dimensional steeplechase for electrons realized

    Mikael Björk;Jonas Ohlsson;T Sass;Ann Persson

  • One-dimensional heterostructures in semiconductor nanowhiskers

    M. T. Björk;B. J. Ohlsson;T. Sass;A. I. Persson

  • Integration of Colloidal Nanocrystals into Lithographically Patterned Devices

    Yi Cui;Mikael T. Björk;J. Alexander Liddle;Carsten Sönnichsen

  • Nanowire resonant tunneling diodes

    M. T. Björk;B. J. Ohlsson;C. Thelander;A. I. Persson

  • Single-electron transistors in heterostructure nanowires.

    C. Thelander;T. Mårtensson;M. T. Björk;B. J. Ohlsson

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Role of surface diffusion in chemical beam epitaxy of InAs nanowires

    Linus E. Jensen;Mikael T. Björk;Sören Jeppesen;Ann I. Persson

  • Donor deactivation in silicon nanostructures.

    Mikael T. Björk;Heinz Schmid;Joachim Knoch;Heike Riel

  • Few-Electron Quantum Dots in Nanowires

    Mikael T. Björk;Claes Thelander;Adam E. Hansen;Linus E. Jensen

  • Size-, shape-, and position-controlled GaAs nano-whiskers

    B. J. Ohlsson;M. T. Björk;M. H. Magnusson;K. Deppert

  • A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Aberg;Giuliano Vescovi;Damir Asoli;Umear Naseem

  • Semiconductor nanowires for 0D and 1D physics and applications

    L Samuelson;C Thelander;M T Björk;M Borgström

  • Silicon nanowire tunneling field-effect transistors

    M. T. Björk;J. Knoch;H. Schmid;H. Riel

  • Sulfur passivation for ohmic contact formation to InAs nanowires

    Dmitry Suyatin;Dmitry Suyatin;Claes Thelander;M. T. Björk;Ivan Maximov

  • Tunable Double Quantum Dots in InAs Nanowires Defined by Local Gate Electrodes

    Carina Fasth;Andreas Fuhrer;Mikael T. Björk;Lars Samuelson

  • Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

    B.J Ohlsson;M.T Björk;A.I Persson;C Thelander

  • Spin relaxation in InAs nanowires studied by tunable weak antilocalization

    Adam Hansen;Mikael Björk;Carina Fasth;Claes Thelander

  • Electron transport in InAs nanowires and heterostructure nanowire devices

    C. Thelander;M.T. Björk;M.W. Larsson;A.E. Hansen

  • Tunable effective g factor in InAs nanowire quantum dots

    Mikael Björk;Andreas Fuhrer;Adam Hansen;Marcus Larsson

  • Electrical transport through a single nanoscale semiconductor branch point.

    Yi Cui;Uri Banin;Mikael T. Bjork;A. Paul Alivisatos

Frequent Co-Authors

Lars Samuelson
Lars Samuelson Lund University
Claes Thelander
Claes Thelander Lund University
Heike Riel
Heike Riel IBM (United States)
Heinz Schmid
Heinz Schmid IBM (United States)
Knut Deppert
Knut Deppert Lund University
Siegfried Karg
Siegfried Karg IBM (United States)
Werner Seifert
Werner Seifert Lund University
Lasse Jensen
Lasse Jensen Pennsylvania State University
Magnus T. Borgström
Magnus T. Borgström Lund University
A. Paul Alivisatos
A. Paul Alivisatos University of Chicago

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