World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
10269
World Ranking
3178
National Ranking
1190

Materials Science

D-Index
47
Citations
10242
World Ranking
11031
National Ranking
2592

Siegfried Karg publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Siegfried Karg sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 141 publications — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Siegfried Karg D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Siegfried Karg sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Siegfried Karg is affiliated with IBM in the United States and has an active research career focused on interdisciplinary fields intersecting engineering and computer science. Their main areas of study include Electrical and Electronic Engineering and Artificial Intelligence, with a strong emphasis on emerging materials and neural computation technologies.

The scientist's research contributions span several primary topics. These include:

  • Advanced Memory and Neural Computing
  • Neural Networks and Reservoir Computing
  • Transition Metal Oxide Nanomaterials
  • Neural dynamics and brain function
  • CCD and CMOS Imaging Sensors
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design

Karg has published extensively, with notable papers including:

  • Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks. (2021), PubMed
  • Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators (2020), IEEE Electron Device Letters
  • How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase (2021), IEEE Transactions on Neural Networks and Learning Systems
  • A CMOS-compatible oscillation-based VO2 Ising machine solver (2024), Nature Communications
  • Oscillatory Neural Networks Using VO2 Based Phase Encoded Logic (2021), Frontiers in Neuroscience

The scientist's work frequently appears in venues such as:

  • Frontiers in Neuroscience
  • Scientific Reports
  • IEEE Transactions on Neural Networks and Learning Systems
  • Nature Communications
  • PubMed

Collaboration has been an element of their research, with frequent coauthors including:

  • Aida Todri-Sanial
  • Elisabetta Corti
  • Stefania Carapezzi
  • Bernd Gotsmann
  • Corentin Delacour

This scientist's projects often bridge neural computing approaches with novel materials such as vanadium dioxide (VO2) for oscillatory neural networks and analog filtering. Their work explores new paradigms in device physics as applied to artificial intelligence and memory-computing architectures.

Overall, their publication record and subject focus reflect a consistent interest in combining electrical engineering principles with computational neuroscience and next-generation semiconductor technologies.

Best Publications

  • Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory

    M. Janousch;G. I. Meijer;U. Staub;B. Delley

  • Polymeric anodes for improved polymer light-emitting diode performance

    S. A. Carter;M. Angelopoulos;S. Karg;P. J. Brock

  • Realization of a silicon nanowire vertical surround-gate field-effect transistor.

    Volker Schmidt;Heike Riel;Stephan Senz;Siegfried Karg

  • Thermally Stable Blue-Light-Emitting Copolymers of Poly(alkylfluorene)

    M. Kreyenschmidt;G. Klaerner;T. Fuhrer;J. Ashenhurst

  • Ambipolar light-emitting organic field-effect transistor

    Constance Rost;Siegfried Karg;Walter Riess;Maria Antonietta Loi

  • Encapsulated organic light emitting device

    Eliav Haskal;Siegfried Karg;Jesse Richard Salem;John Campbell Scott

  • Increased brightness and lifetime of polymer light-emitting diodes with polyaniline anodes

    S. Karg;J.C. Scott;J.R. Salem;M. Angdopoulos

  • Mechanisms of injection enhancement in organic light-emitting diodes through an Al/LiF electrode

    H. Heil;J. Steiger;S. Karg;M. Gastel

  • Electrical and optical characterization of poly(phenylene-vinylene) light emitting diodes

    S. Karg;W. Riess;V. Dyakonov;M. Schwoerer

  • Organic light-emitting devices

    Siegfried Johannes Barth;Tilman A. Beierlein;Siegfried F. Karg;Heike Riel

  • Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling

    H. Riel;S. Karg;T. Beierlein;B. Ruhstaller

  • Ambipolar organic field-effect transistor based on an organic heterostructure

    Constance Rost;David J. Gundlach;Siegfried Karg;Walter Rieß

  • Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study

    H. Riel;S. Karg;T. Beierlein;W. Rieß

  • Charge carrier mobility in poly(p-phenylenevinylene) studied by the time-of-flight technique

    E. Lebedev;Th. Dittrich;V. Petrova-Koch;S. Karg

  • Polymeric anodes for organic light-emitting diodes

    J.C. Scott;S.A. Carter;S.A. Carter;S. Karg;M. Angelopoulos

  • Light-emitting diodes based on poly-p-phenylene-vinylene: II. Impedance spectroscopy

    M. Meier;S. Karg;W. Riess

  • Preparation of Metallic Films on Elastomeric Stamps and Their Application for Contact Processing and Contact Printing

    H. Schmid;H. Wolf;R. Allenspach;H. Riel

  • Simulating electronic and optical processes in multilayer organic light-emitting devices

    B. Ruhstaller;T. Beierlein;H. Riel;S. Karg

  • Light-emitting diodes based on poly-p-phenylene-vinylene: I. Charge-carrier injection and transport

    S. Karg;M. Meier;W. Riess

  • Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

    Giorgio Signorello;Siegfried Karg;Mikael T. Björk;Bernd Gotsmann

  • Tuning Optoelectronic Properties of Ambipolar Organic Light-Emitting Transistors Using a Bulk-Heterojunction Approach

    Maria Antonietta Loi;Constance Rost-Bietsch;Mauro Murgia;Siegfried Karg

Frequent Co-Authors

Heike Riel
Heike Riel IBM (United States)
Walter Riess
Walter Riess IBM Research - Zurich
Heinz Schmid
Heinz Schmid IBM (United States)
Kirsten Moselund
Kirsten Moselund Paul Scherrer Institute
Bernd Gotsmann
Bernd Gotsmann IBM Research - Zurich
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Francisco Gamiz
Francisco Gamiz University of Granada
Vladimir Dyakonov
Vladimir Dyakonov University of Würzburg
John Robertson
John Robertson University of Cambridge

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Related Online Degrees & Career Pathways

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Additionally, a master's in instructional design can open paths to training and development roles within technology firms, where expertise in technical subject matter and education combine for impactful career growth.

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