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Materials Science

D-Index
43
Citations
8728
World Ranking
12245
National Ranking
162

Engineering and Technology

D-Index
46
Citations
9100
World Ranking
5114
National Ranking
79

Overview

Bernd Gotsmann is affiliated with IBM Research - Zurich in Switzerland. Their research spans multiple fields primarily within Engineering, Physics and Astronomy, and Materials Science. Their published work addresses advanced topics at the intersection of these domains.

The main fields of study associated with their research include:

  • Engineering
  • Physics and Astronomy
  • Materials Science

Key subfields contributing to their research output are:

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Polymers and Plastics
  • Biomedical Engineering

The primary research topics explored by Bernd Gotsmann include:

  • Advanced Thermoelectric Materials and Devices
  • Topological Materials and Phenomena
  • Photonic and Optical Devices
  • Thermal properties of materials
  • Molecular Junctions and Nanostructures
  • Semiconductor Quantum Structures and Devices
  • Advanced Memory and Neural Computing

Recent publications by Bernd Gotsmann illustrate a focus on photonics, neural computing, and thermoelectric characterization. Selected papers include:

  • "Waveguide coupled III-V photodiodes monolithically integrated on Si," 2022, Nature Communications
  • "Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks," 2021, PubMed
  • "Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators," 2020, IEEE Electron Device Letters
  • "Single-Material Graphene Thermocouples," 2020, Advanced Functional Materials
  • "Full thermoelectric characterization of a single molecule," 2023, Nature Communications

Collaborations are a significant part of their research activities, with frequent co-authors including:

  • Heinz Schmid
  • Kirsten E. Moselund
  • Federico Balduini
  • Cezar B. Zota
  • Marilyne Sousa

Bernd Gotsmann has contributed to a range of publication venues. The most frequent platforms where their work appears are:

  • arXiv (Cornell University)
  • Zenodo (CERN European Organization for Nuclear Research)
  • Nature Communications
  • Nanoscale
  • Advanced Functional Materials

Best Publications

  • The "millipede" - nanotechnology entering data storage

    P. Vettiger;G. Cross;M. Despont;U. Drechsler

  • Nanoscale Three-Dimensional Patterning of Molecular Resists by Scanning Probes

    David Pires;James L. Hedrick;Anuja De Silva;Jane Frommer

  • How to measure energy dissipation in dynamic mode atomic force microscopy

    B. Anczykowski;B. Gotsmann;H. Fuchs;J.P. Cleveland

  • Conservative and dissipative tip-sample interaction forces probed with dynamic AFM

    B. Gotsmann;C. Seidel;B. Anczykowski;H. Fuchs

  • Experimental signatures of the mixed axial–gravitational anomaly in the Weyl semimetal NbP

    Johannes Gooth;Johannes Gooth;Anna C. Niemann;Anna C. Niemann;Tobias Meng;Adolfo G. Grushin

  • Atomistic wear in a single asperity sliding contact.

    Bernd Gotsmann;Mark A. Lantz

  • Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon

    Harish Bhaskaran;Bernd Gotsmann;Abu Sebastian;Ute Drechsler

  • Thermal and electrical signatures of a hydrodynamic electron fluid in tungsten diphosphide.

    J Gooth;J Gooth;F Menges;F Menges;N Kumar;V Süβ

  • Temperature mapping of operating nanoscale devices by scanning probe thermometry.

    Fabian Menges;Philipp Mensch;Heinz Schmid;Heike Riel

  • Transport properties of a single-molecule diode.

    Emanuel Lörtscher;Bernd Gotsmann;Youngu Lee;Luping Yu

  • Length-dependent thermal transport along molecular chains.

    T Meier;T Meier;F Menges;F Menges;P Nirmalraj;H Hölscher

  • Quantized thermal transport across contacts of rough surfaces

    B. Gotsmann;M. A. Lantz

  • Electrical and Thermal Transport at the Planckian Bound of Dissipation in the Hydrodynamic Electron Fluid of WP2

    J. Gooth;F. Menges;C. Shekhar;V. Süß

  • Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain

    Giorgio Signorello;Siegfried Karg;Mikael T. Björk;Bernd Gotsmann

  • Quantitative thermometry of nanoscale hot spots.

    Fabian Menges;Fabian Menges;Heike Riel;Andreas Stemmer;Bernd Gotsmann

  • Measurement of conservative and dissipative tip-sample interaction forces with a dynamic force microscope using the frequency modulation technique

    H. Hölscher;B. Gotsmann;W. Allers;U. D. Schwarz

  • Probe-based ultrahigh-density storage technology

    A. Pantazi;A. Sebastian;T. A. Antonakopoulos;P. Bächtold

  • On the Application of Transition State Theory to Atomic-Scale Wear

    Tevis D. B. Jacobs;Bernd Gotsmann;Mark A. Lantz;Robert W. Carpick

  • Exploiting Chemical Switching in a Diels–Alder Polymer for Nanoscale Probe Lithography and Data Storage

    Bernd Gotsmann;Urs Duerig;Jane Frommer;Craig J. Hawker;Craig J. Hawker

  • Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress

    G. Signorello;E. Lörtscher;P.A. Khomyakov;S. Karg

Frequent Co-Authors

Heike Riel
Heike Riel IBM (United States)
Mark A. Lantz
Mark A. Lantz IBM Research - Zurich
Ute Drechsler
Ute Drechsler IBM Research - Zurich
Siegfried Karg
Siegfried Karg IBM (United States)
Harald Fuchs
Harald Fuchs University of Münster
Michel Despont
Michel Despont Swiss Center for Electronics and Microtechnology (Switzerland)
Hugo E. Rothuizen
Hugo E. Rothuizen IBM Research - Zurich
Heinz Schmid
Heinz Schmid IBM (United States)
James L. Hedrick
James L. Hedrick IBM (United States)
Robert D. Miller
Robert D. Miller Stanford University

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