World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
10473
World Ranking
4400
National Ranking
126

Joachim Knoch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Joachim Knoch sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 191 publications — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Joachim Knoch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Joachim Knoch sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Joachim Knoch is affiliated with RWTH Aachen University in Germany and has focused their research primarily within the field of Engineering, with a strong emphasis on Electrical and Electronic Engineering. Their scholarly output spans several subfields including Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Molecular Biology.

The scientist's research covers a number of main topics, notably:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Semiconductor materials and interfaces
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Silicon Nanostructures and Photoluminescence

Joachim Knoch has contributed to various publication venues, with repeated appearances in:

  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • RWTH Publications (RWTH Aachen)
  • IEEE Electron Device Letters
  • physica status solidi (a)

Some of their recent scientific papers include:

  • "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon", 2023, Communications Engineering
  • "Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection", 2022, Biosensors and Bioelectronics
  • "Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance", 2020, ACS Applied Nano Materials
  • "Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature", 2022, IEEE Electron Device Letters
  • "Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs", 2020, IEEE Transactions on Electron Devices

Their research collaborations involve frequent co-authors including Detlev Grützmacher, Qing-Tai Zhao, Yi Han, Benjamin Richstein, and M. Frentzen.

Best Publications

  • Band-to-band tunneling in carbon nanotube field-effect transistors.

    J. Appenzeller;Y.-M. Lin;J. Knoch;Ph. Avouris

  • The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

    Zhihong Chen;Joerg Appenzeller;Joachim Knoch;Yu-ming Lin

  • Field-modulated carrier transport in carbon nanotube transistors.

    J. Appenzeller;J. Knoch;V. Derycke;R. Martel

  • High-performance carbon nanotube field-effect transistor with tunable polarities

    Yu-Ming Lin;J. Appenzeller;J. Knoch;P. Avouris

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

    J. Appenzeller;Yu-Ming Lin;J. Knoch;Zhihong Chen

  • Donor deactivation in silicon nanostructures.

    Mikael T. Björk;Heinz Schmid;Joachim Knoch;Heike Riel

  • Tunneling versus thermionic emission in one-dimensional semiconductors.

    J. Appenzeller;M. Radosavljević;J. Knoch;Ph. Avouris

  • Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

    J. Knoch;S. Mantl;J. Appenzeller

  • Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

    J. Knoch;J. Appenzeller

  • Tunneling phenomena in carbon nanotube field‐effect transistors

    Joachim Knoch;Joerg Appenzeller

  • Silicon nanowire tunneling field-effect transistors

    M. T. Björk;J. Knoch;H. Schmid;H. Riel

  • Carbon nanotube electronics

    J. Appenzeller;J. Knoch;R. Martel;V. Derycke

  • Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

    M. Zhang;J. Knoch;Q.T. Zhao;St. Lenk

  • Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes.

    Yu-Ming Lin;Joerg Appenzeller;Joachim Knoch;Zhihong Chen

  • High performance of potassium n-doped carbon nanotube field-effect transistors

    M. Radosavljević;J. Appenzeller;Ph. Avouris;J. Knoch

  • Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

    C. Sandow;J. Knoch;C. Urban;Q.-T. Zhao

  • Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane

    H. Schmid;M. T. Björk;J. Knoch;H. Riel

  • Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.

    J. Appenzeller;J. Knoch;M. Radosavljević;Ph. Avouris

  • High performance n-doped carbon nanotube field-effect transistors

    M. Radosavljevic;J. Appenzeller;Ph. Avouris;J. Knoch

Frequent Co-Authors

Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Phaedon Avouris
Phaedon Avouris IBM (United States)
Walter Riess
Walter Riess IBM Research - Zurich
Heike Riel
Heike Riel IBM (United States)
Heinz Schmid
Heinz Schmid IBM (United States)
S. Mantl
S. Mantl Forschungszentrum Jülich
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)

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