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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
10473
World Ranking
4400
National Ranking
127

Overview

Joachim Knoch is affiliated with RWTH Aachen University in Germany and has focused their research primarily within the field of Engineering, with a strong emphasis on Electrical and Electronic Engineering. Their scholarly output spans several subfields including Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Molecular Biology.

The scientist's research covers a number of main topics, notably:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Semiconductor materials and interfaces
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Silicon Nanostructures and Photoluminescence

Joachim Knoch has contributed to various publication venues, with repeated appearances in:

  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • RWTH Publications (RWTH Aachen)
  • IEEE Electron Device Letters
  • physica status solidi (a)

Some of their recent scientific papers include:

  • "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon", 2023, Communications Engineering
  • "Delineating charge and capacitance transduction in system-integrated graphene-based BioFETs used as aptasensors for malaria detection", 2022, Biosensors and Bioelectronics
  • "Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance", 2020, ACS Applied Nano Materials
  • "Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature", 2022, IEEE Electron Device Letters
  • "Diameter Scaling of Vertical Ge Gate- All-Around Nanowire pMOSFETs", 2020, IEEE Transactions on Electron Devices

Their research collaborations involve frequent co-authors including Detlev Grützmacher, Qing-Tai Zhao, Yi Han, Benjamin Richstein, and M. Frentzen.

Best Publications

  • Band-to-band tunneling in carbon nanotube field-effect transistors.

    J. Appenzeller;Y.-M. Lin;J. Knoch;Ph. Avouris

  • The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

    Zhihong Chen;Joerg Appenzeller;Joachim Knoch;Yu-ming Lin

  • Field-modulated carrier transport in carbon nanotube transistors.

    J. Appenzeller;J. Knoch;V. Derycke;R. Martel

  • High-performance carbon nanotube field-effect transistor with tunable polarities

    Yu-Ming Lin;J. Appenzeller;J. Knoch;P. Avouris

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

    J. Appenzeller;Yu-Ming Lin;J. Knoch;Zhihong Chen

  • Donor deactivation in silicon nanostructures.

    Mikael T. Björk;Heinz Schmid;Joachim Knoch;Heike Riel

  • Tunneling versus thermionic emission in one-dimensional semiconductors.

    J. Appenzeller;M. Radosavljević;J. Knoch;Ph. Avouris

  • Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

    J. Knoch;S. Mantl;J. Appenzeller

  • Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

    J. Knoch;J. Appenzeller

  • Tunneling phenomena in carbon nanotube field‐effect transistors

    Joachim Knoch;Joerg Appenzeller

  • Silicon nanowire tunneling field-effect transistors

    M. T. Björk;J. Knoch;H. Schmid;H. Riel

  • Carbon nanotube electronics

    J. Appenzeller;J. Knoch;R. Martel;V. Derycke

  • Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

    M. Zhang;J. Knoch;Q.T. Zhao;St. Lenk

  • Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes.

    Yu-Ming Lin;Joerg Appenzeller;Joachim Knoch;Zhihong Chen

  • High performance of potassium n-doped carbon nanotube field-effect transistors

    M. Radosavljević;J. Appenzeller;Ph. Avouris;J. Knoch

  • Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

    C. Sandow;J. Knoch;C. Urban;Q.-T. Zhao

  • Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane

    H. Schmid;M. T. Björk;J. Knoch;H. Riel

  • Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.

    J. Appenzeller;J. Knoch;M. Radosavljević;Ph. Avouris

  • High performance n-doped carbon nanotube field-effect transistors

    M. Radosavljevic;J. Appenzeller;Ph. Avouris;J. Knoch

Frequent Co-Authors

Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Phaedon Avouris
Phaedon Avouris IBM (United States)
Walter Riess
Walter Riess IBM Research - Zurich
Heike Riel
Heike Riel IBM (United States)
Heinz Schmid
Heinz Schmid IBM (United States)
S. Mantl
S. Mantl Forschungszentrum Jülich
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)

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