World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
86
Citations
37214
World Ranking
2022
National Ranking
611

Physics

D-Index
88
Citations
37138
World Ranking
2360
National Ranking
1188

Research.com Recognitions

  • 2009 - Member of the National Academy of Engineering For leadership in microelectronics and nanoelectronics through research, innovative education, and unique applications of cyberinfrastructure.
  • 2006 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2000 - Fellow of American Physical Society (APS) Citation For insights into the physics of carrier transport in small semiconductor devices and the development of simple, conceptual models for nanoscale transistors
  • 1994 - IEEE Fellow For contributions to heterostructure devices physics and simulation.

Overview

Mark Lundstrom is affiliated with Purdue University West Lafayette in the United States. Their research spans multiple fields primarily within engineering and materials science, with a focus on electrical and electronic engineering as well as materials chemistry. The subfields they work in also include biomedical engineering and civil and structural engineering.

The scientist's work concentrates on several main topics, including semiconductor materials and devices, advancements in semiconductor devices and circuit design, nanowire synthesis and applications, thin-film transistor technologies, electronic and structural properties of oxides, thermal properties of materials, and advanced thermoelectric materials and devices.

Mark Lundstrom has published research extensively, with notable recent papers including:

  • "Moore's law: The journey ahead," 2022, Science
  • "Unification of nonequilibrium molecular dynamics and the mode-resolved phonon Boltzmann equation for thermal transport simulations," 2020, Physical Review B
  • "A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current," 2022, IEEE Electron Device Letters
  • "Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current," 2022, ACS Nano
  • "Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In₂O₃ Thin-Film Transistors," 2024, IEEE Transactions on Electron Devices

The frequent coauthors who have collaborated with this scientist include Zhuocheng Zhang, Zehao Lin, Vahid Askarpour, Zhongxia Shang, and Mengwei Si.

The venues where they commonly publish include arXiv (Cornell University), Science, Physical Review B, IEEE Electron Device Letters, and ACS Nano.

In addition to research papers, Mark Lundstrom has contributed to the academic literature through book publications. Two books published by World Scientific are titled "Transistors!" (2022) and "Essential Semiconductor Physics" (2025).

Throughout their career, Mark Lundstrom has been recognized by various professional organizations. They became a Fellow of the IEEE in 1994 for contributions to heterostructure device physics and simulation. In 2000, they were named a Fellow of the American Physical Society for work on the physics of carrier transport in small semiconductor devices and for developing conceptual models for nanoscale transistors. In 2006, they were awarded Fellow status in the American Association for the Advancement of Science. In 2009, they were named a Member of the National Academy of Engineering for leadership in microelectronics and nanoelectronics through research, innovative education, and applications of cyberinfrastructure.

Best Publications

  • Ballistic carbon nanotube field-effect transistors

    Ali Javey;Jing Guo;Qian Wang;Mark Lundstrom

  • Fundamentals of carrier transport

    Mark Lundstrom

  • High-κ dielectrics for advanced carbon- nanotube transistors and logic gates

    Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang

  • Sub-10 nm carbon nanotube transistor.

    Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski

  • Theory of ballistic nanotransistors

    A. Rahman;Jing Guo;S. Datta;M.S. Lundstrom

  • High-field quasiballistic transport in short carbon nanotubes.

    Ali Javey;Jing Guo;Magnus Paulsson;Qian Wang

  • Elementary scattering theory of the Si MOSFET

    M. Lundstrom

  • Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Essential physics of carrier transport in nanoscale MOSFETs

    M. Lundstrom;Z. Ren

  • Moore's Law Forever?

    Mark Lundstrom

  • Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

    Zhe Luo;Jesse Maassen;Yexin Deng;Yuchen Du

  • Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches

    R. Venugopal;Z. Ren;S. Datta;M. S. Lundstrom

  • Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

    S.O. Koswatta;M.S. Lundstrom;D.E. Nikonov

  • Nanoscale Transistors: Device Physics, Modeling and Simulation

    Mark Lundstrom;Jing Guo

  • A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

    Jing Wang;Eric Polizzi;Mark S Lundstrom

  • Modeling of Nanoscale Devices

    M.P. Anantram;M.S. Lundstrom;D.E. Nikonov

  • A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors

    Jing Guo;S. Datta;M. Lundstrom

  • Performance projections for ballistic carbon nanotube field-effect transistors

    Jing Guo;Mark S Lundstrom;Supriyo Datta

  • Essential physics of carrier transport in nanoscale MOSFETs

    M. Lundstrom;Zhibin Ren;S. Datta

Frequent Co-Authors

Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Dmitri E. Nikonov
Dmitri E. Nikonov Intel (United States)
Tony Low
Tony Low University of Minnesota
Ali Javey
Ali Javey University of California, Berkeley
Rakesh Agrawal
Rakesh Agrawal Purdue University West Lafayette
Jerry M. Woodall
Jerry M. Woodall University of California, Davis

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