World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
86
Citations
37214
World Ranking
2020
National Ranking
609

Physics

D-Index
88
Citations
37138
World Ranking
2360
National Ranking
1188

Mark Lundstrom publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mark Lundstrom sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 672 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Mark Lundstrom D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mark Lundstrom sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 86 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2009 - Member of the National Academy of Engineering For leadership in microelectronics and nanoelectronics through research, innovative education, and unique applications of cyberinfrastructure.
  • 2006 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2000 - Fellow of American Physical Society (APS) Citation For insights into the physics of carrier transport in small semiconductor devices and the development of simple, conceptual models for nanoscale transistors
  • 1994 - IEEE Fellow For contributions to heterostructure devices physics and simulation.

Overview

Mark Lundstrom is affiliated with Purdue University West Lafayette in the United States. Their research spans multiple fields primarily within engineering and materials science, with a focus on electrical and electronic engineering as well as materials chemistry. The subfields they work in also include biomedical engineering and civil and structural engineering.

The scientist's work concentrates on several main topics, including semiconductor materials and devices, advancements in semiconductor devices and circuit design, nanowire synthesis and applications, thin-film transistor technologies, electronic and structural properties of oxides, thermal properties of materials, and advanced thermoelectric materials and devices.

Mark Lundstrom has published research extensively, with notable recent papers including:

  • "Moore's law: The journey ahead," 2022, Science
  • "Unification of nonequilibrium molecular dynamics and the mode-resolved phonon Boltzmann equation for thermal transport simulations," 2020, Physical Review B
  • "A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current," 2022, IEEE Electron Device Letters
  • "Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current," 2022, ACS Nano
  • "Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In₂O₃ Thin-Film Transistors," 2024, IEEE Transactions on Electron Devices

The frequent coauthors who have collaborated with this scientist include Zhuocheng Zhang, Zehao Lin, Vahid Askarpour, Zhongxia Shang, and Mengwei Si.

The venues where they commonly publish include arXiv (Cornell University), Science, Physical Review B, IEEE Electron Device Letters, and ACS Nano.

In addition to research papers, Mark Lundstrom has contributed to the academic literature through book publications. Two books published by World Scientific are titled "Transistors!" (2022) and "Essential Semiconductor Physics" (2025).

Throughout their career, Mark Lundstrom has been recognized by various professional organizations. They became a Fellow of the IEEE in 1994 for contributions to heterostructure device physics and simulation. In 2000, they were named a Fellow of the American Physical Society for work on the physics of carrier transport in small semiconductor devices and for developing conceptual models for nanoscale transistors. In 2006, they were awarded Fellow status in the American Association for the Advancement of Science. In 2009, they were named a Member of the National Academy of Engineering for leadership in microelectronics and nanoelectronics through research, innovative education, and applications of cyberinfrastructure.

Best Publications

  • Ballistic carbon nanotube field-effect transistors

    Ali Javey;Jing Guo;Qian Wang;Mark Lundstrom

  • Fundamentals of carrier transport

    Mark Lundstrom

  • High-κ dielectrics for advanced carbon- nanotube transistors and logic gates

    Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang

  • Sub-10 nm carbon nanotube transistor.

    Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski

  • Theory of ballistic nanotransistors

    A. Rahman;Jing Guo;S. Datta;M.S. Lundstrom

  • High-field quasiballistic transport in short carbon nanotubes.

    Ali Javey;Jing Guo;Magnus Paulsson;Qian Wang

  • Elementary scattering theory of the Si MOSFET

    M. Lundstrom

  • Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Essential physics of carrier transport in nanoscale MOSFETs

    M. Lundstrom;Z. Ren

  • Moore's Law Forever?

    Mark Lundstrom

  • Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

    Zhe Luo;Jesse Maassen;Yexin Deng;Yuchen Du

  • Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches

    R. Venugopal;Z. Ren;S. Datta;M. S. Lundstrom

  • Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

    S.O. Koswatta;M.S. Lundstrom;D.E. Nikonov

  • Nanoscale Transistors: Device Physics, Modeling and Simulation

    Mark Lundstrom;Jing Guo

  • A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

    Jing Wang;Eric Polizzi;Mark S Lundstrom

  • Modeling of Nanoscale Devices

    M.P. Anantram;M.S. Lundstrom;D.E. Nikonov

  • A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors

    Jing Guo;S. Datta;M. Lundstrom

  • Performance projections for ballistic carbon nanotube field-effect transistors

    Jing Guo;Mark S Lundstrom;Supriyo Datta

  • Essential physics of carrier transport in nanoscale MOSFETs

    M. Lundstrom;Zhibin Ren;S. Datta

Frequent Co-Authors

Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Dmitri E. Nikonov
Dmitri E. Nikonov Intel (United States)
Tony Low
Tony Low University of Minnesota
Ali Javey
Ali Javey University of California, Berkeley
Rakesh Agrawal
Rakesh Agrawal Purdue University West Lafayette
Jerry M. Woodall
Jerry M. Woodall University of California, Davis

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