2009 - Member of the National Academy of Engineering For leadership in microelectronics and nanoelectronics through research, innovative education, and unique applications of cyberinfrastructure.
2006 - Fellow of the American Association for the Advancement of Science (AAAS)
2000 - Fellow of American Physical Society (APS) Citation For insights into the physics of carrier transport in small semiconductor devices and the development of simple, conceptual models for nanoscale transistors
1994 - IEEE Fellow For contributions to heterostructure devices physics and simulation.
Mark Lundstrom spends much of his time researching Condensed matter physics, Optoelectronics, Transistor, Field-effect transistor and Nanotechnology. Mark Lundstrom interconnects Quantum capacitance, Semiconductor and MOSFET in the investigation of issues within Condensed matter physics. His Optoelectronics research incorporates themes from Carbon nanotube field-effect transistor, Bipolar junction transistor, Carbon nanotube and Leakage.
He combines subjects such as Capacitance, Planar and Silicon with his study of Transistor. His work is dedicated to discovering how Field-effect transistor, Ballistic conduction are connected with Nanoelectronics, Nanowire, Graphene and Quantum and other disciplines. His work on Nanoscopic scale as part of general Nanotechnology research is frequently linked to National Nanotechnology Initiative, thereby connecting diverse disciplines of science.
Mark Lundstrom focuses on Nanotechnology, Nanoelectronics, Nanoelectromechanical systems, Nanophotonics and Outreach. His work investigates the relationship between Nanotechnology and topics such as Transistor that intersect with problems in Nanowire. The study incorporates disciplines such as Nano- and MOSFET in addition to Nanoelectronics.
His MOSFET research includes elements of Electronic engineering and Ballistic conduction. His work carried out in the field of Field-effect transistor brings together such families of science as Optoelectronics, Condensed matter physics and Carbon nanotube. Mark Lundstrom focuses mostly in the field of Optoelectronics, narrowing it down to matters related to Bipolar junction transistor and, in some cases, Heterojunction.
His primary areas of investigation include Nanotechnology, Nanoelectronics, Nanoelectromechanical systems, Nanophotonics and Nano-. His studies deal with areas such as Condensed matter physics and Thermoelectric effect as well as Nanotechnology. Mark Lundstrom has included themes like Scattering, Virtual source, Semiconductor, Ballistic conduction and Transistor in his Nanoelectronics study.
His Transistor research incorporates elements of Optoelectronics and Nanoscopic scale. His Optoelectronics study combines topics in areas such as Spectroscopy and Thin film. His biological study deals with issues like Solar cell, which deal with fields such as Optics.
The scientist’s investigation covers issues in Optoelectronics, Condensed matter physics, Thermoelectric effect, Thermal conductivity and Scattering. His Optoelectronics research includes themes of Thin film and Transistor. Many of his research projects under Transistor are closely connected to Thermal velocity with Thermal velocity, tying the diverse disciplines of science together.
The Condensed matter physics study combines topics in areas such as Nanotechnology and Semiconductor. His Thermal conductivity research incorporates themes from Phonon, Statistical physics and Boltzmann equation. Electronic engineering is closely connected to Nanoelectronics in his research, which is encompassed under the umbrella topic of Ballistic conduction.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Ballistic carbon nanotube field-effect transistors
Ali Javey;Jing Guo;Qian Wang;Mark Lundstrom.
Nature (2003)
Fundamentals of carrier transport
Mark Lundstrom.
(1990)
High-κ dielectrics for advanced carbon- nanotube transistors and logic gates
Ali Javey;Hyoungsub Kim;Markus Brink;Qian Wang.
Nature Materials (2002)
Sub-10 nm carbon nanotube transistor.
Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski.
Nano Letters (2012)
Theory of ballistic nanotransistors
A. Rahman;Jing Guo;S. Datta;M.S. Lundstrom.
IEEE Transactions on Electron Devices (2003)
High-field quasiballistic transport in short carbon nanotubes.
Ali Javey;Jing Guo;Magnus Paulsson;Qian Wang.
Physical Review Letters (2004)
Elementary scattering theory of the Si MOSFET
M. Lundstrom.
IEEE Electron Device Letters (1997)
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang.
Nano Letters (2004)
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang.
Nano Letters (2004)
Essential physics of carrier transport in nanoscale MOSFETs
M. Lundstrom;Z. Ren.
IEEE Transactions on Electron Devices (2002)
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