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Michael R. Melloch

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 70 940 898 396 365 510 15814
Materials Science 68 4895 4737 1293 1213 502 15566

Michael R. Melloch publications per year

The chart shows the history of publications by Michael R. Melloch between 1980 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Michael R. Melloch published across 42 years, from 1980 to 2021, averaging 13.5 papers a year. Output peaked at 46 publications in 1998. 2 of the 566 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1980 to 2021. Vertical axis: number of publications, 0 to 46. Peak 46 publications in 1998. 1980: 1 publication 1981: 5 publications 1982: 4 publications 1983: 7 publications 1984: 2 publications 1985: 2 publications 1986: 12 publications 1987: 12 publications 1988: 11 publications 1989: 15 publications 1990: 18 publications 1991: 31 publications 1992: 41 publications 1993: 40 publications 1994: 26 publications 1995: 32 publications 1996: 39 publications 1997: 45 publications 1998: 46 publications 1999: 29 publications 2000: 37 publications 2001: 33 publications 2002: 13 publications 2003: 19 publications 2004: 11 publications 2005: 7 publications 2006: 2 publications 2007: 2 publications 2008: 4 publications 2009: 6 publications 2010: 1 publication 2011: 3 publications 2012: 2 publications 2013: 2 publications 2014: 1 publication 2015: 0 publications 2016: 2 publications 2017: 0 publications 2018: 1 publication 2019: 0 publications 2020: 0 publications 2021: 2 publications
1980 2021

566 publications in total across all disciplines

View publications per year as a table
Michael R. Melloch: publications per year, 1980 to 2021
Year Publications
1980 1
1981 5
1982 4
1983 7
1984 2
1985 2
1986 12
1987 12
1988 11
1989 15
1990 18
1991 31
1992 41
1993 40
1994 26
1995 32
1996 39
1997 45
1998 46
1999 29
2000 37
2001 33
2002 13
2003 19
2004 11
2005 7
2006 2
2007 2
2008 4
2009 6
2010 1
2011 3
2012 2
2013 2
2014 1
2015 0
2016 2
2017 0
2018 1
2019 0
2020 0
2021 2
Total 566
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Michael R. Melloch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael R. Melloch sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 494–513 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 510 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103 510
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Michael R. Melloch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael R. Melloch sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 70 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57 70
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 1999 - IEEE Fellow For contributions to silicon carbide device technology.
  • 1996 - Fellow of American Physical Society (APS) Citation For innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices which have led to new materials, novel devices, and important advances in the physics of nanostructures

Overview

Michael R. Melloch is affiliated with Purdue University West Lafayette in the United States. Their research focuses predominantly on materials science, with specialized work in materials chemistry, electronic, optical and magnetic materials, biomedical engineering, polymers and plastics, as well as electrical and electronic engineering.

The scientist has contributed extensively to several main topics within their field, including:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and structural properties of oxides
  • Advanced sensor and energy harvesting materials
  • Supercapacitor materials and fabrication
  • Conducting polymers and applications
  • Semiconductor materials and devices

Melloch's publication record includes multiple papers in prominent journals. Recent publications include:

  • "High-Quality Si-Doped β-Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition," published in 2020 in physica status solidi (b)
  • "Monolithic Fabrication of Metal-Free On-Paper Self-Charging Power Systems," published in 2024 in Advanced Functional Materials
  • "Electrical and Optical Properties of a Cu2O/β-Ga2O3 pn-Junction," published in 2024 in physica status solidi (a)
  • "Reverse-Bias Electroluminescence in Er-Doped β-Ga2O3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition," published in 2021 in physica status solidi (a)

Their frequent coauthors include:

  • Mattias Hammar
  • Anders Hallén
  • S. I. Khartsev
  • J. Purāns
  • Yingchun Su

Melloch has often published in the venues:

  • physica status solidi (a)
  • physica status solidi (b)
  • Advanced Functional Materials

In recognition of contributions to semiconductor device technology, Michael R. Melloch was awarded the IEEE Fellow title in 1999, cited for work on silicon carbide device technology. They were also named a Fellow of the American Physical Society in 1996 for innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices that led to new materials and developments in nanostructure physics.

Best Publications

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

    A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky

  • High-voltage double-implanted power MOSFET's in 6H-SiC

    J.N. Shenoy;J.A. Cooper;M.R. Melloch

  • The Kondo effect in an artificial quantum dot molecule.

    H. Jeong;A. M. Chang;M. R. Melloch

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

    M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren

  • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

    K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch

  • Novel interference effects between parallel quantum wells.

    S. Datta;M. R. Melloch;S. Bandyopadhyay;R. Noren

  • Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes

    M. S. Carpenter;Michael R. Melloch;M. S. Lundstrom;S. P. Tobin

  • Transition between quantum states in a parallel-coupled double quantum dot.

    J. C. Chen;A. M. Chang;M. R. Melloch

  • Carrier lifetime versus anneal in low temperature growth GaAs

    E. S. Harmon;M. R. Melloch;J. M. Woodall;D. D. Nolte

  • Subsurface charge accumulation imaging of a quantum Hall liquid

    S. H. Tessmer;S. H. Tessmer;P. I. Glicofridis;R. C. Ashoori;L. S. Levitov

  • Characterization and optimization of the SiO 2 /SiC metal-oxide semiconductor interface

    J. N. Shenoy;G. L. Chindalore;M. R. Melloch;J. A. Cooper

  • Photorefractive quantum wells: Transverse Franz-Keldysh geometry

    Q. N. Wang;R. M. Brubaker;D. D. Nolte;M. R. Melloch

  • High-voltage accumulation-layer UMOSFET's in 4H-SiC

    Unknown

  • Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

    A. C. Warren;N. Katzenellenbogen;D. Grischkowsky;J. M. Woodall

  • 2.6 kV 4H-SiC lateral DMOSFETs

    J. Spitz;M.R. Melloch;J.A. Cooper;M.A. Capano

  • Surface roughening in ion implanted 4H-silicon carbide

    M. A. Capano;S. Ryu;J. A. Cooper;N. Nordell

  • Low-Temperature Grown III-V Materials

    M. R. Melloch;J. M. Woodall;E. S. Harmon;N. Otsuka

  • Schottky barrier formation on (NH4)2S‐treated n‐ and p‐type (100)GaAs

    M. S. Carpenter;M. R. Melloch;T. E. Dungan

  • Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires.

    Fabio Altomare;Albert M. Chang;Michael R. Melloch;Yuguang Hong

  • Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

    Michael A. Capano;James A. Cooper;M.R. Melloch;Adam W. Saxler

  • Proposed structure for large quantum interference effects

    S. Datta;Michael R Melloch;S. Bandyopadhyay;Mark S Lundstrom

  • Imaging of tumor necroses using full-frame optical coherence imaging

    Ping Yu;L. L. Peng;M. Mustata;David D. Nolte

Frequent Co-Authors

Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
J.A. Cooper
J.A. Cooper Purdue University West Lafayette
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
David B. Janes
David B. Janes Purdue University West Lafayette
Andrew M. Weiner
Andrew M. Weiner Purdue University West Lafayette
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
Scott T. Sheppard
Scott T. Sheppard Cree
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Supriyo Datta
Supriyo Datta Purdue University West Lafayette

External Links

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