D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 60 Citations 11,698 378 World Ranking 974 National Ranking 451
Materials Science D-index 60 Citations 11,791 390 World Ranking 4373 National Ranking 1251

Research.com Recognitions

Awards & Achievements

1999 - IEEE Fellow For contributions to silicon carbide device technology.

1996 - Fellow of American Physical Society (APS) Citation For innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices which have led to new materials, novel devices, and important advances in the physics of nanostructures

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Optics

Michael R. Melloch focuses on Optoelectronics, Condensed matter physics, Analytical chemistry, Molecular beam epitaxy and Wide-bandgap semiconductor. His research is interdisciplinary, bridging the disciplines of Transistor and Optoelectronics. His research in Condensed matter physics intersects with topics in Quantum well, Quantum dot, Quantum Hall effect and Electrical resistivity and conductivity.

His Analytical chemistry study combines topics in areas such as Doping, Silicon carbide, Annealing, Mineralogy and Arsenic. His study with Molecular beam epitaxy involves better knowledge in Epitaxy. His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Electron mobility and Power MOSFET, MOSFET.

His most cited work include:

  • Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy (384 citations)
  • Status and prospects for SiC power MOSFETs (327 citations)
  • High-voltage double-implanted power MOSFET's in 6H-SiC (245 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Condensed matter physics, Optics, Photorefractive effect and Molecular beam epitaxy. His research investigates the connection between Optoelectronics and topics such as Epitaxy that intersect with issues in Molecular beam. Michael R. Melloch interconnects Electron, Quantum Hall effect, Quantum point contact and Coulomb blockade in the investigation of issues within Condensed matter physics.

His work deals with themes such as Quantum well, Grating and Electric field, which intersect with Photorefractive effect. His studies in Molecular beam epitaxy integrate themes in fields like Crystallography, Thin film, Annealing, Mineralogy and Arsenic. Michael R. Melloch combines subjects such as Transistor, Bipolar junction transistor, Electron mobility and Analytical chemistry with his study of Doping.

He most often published in these fields:

  • Optoelectronics (50.98%)
  • Condensed matter physics (23.53%)
  • Optics (20.26%)

What were the highlights of his more recent work (between 2000-2021)?

  • Condensed matter physics (23.53%)
  • Optics (20.26%)
  • Optoelectronics (50.98%)

In recent papers he was focusing on the following fields of study:

Condensed matter physics, Optics, Optoelectronics, Photorefractive effect and Holography are his primary areas of study. His Condensed matter physics research incorporates themes from Quantum point contact, Quantum mechanics, Magnetic field, Kondo effect and Coulomb blockade. His work carried out in the field of Optoelectronics brings together such families of science as Electronic engineering and Epitaxy.

His work investigates the relationship between Epitaxy and topics such as Buffer that intersect with problems in Heterojunction and Layer. His Photorefractive effect research integrates issues from Field, Electric field, Quantum well, Grating and Nonlinear system. His biological study spans a wide range of topics, including Speckle pattern, Diffraction and Microscopy.

Between 2000 and 2021, his most popular works were:

  • Status and prospects for SiC power MOSFETs (327 citations)
  • The Kondo effect in an artificial quantum dot molecule. (208 citations)
  • SiC power Schottky and PiN diodes (186 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Optics

His primary scientific interests are in Optoelectronics, Optics, Photorefractive effect, Holography and Condensed matter physics. His Optoelectronics study incorporates themes from Electronic engineering and Silicon carbide. His Photorefractive effect study combines topics from a wide range of disciplines, such as Homodyne detection, Quantum well, Nonlinear system and Holographic interferometry, Interferometry.

The Holography study combines topics in areas such as Optical coherence tomography and Speckle pattern. He has included themes like Quantum mechanics and Phase in his Condensed matter physics study. His Wide-bandgap semiconductor research incorporates elements of Electrical engineering, Engineering physics and Power MOSFET.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky.
Applied Physics Letters (1990)

569 Citations

Status and prospects for SiC power MOSFETs

J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal.
IEEE Transactions on Electron Devices (2002)

499 Citations

High-voltage double-implanted power MOSFET's in 6H-SiC

J.N. Shenoy;J.A. Cooper;M.R. Melloch.
IEEE Electron Device Letters (1997)

385 Citations

The Kondo effect in an artificial quantum dot molecule.

H. Jeong;A. M. Chang;M. R. Melloch.
Science (2001)

315 Citations

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren.
Applied Physics Letters (1990)

299 Citations

Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch.
IEEE Transactions on Electron Devices (1998)

286 Citations

SiC power Schottky and PiN diodes

R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow.
IEEE Transactions on Electron Devices (2002)

281 Citations

Novel interference effects between parallel quantum wells.

S. Datta;M. R. Melloch;S. Bandyopadhyay;R. Noren.
Physical Review Letters (1985)

274 Citations

Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes

M. S. Carpenter;Michael R. Melloch;M. S. Lundstrom;S. P. Tobin.
Applied Physics Letters (1988)

251 Citations

Subsurface charge accumulation imaging of a quantum Hall liquid

S. H. Tessmer;S. H. Tessmer;P. I. Glicofridis;R. C. Ashoori;L. S. Levitov.
Nature (1998)

237 Citations

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