1999 - IEEE Fellow For contributions to silicon carbide device technology.
1996 - Fellow of American Physical Society (APS) Citation For innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices which have led to new materials, novel devices, and important advances in the physics of nanostructures
Michael R. Melloch focuses on Optoelectronics, Condensed matter physics, Analytical chemistry, Molecular beam epitaxy and Wide-bandgap semiconductor. His research is interdisciplinary, bridging the disciplines of Transistor and Optoelectronics. His research in Condensed matter physics intersects with topics in Quantum well, Quantum dot, Quantum Hall effect and Electrical resistivity and conductivity.
His Analytical chemistry study combines topics in areas such as Doping, Silicon carbide, Annealing, Mineralogy and Arsenic. His study with Molecular beam epitaxy involves better knowledge in Epitaxy. His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Electron mobility and Power MOSFET, MOSFET.
His primary areas of investigation include Optoelectronics, Condensed matter physics, Optics, Photorefractive effect and Molecular beam epitaxy. His research investigates the connection between Optoelectronics and topics such as Epitaxy that intersect with issues in Molecular beam. Michael R. Melloch interconnects Electron, Quantum Hall effect, Quantum point contact and Coulomb blockade in the investigation of issues within Condensed matter physics.
His work deals with themes such as Quantum well, Grating and Electric field, which intersect with Photorefractive effect. His studies in Molecular beam epitaxy integrate themes in fields like Crystallography, Thin film, Annealing, Mineralogy and Arsenic. Michael R. Melloch combines subjects such as Transistor, Bipolar junction transistor, Electron mobility and Analytical chemistry with his study of Doping.
Condensed matter physics, Optics, Optoelectronics, Photorefractive effect and Holography are his primary areas of study. His Condensed matter physics research incorporates themes from Quantum point contact, Quantum mechanics, Magnetic field, Kondo effect and Coulomb blockade. His work carried out in the field of Optoelectronics brings together such families of science as Electronic engineering and Epitaxy.
His work investigates the relationship between Epitaxy and topics such as Buffer that intersect with problems in Heterojunction and Layer. His Photorefractive effect research integrates issues from Field, Electric field, Quantum well, Grating and Nonlinear system. His biological study spans a wide range of topics, including Speckle pattern, Diffraction and Microscopy.
His primary scientific interests are in Optoelectronics, Optics, Photorefractive effect, Holography and Condensed matter physics. His Optoelectronics study incorporates themes from Electronic engineering and Silicon carbide. His Photorefractive effect study combines topics from a wide range of disciplines, such as Homodyne detection, Quantum well, Nonlinear system and Holographic interferometry, Interferometry.
The Holography study combines topics in areas such as Optical coherence tomography and Speckle pattern. He has included themes like Quantum mechanics and Phase in his Condensed matter physics study. His Wide-bandgap semiconductor research incorporates elements of Electrical engineering, Engineering physics and Power MOSFET.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky.
Applied Physics Letters (1990)
Status and prospects for SiC power MOSFETs
J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal.
IEEE Transactions on Electron Devices (2002)
High-voltage double-implanted power MOSFET's in 6H-SiC
J.N. Shenoy;J.A. Cooper;M.R. Melloch.
IEEE Electron Device Letters (1997)
The Kondo effect in an artificial quantum dot molecule.
H. Jeong;A. M. Chang;M. R. Melloch.
Science (2001)
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren.
Applied Physics Letters (1990)
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch.
IEEE Transactions on Electron Devices (1998)
SiC power Schottky and PiN diodes
R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow.
IEEE Transactions on Electron Devices (2002)
Novel interference effects between parallel quantum wells.
S. Datta;M. R. Melloch;S. Bandyopadhyay;R. Noren.
Physical Review Letters (1985)
Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes
M. S. Carpenter;Michael R. Melloch;M. S. Lundstrom;S. P. Tobin.
Applied Physics Letters (1988)
Subsurface charge accumulation imaging of a quantum Hall liquid
S. H. Tessmer;S. H. Tessmer;P. I. Glicofridis;R. C. Ashoori;L. S. Levitov.
Nature (1998)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
University of California, Davis
Purdue University West Lafayette
Purdue University West Lafayette
Imperial College London
Purdue University West Lafayette
Purdue University West Lafayette
Purdue University West Lafayette
Wolfspeed, Inc.
Wolfspeed, Inc.
Purdue University West Lafayette
Lancaster University
Dalarna University
University of Milan
Newcastle University
Colorado State University
University of Alberta
ETH Zurich
University of Copenhagen
Yenepoya University
University College London
Hebrew University of Jerusalem
University of Massachusetts Amherst
Eötvös Loránd University
Pennsylvania State University
National Institutes of Health
University of Southern California