World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
15814
World Ranking
940
National Ranking
395

Materials Science

D-Index
68
Citations
15566
World Ranking
4897
National Ranking
1295

Research.com Recognitions

  • 1999 - IEEE Fellow For contributions to silicon carbide device technology.
  • 1996 - Fellow of American Physical Society (APS) Citation For innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices which have led to new materials, novel devices, and important advances in the physics of nanostructures

Overview

Michael R. Melloch is affiliated with Purdue University West Lafayette in the United States. Their research focuses predominantly on materials science, with specialized work in materials chemistry, electronic, optical and magnetic materials, biomedical engineering, polymers and plastics, as well as electrical and electronic engineering.

The scientist has contributed extensively to several main topics within their field, including:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and structural properties of oxides
  • Advanced sensor and energy harvesting materials
  • Supercapacitor materials and fabrication
  • Conducting polymers and applications
  • Semiconductor materials and devices

Melloch's publication record includes multiple papers in prominent journals. Recent publications include:

  • "High-Quality Si-Doped β-Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition," published in 2020 in physica status solidi (b)
  • "Monolithic Fabrication of Metal-Free On-Paper Self-Charging Power Systems," published in 2024 in Advanced Functional Materials
  • "Electrical and Optical Properties of a Cu2O/β-Ga2O3 pn-Junction," published in 2024 in physica status solidi (a)
  • "Reverse-Bias Electroluminescence in Er-Doped β-Ga2O3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition," published in 2021 in physica status solidi (a)

Their frequent coauthors include:

  • Mattias Hammar
  • Anders Hallén
  • S. I. Khartsev
  • J. Purāns
  • Yingchun Su

Melloch has often published in the venues:

  • physica status solidi (a)
  • physica status solidi (b)
  • Advanced Functional Materials

In recognition of contributions to semiconductor device technology, Michael R. Melloch was awarded the IEEE Fellow title in 1999, cited for work on silicon carbide device technology. They were also named a Fellow of the American Physical Society in 1996 for innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices that led to new materials and developments in nanostructure physics.

Best Publications

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

    A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky

  • High-voltage double-implanted power MOSFET's in 6H-SiC

    J.N. Shenoy;J.A. Cooper;M.R. Melloch

  • The Kondo effect in an artificial quantum dot molecule.

    H. Jeong;A. M. Chang;M. R. Melloch

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

    M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren

  • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

    K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch

  • Novel interference effects between parallel quantum wells.

    S. Datta;M. R. Melloch;S. Bandyopadhyay;R. Noren

  • Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes

    M. S. Carpenter;Michael R. Melloch;M. S. Lundstrom;S. P. Tobin

  • Transition between quantum states in a parallel-coupled double quantum dot.

    J. C. Chen;A. M. Chang;M. R. Melloch

  • Carrier lifetime versus anneal in low temperature growth GaAs

    E. S. Harmon;M. R. Melloch;J. M. Woodall;D. D. Nolte

  • Subsurface charge accumulation imaging of a quantum Hall liquid

    S. H. Tessmer;S. H. Tessmer;P. I. Glicofridis;R. C. Ashoori;L. S. Levitov

  • Characterization and optimization of the SiO 2 /SiC metal-oxide semiconductor interface

    J. N. Shenoy;G. L. Chindalore;M. R. Melloch;J. A. Cooper

  • Photorefractive quantum wells: Transverse Franz-Keldysh geometry

    Q. N. Wang;R. M. Brubaker;D. D. Nolte;M. R. Melloch

  • High-voltage accumulation-layer UMOSFET's in 4H-SiC

    Unknown

  • Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

    A. C. Warren;N. Katzenellenbogen;D. Grischkowsky;J. M. Woodall

  • 2.6 kV 4H-SiC lateral DMOSFETs

    J. Spitz;M.R. Melloch;J.A. Cooper;M.A. Capano

  • Surface roughening in ion implanted 4H-silicon carbide

    M. A. Capano;S. Ryu;J. A. Cooper;N. Nordell

  • Low-Temperature Grown III-V Materials

    M. R. Melloch;J. M. Woodall;E. S. Harmon;N. Otsuka

  • Schottky barrier formation on (NH4)2S‐treated n‐ and p‐type (100)GaAs

    M. S. Carpenter;M. R. Melloch;T. E. Dungan

  • Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires.

    Fabio Altomare;Albert M. Chang;Michael R. Melloch;Yuguang Hong

  • Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

    Michael A. Capano;James A. Cooper;M.R. Melloch;Adam W. Saxler

  • Proposed structure for large quantum interference effects

    S. Datta;Michael R Melloch;S. Bandyopadhyay;Mark S Lundstrom

  • Imaging of tumor necroses using full-frame optical coherence imaging

    Ping Yu;L. L. Peng;M. Mustata;David D. Nolte

Frequent Co-Authors

Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
J.A. Cooper
J.A. Cooper Purdue University West Lafayette
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
David B. Janes
David B. Janes Purdue University West Lafayette
Andrew M. Weiner
Andrew M. Weiner Purdue University West Lafayette
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Supriyo Datta
Supriyo Datta Purdue University West Lafayette

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