World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
15814
World Ranking
940
National Ranking
396

Materials Science

D-Index
68
Citations
15566
World Ranking
4895
National Ranking
1293

Michael R. Melloch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael R. Melloch sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 510 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Michael R. Melloch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael R. Melloch sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1999 - IEEE Fellow For contributions to silicon carbide device technology.
  • 1996 - Fellow of American Physical Society (APS) Citation For innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices which have led to new materials, novel devices, and important advances in the physics of nanostructures

Overview

Michael R. Melloch is affiliated with Purdue University West Lafayette in the United States. Their research focuses predominantly on materials science, with specialized work in materials chemistry, electronic, optical and magnetic materials, biomedical engineering, polymers and plastics, as well as electrical and electronic engineering.

The scientist has contributed extensively to several main topics within their field, including:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and structural properties of oxides
  • Advanced sensor and energy harvesting materials
  • Supercapacitor materials and fabrication
  • Conducting polymers and applications
  • Semiconductor materials and devices

Melloch's publication record includes multiple papers in prominent journals. Recent publications include:

  • "High-Quality Si-Doped β-Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition," published in 2020 in physica status solidi (b)
  • "Monolithic Fabrication of Metal-Free On-Paper Self-Charging Power Systems," published in 2024 in Advanced Functional Materials
  • "Electrical and Optical Properties of a Cu2O/β-Ga2O3 pn-Junction," published in 2024 in physica status solidi (a)
  • "Reverse-Bias Electroluminescence in Er-Doped β-Ga2O3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition," published in 2021 in physica status solidi (a)

Their frequent coauthors include:

  • Mattias Hammar
  • Anders Hallén
  • S. I. Khartsev
  • J. Purāns
  • Yingchun Su

Melloch has often published in the venues:

  • physica status solidi (a)
  • physica status solidi (b)
  • Advanced Functional Materials

In recognition of contributions to semiconductor device technology, Michael R. Melloch was awarded the IEEE Fellow title in 1999, cited for work on silicon carbide device technology. They were also named a Fellow of the American Physical Society in 1996 for innovative epitaxial growth of semiconductor epilayers, quantum wells, and superlattices that led to new materials and developments in nanostructure physics.

Best Publications

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

    A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky

  • High-voltage double-implanted power MOSFET's in 6H-SiC

    J.N. Shenoy;J.A. Cooper;M.R. Melloch

  • The Kondo effect in an artificial quantum dot molecule.

    H. Jeong;A. M. Chang;M. R. Melloch

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

    M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren

  • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

    K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch

  • Novel interference effects between parallel quantum wells.

    S. Datta;M. R. Melloch;S. Bandyopadhyay;R. Noren

  • Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes

    M. S. Carpenter;Michael R. Melloch;M. S. Lundstrom;S. P. Tobin

  • Transition between quantum states in a parallel-coupled double quantum dot.

    J. C. Chen;A. M. Chang;M. R. Melloch

  • Carrier lifetime versus anneal in low temperature growth GaAs

    E. S. Harmon;M. R. Melloch;J. M. Woodall;D. D. Nolte

  • Subsurface charge accumulation imaging of a quantum Hall liquid

    S. H. Tessmer;S. H. Tessmer;P. I. Glicofridis;R. C. Ashoori;L. S. Levitov

  • Characterization and optimization of the SiO 2 /SiC metal-oxide semiconductor interface

    J. N. Shenoy;G. L. Chindalore;M. R. Melloch;J. A. Cooper

  • Photorefractive quantum wells: Transverse Franz-Keldysh geometry

    Q. N. Wang;R. M. Brubaker;D. D. Nolte;M. R. Melloch

  • High-voltage accumulation-layer UMOSFET's in 4H-SiC

    Unknown

  • Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

    A. C. Warren;N. Katzenellenbogen;D. Grischkowsky;J. M. Woodall

  • 2.6 kV 4H-SiC lateral DMOSFETs

    J. Spitz;M.R. Melloch;J.A. Cooper;M.A. Capano

  • Surface roughening in ion implanted 4H-silicon carbide

    M. A. Capano;S. Ryu;J. A. Cooper;N. Nordell

  • Low-Temperature Grown III-V Materials

    M. R. Melloch;J. M. Woodall;E. S. Harmon;N. Otsuka

  • Schottky barrier formation on (NH4)2S‐treated n‐ and p‐type (100)GaAs

    M. S. Carpenter;M. R. Melloch;T. E. Dungan

  • Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires.

    Fabio Altomare;Albert M. Chang;Michael R. Melloch;Yuguang Hong

  • Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

    Michael A. Capano;James A. Cooper;M.R. Melloch;Adam W. Saxler

  • Proposed structure for large quantum interference effects

    S. Datta;Michael R Melloch;S. Bandyopadhyay;Mark S Lundstrom

  • Imaging of tumor necroses using full-frame optical coherence imaging

    Ping Yu;L. L. Peng;M. Mustata;David D. Nolte

Frequent Co-Authors

Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
J.A. Cooper
J.A. Cooper Purdue University West Lafayette
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
David B. Janes
David B. Janes Purdue University West Lafayette
Andrew M. Weiner
Andrew M. Weiner Purdue University West Lafayette
Robert L. Gunshor
Robert L. Gunshor Purdue University West Lafayette
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Supriyo Datta
Supriyo Datta Purdue University West Lafayette

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