Sima Dimitrijev focuses on Oxide, Optoelectronics, Wide-bandgap semiconductor, Annealing and Electronic engineering. Her Oxide research is multidisciplinary, incorporating perspectives in Carbon, Silicon carbide and Electrical engineering. Sima Dimitrijev has researched Optoelectronics in several fields, including Transistor, Bipolar junction transistor, Gate oxide, MOSFET and Power semiconductor device.
Her Wide-bandgap semiconductor study combines topics in areas such as Analytical chemistry, X-ray photoelectron spectroscopy, Nanotechnology, Heterojunction and Passivation. In her study, Spectral line is strongly linked to Silicon dioxide, which falls under the umbrella field of Annealing. Sima Dimitrijev interconnects Piezoresistive effect and Nitriding in the investigation of issues within Electronic engineering.
Her scientific interests lie mostly in Optoelectronics, Silicon, Electrical engineering, Oxide and Silicon carbide. Her studies in Optoelectronics integrate themes in fields like Threshold voltage, MOSFET, Gate oxide and Capacitor. As part of the same scientific family, Sima Dimitrijev usually focuses on Gate oxide, concentrating on CMOS and intersecting with Transistor.
Her research in Silicon intersects with topics in Thin film, Wafer, Nanotechnology, Dielectric and Substrate. Her Oxide research is multidisciplinary, incorporating perspectives in Passivation, Electron mobility, Condensed matter physics and Analytical chemistry. Her Silicon carbide research incorporates elements of Annealing, Wide-bandgap semiconductor, Electronic engineering and Engineering physics.
Optoelectronics, Silicon carbide, Nanotechnology, Silicon and Capacitor are her primary areas of study. The concepts of her Optoelectronics study are interwoven with issues in Annealing and Electron. Her research investigates the connection with Silicon carbide and areas like Engineering physics which intersect with concerns in Power switching and Limit.
Her Capacitor study incorporates themes from Range, Oxide, Conduction band, Conductance and Gate oxide. Her study looks at the relationship between Oxide and fields such as Analytical chemistry, as well as how they intersect with chemical problems. Her MOSFET research is multidisciplinary, relying on both Subthreshold conduction and Electronic engineering.
Her primary scientific interests are in Silicon carbide, Optoelectronics, Nanotechnology, Piezoresistive effect and Wafer. Her Silicon carbide study integrates concerns from other disciplines, such as Silicon, Capacitance, Diode, Annealing and Engineering physics. Her study in Optoelectronics is interdisciplinary in nature, drawing from both Single crystal, Logic gate and Capacitor.
The various areas that she examines in her Capacitor study include Oxide and Conduction band. Sima Dimitrijev has researched Piezoresistive effect in several fields, including Condensed matter physics, Doping, Electronic engineering and Microelectromechanical systems. She has included themes like Thin film and Van der Pauw method in her Wafer study.
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Principles of semiconductor devices
Sima Dimitrijev.
(2005)
INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING
Hui-feng Li;Sima Dimitrijev;H. Barry Harrison;Denis Sweatman.
Applied Physics Letters (1997)
Effects of nitridation in gate oxides grown on 4H-SiC
Philippe Olivier Jamet;Sima Dimitrijev;Philip Tanner.
Journal of Applied Physics (2001)
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl.
Applied Physics Letters (2003)
Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC
Philippe Olivier Jamet;Sima Dimitrijev.
Applied Physics Letters (2001)
Understanding semiconductor devices
Sima Dimitrijev.
(2000)
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
Hoang-Phuong Phan;Dzung Viet Dao;Koichi Nakamura;Sima Dimitrijev.
IEEE/ASME Journal of Microelectromechanical Systems (2015)
Band alignment and defect states at SiC/oxide interfaces
Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl.
Journal of Physics: Condensed Matter (2004)
Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy
Hui-feng Li;Sima Dimitrijev;Denis Sweatman;H. Barry Harrison.
Journal of Applied Physics (1999)
Advances in SiC power MOSFET technology
Sima Dimitrijev;Philippe Olivier Jamet.
Microelectronics Reliability (2003)
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