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Sima Dimitrijev

Sima Dimitrijev

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
7896
World Ranking
3406
National Ranking
111

Overview

Sima Dimitrijev is affiliated with Griffith University in Australia and specializes primarily in the field of Engineering. Their research focuses extensively on Electrical and Electronic Engineering, with substantial work also conducted in Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Biomedical Engineering.

The main topics covered in Dimitrijev's research include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Electromagnetic Compatibility and Noise Suppression
  • GaN-based semiconductor devices and materials
  • Advanced DC-DC Converters

Frequent coauthors in Dimitrijev's work are:

  • Daniel Haasmann
  • Hamid Amini Moghadam
  • Peyush Pande
  • Utkarsh Jadli
  • Mayank Chaturvedi

Dimitrijev publishes predominantly in venues such as:

  • IEEE Access
  • IEEE Transactions on Electron Devices
  • Materials Science Forum
  • Electronics
  • Scientific Reports

Recent papers reflect a focus on semiconductor device performance, electrical characterization, and modeling:

  • "Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps", 2022, IEEE Transactions on Electron Devices
  • "Quantified density of performance-degrading near-interface traps in SiC MOSFETs", 2022, Scientific Reports
  • "Electrical characterization of SiC MOS capacitors: A critical review", 2020, Microelectronics Reliability
  • "Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides", 2020, IEEE Transactions on Electron Devices
  • "Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE", 2021, Electronics

Best Publications

  • Principles of semiconductor devices

    Sima Dimitrijev

  • Effects of nitridation in gate oxides grown on 4H-SiC

    Philippe Olivier Jamet;Sima Dimitrijev;Philip Tanner

  • Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

    V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

  • Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC

    Philippe Olivier Jamet;Sima Dimitrijev

  • The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

    Hoang-Phuong Phan;Dzung Viet Dao;Koichi Nakamura;Sima Dimitrijev

  • Understanding semiconductor devices

    Sima Dimitrijev

  • Band alignment and defect states at SiC/oxide interfaces

    Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

  • Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

    Xi Tang;Baikui Li;Hamid Amini Moghadam;Philip Tanner

  • Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

    Hui-feng Li;Sima Dimitrijev;Denis Sweatman;H. Barry Harrison

  • Advances in SiC power MOSFET technology

    Sima Dimitrijev;Philippe Olivier Jamet

  • Growth of 3C―SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

    Li Wang;Sima Dimitrijev;Jisheng Han;Alan Victor Iacopi

  • Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

    Kuan Yew Cheong;Sima Dimitrijev;Jisheng Han;H. Barry Harrison

  • Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

    Sima Dimitrijev;Jisheng Han;Hamid Amini Moghadam;Amirhossein Aminbeidokhti

  • High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

    Z.‐Q. Yao;H. B. Harrison;S. Dimitrijev;D. Sweatman

  • Nitridation of silicon-dioxide films grown on 6H silicon carbide

    S. Dimitrijev;Hui-Feng Li;H.B. Harrison;D. Sweatman

  • Analysis of CMOS transistor instabilities

    S. Dimitrijev;N. Stojadinović

  • Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

    Hoang Phuong Phan;Dzung Viet Dao;Philip Tanner;Li Wang

  • Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

    Reinhold Schorner;Peter Friedrichs;Dethard Peters;Dietrich Stephani

  • Analysis of subthreshold carrier transport for ultimate DGMOSFET

    Hak Kee Jung;S. Dimitrijev

  • Ultrathin Fe2O3 nanoflakes using smart chemical stripping for high performance lithium storage

    Yazhou Wang;Yazhou Wang;Jisheng Han;Xingxing Gu;Sima Dimitrijev

  • Power-switching applications beyond silicon: The status and future prospects of SiC and GaN devices

    Sima Dimitrijev;Jisheng Han;Daniel Erwin Haasmann;Hamid Amini Moghadam

  • Band alignment and defect states at SiC/oxide interfaces : Silicon carbide

    V. V. Afanas'ev;F. Ciobanu;S. Dimitrijev;G. Pensl

Frequent Co-Authors

Nam-Trung Nguyen
Nam-Trung Nguyen Griffith University
Toan Dinh
Toan Dinh University of Southern Queensland
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Jin Zou
Jin Zou University of Queensland
Reinhold H. Dauskardt
Reinhold H. Dauskardt Stanford University
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Shanqing Zhang
Shanqing Zhang Griffith University
Mikael Östling
Mikael Östling Royal Institute of Technology

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