World's Best Scientists 2026 revealed!
Sima Dimitrijev

Sima Dimitrijev

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
7896
World Ranking
3406
National Ranking
111

Sima Dimitrijev publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sima Dimitrijev sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 305 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sima Dimitrijev D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sima Dimitrijev sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sima Dimitrijev is affiliated with Griffith University in Australia and specializes primarily in the field of Engineering. Their research focuses extensively on Electrical and Electronic Engineering, with substantial work also conducted in Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Biomedical Engineering.

The main topics covered in Dimitrijev's research include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Electromagnetic Compatibility and Noise Suppression
  • GaN-based semiconductor devices and materials
  • Advanced DC-DC Converters

Frequent coauthors in Dimitrijev's work are:

  • Daniel Haasmann
  • Hamid Amini Moghadam
  • Peyush Pande
  • Utkarsh Jadli
  • Mayank Chaturvedi

Dimitrijev publishes predominantly in venues such as:

  • IEEE Access
  • IEEE Transactions on Electron Devices
  • Materials Science Forum
  • Electronics
  • Scientific Reports

Recent papers reflect a focus on semiconductor device performance, electrical characterization, and modeling:

  • "Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps", 2022, IEEE Transactions on Electron Devices
  • "Quantified density of performance-degrading near-interface traps in SiC MOSFETs", 2022, Scientific Reports
  • "Electrical characterization of SiC MOS capacitors: A critical review", 2020, Microelectronics Reliability
  • "Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides", 2020, IEEE Transactions on Electron Devices
  • "Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE", 2021, Electronics

Best Publications

  • Principles of semiconductor devices

    Sima Dimitrijev

  • Effects of nitridation in gate oxides grown on 4H-SiC

    Philippe Olivier Jamet;Sima Dimitrijev;Philip Tanner

  • Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

    V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

  • Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC

    Philippe Olivier Jamet;Sima Dimitrijev

  • The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

    Hoang-Phuong Phan;Dzung Viet Dao;Koichi Nakamura;Sima Dimitrijev

  • Understanding semiconductor devices

    Sima Dimitrijev

  • Band alignment and defect states at SiC/oxide interfaces

    Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

  • Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

    Xi Tang;Baikui Li;Hamid Amini Moghadam;Philip Tanner

  • Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

    Hui-feng Li;Sima Dimitrijev;Denis Sweatman;H. Barry Harrison

  • Advances in SiC power MOSFET technology

    Sima Dimitrijev;Philippe Olivier Jamet

  • Growth of 3C―SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

    Li Wang;Sima Dimitrijev;Jisheng Han;Alan Victor Iacopi

  • Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

    Kuan Yew Cheong;Sima Dimitrijev;Jisheng Han;H. Barry Harrison

  • Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

    Sima Dimitrijev;Jisheng Han;Hamid Amini Moghadam;Amirhossein Aminbeidokhti

  • High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

    Z.‐Q. Yao;H. B. Harrison;S. Dimitrijev;D. Sweatman

  • Nitridation of silicon-dioxide films grown on 6H silicon carbide

    S. Dimitrijev;Hui-Feng Li;H.B. Harrison;D. Sweatman

  • Analysis of CMOS transistor instabilities

    S. Dimitrijev;N. Stojadinović

  • Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

    Hoang Phuong Phan;Dzung Viet Dao;Philip Tanner;Li Wang

  • Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

    Reinhold Schorner;Peter Friedrichs;Dethard Peters;Dietrich Stephani

  • Analysis of subthreshold carrier transport for ultimate DGMOSFET

    Hak Kee Jung;S. Dimitrijev

  • Ultrathin Fe2O3 nanoflakes using smart chemical stripping for high performance lithium storage

    Yazhou Wang;Yazhou Wang;Jisheng Han;Xingxing Gu;Sima Dimitrijev

  • Power-switching applications beyond silicon: The status and future prospects of SiC and GaN devices

    Sima Dimitrijev;Jisheng Han;Daniel Erwin Haasmann;Hamid Amini Moghadam

  • Band alignment and defect states at SiC/oxide interfaces : Silicon carbide

    V. V. Afanas'ev;F. Ciobanu;S. Dimitrijev;G. Pensl

Frequent Co-Authors

Dzung Viet Dao
Dzung Viet Dao Griffith University
Hoang-Phuong Phan
Hoang-Phuong Phan University of New South Wales
Nam-Trung Nguyen
Nam-Trung Nguyen Griffith University
Toan Dinh
Toan Dinh University of Southern Queensland
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Jin Zou
Jin Zou University of Queensland
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Reinhold H. Dauskardt
Reinhold H. Dauskardt Stanford University

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