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Sima Dimitrijev

Sima Dimitrijev

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 46 3406 3266 111 109 305 7896

Sima Dimitrijev publications per year

The chart shows the history of publications by Sima Dimitrijev between 1963 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Sima Dimitrijev published across 64 years, from 1963 to 2026, averaging 5 papers a year. Output peaked at 18 publications in 2016. 3 of the 318 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1963 to 2026. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2016. 1963: 1 publication 1964: 0 publications 1965: 0 publications 1966: 0 publications 1967: 0 publications 1968: 0 publications 1969: 0 publications 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 0 publications 1982: 0 publications 1983: 1 publication 1984: 0 publications 1985: 1 publication 1986: 0 publications 1987: 4 publications 1988: 2 publications 1989: 3 publications 1990: 0 publications 1991: 5 publications 1992: 3 publications 1993: 6 publications 1994: 13 publications 1995: 14 publications 1996: 11 publications 1997: 6 publications 1998: 12 publications 1999: 14 publications 2000: 7 publications 2001: 5 publications 2002: 11 publications 2003: 10 publications 2004: 12 publications 2005: 6 publications 2006: 5 publications 2007: 2 publications 2008: 8 publications 2009: 9 publications 2010: 9 publications 2011: 5 publications 2012: 6 publications 2013: 7 publications 2014: 15 publications 2015: 17 publications 2016: 18 publications 2017: 9 publications 2018: 9 publications 2019: 12 publications 2020: 10 publications 2021: 9 publications 2022: 6 publications 2023: 9 publications 2024: 3 publications 2025: 2 publications 2026: 1 publication
1963 2026

318 publications in total across all disciplines

View publications per year as a table
Sima Dimitrijev: publications per year, 1963 to 2026
Year Publications
1963 1
1964 0
1965 0
1966 0
1967 0
1968 0
1969 0
1970 0
1971 0
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 0
1981 0
1982 0
1983 1
1984 0
1985 1
1986 0
1987 4
1988 2
1989 3
1990 0
1991 5
1992 3
1993 6
1994 13
1995 14
1996 11
1997 6
1998 12
1999 14
2000 7
2001 5
2002 11
2003 10
2004 12
2005 6
2006 5
2007 2
2008 8
2009 9
2010 9
2011 5
2012 6
2013 7
2014 15
2015 17
2016 18
2017 9
2018 9
2019 12
2020 10
2021 9
2022 6
2023 9
2024 3
2025 2
2026 1
Total 318
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Sima Dimitrijev publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sima Dimitrijev sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 294–313 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 305 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300 305
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Sima Dimitrijev D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sima Dimitrijev sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 46 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148 46
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Sima Dimitrijev is affiliated with Griffith University in Australia and specializes primarily in the field of Engineering. Their research focuses extensively on Electrical and Electronic Engineering, with substantial work also conducted in Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Biomedical Engineering.

The main topics covered in Dimitrijev's research include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Electromagnetic Compatibility and Noise Suppression
  • GaN-based semiconductor devices and materials
  • Advanced DC-DC Converters

Frequent coauthors in Dimitrijev's work are:

  • Daniel Haasmann
  • Hamid Amini Moghadam
  • Peyush Pande
  • Utkarsh Jadli
  • Mayank Chaturvedi

Dimitrijev publishes predominantly in venues such as:

  • IEEE Access
  • IEEE Transactions on Electron Devices
  • Materials Science Forum
  • Electronics
  • Scientific Reports

Recent papers reflect a focus on semiconductor device performance, electrical characterization, and modeling:

  • "Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps", 2022, IEEE Transactions on Electron Devices
  • "Quantified density of performance-degrading near-interface traps in SiC MOSFETs", 2022, Scientific Reports
  • "Electrical characterization of SiC MOS capacitors: A critical review", 2020, Microelectronics Reliability
  • "Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides", 2020, IEEE Transactions on Electron Devices
  • "Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE", 2021, Electronics

Best Publications

  • Principles of semiconductor devices

    Sima Dimitrijev

  • Effects of nitridation in gate oxides grown on 4H-SiC

    Philippe Olivier Jamet;Sima Dimitrijev;Philip Tanner

  • Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

    V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

  • Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC

    Philippe Olivier Jamet;Sima Dimitrijev

  • The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

    Hoang-Phuong Phan;Dzung Viet Dao;Koichi Nakamura;Sima Dimitrijev

  • Understanding semiconductor devices

    Sima Dimitrijev

  • Band alignment and defect states at SiC/oxide interfaces

    Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

  • Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors

    Xi Tang;Baikui Li;Hamid Amini Moghadam;Philip Tanner

  • Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

    Hui-feng Li;Sima Dimitrijev;Denis Sweatman;H. Barry Harrison

  • Advances in SiC power MOSFET technology

    Sima Dimitrijev;Philippe Olivier Jamet

  • Growth of 3C―SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C

    Li Wang;Sima Dimitrijev;Jisheng Han;Alan Victor Iacopi

  • Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O

    Kuan Yew Cheong;Sima Dimitrijev;Jisheng Han;H. Barry Harrison

  • Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

    Sima Dimitrijev;Jisheng Han;Hamid Amini Moghadam;Amirhossein Aminbeidokhti

  • High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

    Z.‐Q. Yao;H. B. Harrison;S. Dimitrijev;D. Sweatman

  • Nitridation of silicon-dioxide films grown on 6H silicon carbide

    S. Dimitrijev;Hui-Feng Li;H.B. Harrison;D. Sweatman

  • Analysis of CMOS transistor instabilities

    S. Dimitrijev;N. Stojadinović

  • Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

    Hoang Phuong Phan;Dzung Viet Dao;Philip Tanner;Li Wang

  • Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

    Reinhold Schorner;Peter Friedrichs;Dethard Peters;Dietrich Stephani

  • Analysis of subthreshold carrier transport for ultimate DGMOSFET

    Hak Kee Jung;S. Dimitrijev

  • Ultrathin Fe2O3 nanoflakes using smart chemical stripping for high performance lithium storage

    Yazhou Wang;Yazhou Wang;Jisheng Han;Xingxing Gu;Sima Dimitrijev

  • Power-switching applications beyond silicon: The status and future prospects of SiC and GaN devices

    Sima Dimitrijev;Jisheng Han;Daniel Erwin Haasmann;Hamid Amini Moghadam

  • Band alignment and defect states at SiC/oxide interfaces : Silicon carbide

    V. V. Afanas'ev;F. Ciobanu;S. Dimitrijev;G. Pensl

Frequent Co-Authors

Dzung Viet Dao
Dzung Viet Dao Griffith University
Hoang-Phuong Phan
Hoang-Phuong Phan University of New South Wales
Nam-Trung Nguyen
Nam-Trung Nguyen Griffith University
Toan Dinh
Toan Dinh University of Southern Queensland
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Jin Zou
Jin Zou University of Queensland
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Reinhold H. Dauskardt
Reinhold H. Dauskardt Stanford University

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