D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 37 Citations 5,831 270 World Ranking 3309 National Ranking 99

Overview

What is she best known for?

The fields of study she is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Sima Dimitrijev focuses on Oxide, Optoelectronics, Wide-bandgap semiconductor, Annealing and Electronic engineering. Her Oxide research is multidisciplinary, incorporating perspectives in Carbon, Silicon carbide and Electrical engineering. Sima Dimitrijev has researched Optoelectronics in several fields, including Transistor, Bipolar junction transistor, Gate oxide, MOSFET and Power semiconductor device.

Her Wide-bandgap semiconductor study combines topics in areas such as Analytical chemistry, X-ray photoelectron spectroscopy, Nanotechnology, Heterojunction and Passivation. In her study, Spectral line is strongly linked to Silicon dioxide, which falls under the umbrella field of Annealing. Sima Dimitrijev interconnects Piezoresistive effect and Nitriding in the investigation of issues within Electronic engineering.

Her most cited work include:

  • Principles of semiconductor devices (380 citations)
  • Effects of nitridation in gate oxides grown on 4H-SiC (245 citations)
  • INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING (245 citations)

What are the main themes of her work throughout her whole career to date?

Her scientific interests lie mostly in Optoelectronics, Silicon, Electrical engineering, Oxide and Silicon carbide. Her studies in Optoelectronics integrate themes in fields like Threshold voltage, MOSFET, Gate oxide and Capacitor. As part of the same scientific family, Sima Dimitrijev usually focuses on Gate oxide, concentrating on CMOS and intersecting with Transistor.

Her research in Silicon intersects with topics in Thin film, Wafer, Nanotechnology, Dielectric and Substrate. Her Oxide research is multidisciplinary, incorporating perspectives in Passivation, Electron mobility, Condensed matter physics and Analytical chemistry. Her Silicon carbide research incorporates elements of Annealing, Wide-bandgap semiconductor, Electronic engineering and Engineering physics.

She most often published in these fields:

  • Optoelectronics (44.64%)
  • Silicon (22.84%)
  • Electrical engineering (19.38%)

What were the highlights of her more recent work (between 2013-2021)?

  • Optoelectronics (44.64%)
  • Silicon carbide (17.99%)
  • Nanotechnology (17.65%)

In recent papers she was focusing on the following fields of study:

Optoelectronics, Silicon carbide, Nanotechnology, Silicon and Capacitor are her primary areas of study. The concepts of her Optoelectronics study are interwoven with issues in Annealing and Electron. Her research investigates the connection with Silicon carbide and areas like Engineering physics which intersect with concerns in Power switching and Limit.

Her Capacitor study incorporates themes from Range, Oxide, Conduction band, Conductance and Gate oxide. Her study looks at the relationship between Oxide and fields such as Analytical chemistry, as well as how they intersect with chemical problems. Her MOSFET research is multidisciplinary, relying on both Subthreshold conduction and Electronic engineering.

Between 2013 and 2021, her most popular works were:

  • The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (114 citations)
  • Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC (52 citations)
  • Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films (43 citations)

In her most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Her primary scientific interests are in Silicon carbide, Optoelectronics, Nanotechnology, Piezoresistive effect and Wafer. Her Silicon carbide study integrates concerns from other disciplines, such as Silicon, Capacitance, Diode, Annealing and Engineering physics. Her study in Optoelectronics is interdisciplinary in nature, drawing from both Single crystal, Logic gate and Capacitor.

The various areas that she examines in her Capacitor study include Oxide and Conduction band. Sima Dimitrijev has researched Piezoresistive effect in several fields, including Condensed matter physics, Doping, Electronic engineering and Microelectromechanical systems. She has included themes like Thin film and Van der Pauw method in her Wafer study.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Principles of semiconductor devices

Sima Dimitrijev.
(2005)

401 Citations

INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING

Hui-feng Li;Sima Dimitrijev;H. Barry Harrison;Denis Sweatman.
Applied Physics Letters (1997)

372 Citations

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Olivier Jamet;Sima Dimitrijev;Philip Tanner.
Journal of Applied Physics (2001)

332 Citations

Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl.
Applied Physics Letters (2003)

266 Citations

Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC

Philippe Olivier Jamet;Sima Dimitrijev.
Applied Physics Letters (2001)

247 Citations

Understanding semiconductor devices

Sima Dimitrijev.
(2000)

189 Citations

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Hoang-Phuong Phan;Dzung Viet Dao;Koichi Nakamura;Sima Dimitrijev.
IEEE/ASME Journal of Microelectromechanical Systems (2015)

184 Citations

Band alignment and defect states at SiC/oxide interfaces

Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl.
Journal of Physics: Condensed Matter (2004)

177 Citations

Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

Hui-feng Li;Sima Dimitrijev;Denis Sweatman;H. Barry Harrison.
Journal of Applied Physics (1999)

140 Citations

Advances in SiC power MOSFET technology

Sima Dimitrijev;Philippe Olivier Jamet.
Microelectronics Reliability (2003)

130 Citations

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