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Materials Science

D-Index
94
Citations
35761
World Ranking
1379
National Ranking
439

Research.com Recognitions

  • 2014 - Fellow of the Materials Research Society
  • 1999 - David Adler Lectureship Award in the Field of Materials Physics

Overview

Leonard C. Feldman is affiliated with Rutgers, The State University of New Jersey in the United States. Their research spans several key areas within engineering and materials science, with a focus on semiconductor materials and devices, electron and X-ray spectroscopy techniques, and perovskite materials and applications.

The main fields of study include:

  • Engineering
  • Materials Science

Their subfields of study highlight specialization in:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Key topics of work explored by Feldman feature:

  • Semiconductor materials and devices
  • Electron and X-Ray Spectroscopy Techniques
  • Perovskite Materials and Applications
  • Silicon Carbide Semiconductor Technologies
  • Ion-surface interactions and analysis
  • Physics of Superconductivity and Magnetism
  • Nanowire Synthesis and Applications

Feldman has contributed to multiple research publications, with frequent output in venues such as:

  • Journal of Applied Physics
  • arXiv (Cornell University)
  • Polity
  • ACS Energy Letters
  • Nature

Selected recent papers include:

  • A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material (2021), published in ACS Energy Letters
  • Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites (2022), published in Advanced Materials
  • An intra-cytoplasmic route for SARS-CoV-2 transmission unveiled by Helium-ion microscopy (2022), published in Scientific Reports
  • TiO2/TiN Interface Enables Integration of Ni5P4 Electrocatalyst with a III-V Tandem Photoabsorber for Stable Unassisted Solar-Driven Water Splitting (2024), published in ACS Energy Letters
  • Effect of surface treatments on ALD Al2O3/4H-SiC metal-oxide-semiconductor field-effect transistors (2021), published in Journal of Applied Physics

Frequent co-authors who have collaborated with Feldman include:

  • Leila Kasaei
  • Hussein Hijazi
  • Sylvie Rangan
  • Vitaly Podzorov
  • Hengfei Gu

Throughout their career, Leonard C. Feldman has been recognized by professional organizations, receiving the Fellow of the Materials Research Society award in 2014 and the David Adler Lectureship Award in the Field of Materials Physics in 1999.

Best Publications

  • Fundamentals of Surface and Thin Film Analysis

    Leonard C. Feldman;James W. Mayer;M. Grasserbauer

  • Materials Analysis by Ion Channeling: Submicron Crystallography

    Leonard C. Feldman;James W. Mayer;S. T. Picraux

  • Materials analysis by ion channeling

    Leonard C. Feldman

  • GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

    J. C. Bean;Leonard C Feldman;A. T. Fiory;S. Nakahara

  • Electronic thin film science : for electrical engineers and materials scientists

    K. N. Tu;James W. Mayer;Leonard C. Feldman

  • Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

    G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  • Clustering on surfaces

    Martin Zinke-Allmang;Leonard C. Feldman;Marcia H. Grabow

  • Equilibrium shape of Si.

    D. J. Eaglesham;A. E. White;L. C. Feldman;N. Moriya

  • Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

    G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald

  • Observation of long-range exciton diffusion in highly ordered organic semiconductors

    H. Najafov;B. Lee;Q. Zhou;L. C. Feldman

  • Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films

    J. Y. Suh;R. Lopez;L. C. Feldman;R. F. Haglund

  • Size effects in the structural phase transition of VO 2 nanoparticles

    Rene Lopez;T. E. Haynes;L. A. Boatner;L. C. Feldman

  • Structurally induced optical transitions in Ge-Si superlattices.

    T. P. Pearsall;J. Bevk;L. C. Feldman;J. M. Bonar

  • Homogeneously Alloyed CdSxSe1-x Nanocrystals: Synthesis, Characterization, and Composition/Size-Dependent Band Gap

    Laura A. Swafford;Lauren A. Weigand;Michael J. Bowers;James R. McBride

  • Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

    Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  • Positron-annihilation momentum profiles in aluminum: Core contribution and the independent-particle model

    K. G. Lynn;J. R. MacDonald;R. A. Boie;L. C. Feldman

  • Modified Deal Grove model for the thermal oxidation of silicon carbide

    Y. Song;S. Dhar;L. C. Feldman;G. Chung

  • Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy

    J. C. Bean;T. T. Sheng;Leonard C Feldman;A. T. Fiory

  • Size-dependent optical properties of VO2 nanoparticle arrays

    Rene Lopez;Leonard C. Feldman;Richard F. Haglund Jr.

  • Structural basis for near unity quantum yield core/shell nanostructures.

    James McBride;Joe Treadway;L. C. Feldman;Stephen J. Pennycook

  • Fundamentals of surface and thin film analysis : North Holland, Amsterdam, 1986 (ISBN 0-444-00989-2). xviii + 352 pp. Price Dfl. 125.00.

    Leonard C. Feldman;James W. Mayer;M. Grasserbauer

Frequent Co-Authors

John R. Williams
John R. Williams Auburn University
Richard F. Haglund
Richard F. Haglund Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
Martin L. Green
Martin L. Green National Institute of Standards and Technology
Eric Garfunkel
Eric Garfunkel Rutgers, The State University of New Jersey
Lynn A. Boatner
Lynn A. Boatner Oak Ridge National Laboratory
B. E. Weir
B. E. Weir Broadcom (United States)
John C. Bean
John C. Bean University of Virginia
Patricia M. Mooney
Patricia M. Mooney Simon Fraser University

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