2014 - Fellow of the Materials Research Society
1999 - David Adler Lectureship Award in the Field of Materials Physics
His scientific interests lie mostly in Analytical chemistry, Silicon, Condensed matter physics, Crystallography and Annealing. His research integrates issues of Order of magnitude, Band gap, Epitaxy and Nitrogen in his study of Analytical chemistry. Leonard C. Feldman has researched Silicon in several fields, including Semiconductor materials, Transmission electron microscopy, Optics and Boron.
His Condensed matter physics study combines topics in areas such as Thin film, Hall effect, Photonic crystal and Germanium. His Crystallography research focuses on Molecular beam epitaxy and how it connects with Dislocation, Heterojunction, Superlattice and Diffraction. His research in Annealing intersects with topics in Ion implantation, Helium and Silicon carbide.
His primary scientific interests are in Optoelectronics, Analytical chemistry, Silicon, Atomic physics and Ion. His Optoelectronics research also works with subjects such as
Leonard C. Feldman usually deals with Silicon and limits it to topics linked to Epitaxy and Crystallography. His Atomic physics study integrates concerns from other disciplines, such as Spectroscopy, Hydrogen and Spectral line. The various areas that Leonard C. Feldman examines in his Ion study include Molecular physics, Scattering and Surface.
The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, Passivation, Nanotechnology and Nitrogen. His Optoelectronics research includes elements of Electronic engineering, Silicon carbide and MOSFET. His Analytical chemistry research incorporates themes from Oxide, Ion, Annealing, Etching and Wide-bandgap semiconductor.
As part of one scientific family, he deals mainly with the area of Oxide, narrowing it down to issues related to the Silicon, and often Inorganic chemistry. In his study, which falls under the umbrella issue of Passivation, Power MOSFET is strongly linked to Field effect. His Nitrogen study incorporates themes from Threshold voltage, Chemical engineering and Epitaxial graphene.
Leonard C. Feldman mainly focuses on Optoelectronics, Passivation, Annealing, Analytical chemistry and Nanotechnology. His Optoelectronics research is multidisciplinary, incorporating elements of Silicon carbide, Transistor, Electronic engineering and Epitaxy. His study in Epitaxy is interdisciplinary in nature, drawing from both Crystallography and Scattering.
His work deals with themes such as Phosphosilicate glass, Electrical resistivity and conductivity and Nitrogen, which intersect with Passivation. His Annealing research incorporates elements of Electron, Metal, Dielectric and MOSFET. His studies deal with areas such as Wide-bandgap semiconductor, Electrochemistry and Silicon as well as Analytical chemistry.
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Fundamentals of Surface and Thin Film Analysis
Leonard C. Feldman;James W. Mayer;M. Grasserbauer.
(1986)
Materials Analysis by Ion Channeling: Submicron Crystallography
Leonard C. Feldman;James W. Mayer;S. T. Picraux.
(2012)
Materials analysis by ion channeling
Leonard C. Feldman.
(1982)
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
J. C. Bean;Leonard C Feldman;A. T. Fiory;S. Nakahara.
Journal of Vacuum Science and Technology (1984)
Electronic thin film science : for electrical engineers and materials scientists
K. N. Tu;James W. Mayer;Leonard C. Feldman.
(1996)
Clustering on surfaces
Martin Zinke-Allmang;Leonard C. Feldman;Marcia H. Grabow.
Surface Science Reports (1992)
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)
Equilibrium shape of Si.
D. J. Eaglesham;A. E. White;L. C. Feldman;N. Moriya.
Physical Review Letters (1993)
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald.
Applied Physics Letters (2000)
Observation of long-range exciton diffusion in highly ordered organic semiconductors
H. Najafov;B. Lee;Q. Zhou;L. C. Feldman.
Nature Materials (2010)
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