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D-Index & Metrics

Materials Science

D-Index
94
Citations
35761
World Ranking
1378
National Ranking
437

Leonard C. Feldman publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Leonard C. Feldman sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 614 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Leonard C. Feldman D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Leonard C. Feldman sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 94 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2014 - Fellow of the Materials Research Society
  • 1999 - David Adler Lectureship Award in the Field of Materials Physics

Overview

Leonard C. Feldman is affiliated with Rutgers, The State University of New Jersey in the United States. Their research spans several key areas within engineering and materials science, with a focus on semiconductor materials and devices, electron and X-ray spectroscopy techniques, and perovskite materials and applications.

The main fields of study include:

  • Engineering
  • Materials Science

Their subfields of study highlight specialization in:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Key topics of work explored by Feldman feature:

  • Semiconductor materials and devices
  • Electron and X-Ray Spectroscopy Techniques
  • Perovskite Materials and Applications
  • Silicon Carbide Semiconductor Technologies
  • Ion-surface interactions and analysis
  • Physics of Superconductivity and Magnetism
  • Nanowire Synthesis and Applications

Feldman has contributed to multiple research publications, with frequent output in venues such as:

  • Journal of Applied Physics
  • arXiv (Cornell University)
  • Polity
  • ACS Energy Letters
  • Nature

Selected recent papers include:

  • A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material (2021), published in ACS Energy Letters
  • Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites (2022), published in Advanced Materials
  • An intra-cytoplasmic route for SARS-CoV-2 transmission unveiled by Helium-ion microscopy (2022), published in Scientific Reports
  • TiO2/TiN Interface Enables Integration of Ni5P4 Electrocatalyst with a III-V Tandem Photoabsorber for Stable Unassisted Solar-Driven Water Splitting (2024), published in ACS Energy Letters
  • Effect of surface treatments on ALD Al2O3/4H-SiC metal-oxide-semiconductor field-effect transistors (2021), published in Journal of Applied Physics

Frequent co-authors who have collaborated with Feldman include:

  • Leila Kasaei
  • Hussein Hijazi
  • Sylvie Rangan
  • Vitaly Podzorov
  • Hengfei Gu

Throughout their career, Leonard C. Feldman has been recognized by professional organizations, receiving the Fellow of the Materials Research Society award in 2014 and the David Adler Lectureship Award in the Field of Materials Physics in 1999.

Best Publications

  • Fundamentals of Surface and Thin Film Analysis

    Leonard C. Feldman;James W. Mayer;M. Grasserbauer

  • Materials Analysis by Ion Channeling: Submicron Crystallography

    Leonard C. Feldman;James W. Mayer;S. T. Picraux

  • Materials analysis by ion channeling

    Leonard C. Feldman

  • GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

    J. C. Bean;Leonard C Feldman;A. T. Fiory;S. Nakahara

  • Electronic thin film science : for electrical engineers and materials scientists

    K. N. Tu;James W. Mayer;Leonard C. Feldman

  • Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

    G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  • Clustering on surfaces

    Martin Zinke-Allmang;Leonard C. Feldman;Marcia H. Grabow

  • Equilibrium shape of Si.

    D. J. Eaglesham;A. E. White;L. C. Feldman;N. Moriya

  • Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

    G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald

  • Observation of long-range exciton diffusion in highly ordered organic semiconductors

    H. Najafov;B. Lee;Q. Zhou;L. C. Feldman

  • Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films

    J. Y. Suh;R. Lopez;L. C. Feldman;R. F. Haglund

  • Size effects in the structural phase transition of VO 2 nanoparticles

    Rene Lopez;T. E. Haynes;L. A. Boatner;L. C. Feldman

  • Structurally induced optical transitions in Ge-Si superlattices.

    T. P. Pearsall;J. Bevk;L. C. Feldman;J. M. Bonar

  • Homogeneously Alloyed CdSxSe1-x Nanocrystals: Synthesis, Characterization, and Composition/Size-Dependent Band Gap

    Laura A. Swafford;Lauren A. Weigand;Michael J. Bowers;James R. McBride

  • Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

    Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  • Positron-annihilation momentum profiles in aluminum: Core contribution and the independent-particle model

    K. G. Lynn;J. R. MacDonald;R. A. Boie;L. C. Feldman

  • Modified Deal Grove model for the thermal oxidation of silicon carbide

    Y. Song;S. Dhar;L. C. Feldman;G. Chung

  • Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy

    J. C. Bean;T. T. Sheng;Leonard C Feldman;A. T. Fiory

  • Size-dependent optical properties of VO2 nanoparticle arrays

    Rene Lopez;Leonard C. Feldman;Richard F. Haglund Jr.

  • Structural basis for near unity quantum yield core/shell nanostructures.

    James McBride;Joe Treadway;L. C. Feldman;Stephen J. Pennycook

  • Fundamentals of surface and thin film analysis : North Holland, Amsterdam, 1986 (ISBN 0-444-00989-2). xviii + 352 pp. Price Dfl. 125.00.

    Leonard C. Feldman;James W. Mayer;M. Grasserbauer

Frequent Co-Authors

John R. Williams
John R. Williams Auburn University
Richard F. Haglund
Richard F. Haglund Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
Martin L. Green
Martin L. Green National Institute of Standards and Technology
Eric Garfunkel
Eric Garfunkel Rutgers, The State University of New Jersey
Lynn A. Boatner
Lynn A. Boatner Oak Ridge National Laboratory
B. E. Weir
B. E. Weir Broadcom (United States)
John C. Bean
John C. Bean University of Virginia
Patricia M. Mooney
Patricia M. Mooney Simon Fraser University

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