H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science D-index 84 Citations 29,117 422 World Ranking 828 National Ranking 319

Research.com Recognitions

Awards & Achievements

2014 - Fellow of the Materials Research Society

1999 - David Adler Lectureship Award in the Field of Materials Physics

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His scientific interests lie mostly in Analytical chemistry, Silicon, Condensed matter physics, Crystallography and Annealing. His research integrates issues of Order of magnitude, Band gap, Epitaxy and Nitrogen in his study of Analytical chemistry. Leonard C. Feldman has researched Silicon in several fields, including Semiconductor materials, Transmission electron microscopy, Optics and Boron.

His Condensed matter physics study combines topics in areas such as Thin film, Hall effect, Photonic crystal and Germanium. His Crystallography research focuses on Molecular beam epitaxy and how it connects with Dislocation, Heterojunction, Superlattice and Diffraction. His research in Annealing intersects with topics in Ion implantation, Helium and Silicon carbide.

His most cited work include:

  • Fundamentals of Surface and Thin Film Analysis (900 citations)
  • Materials analysis by ion channeling (702 citations)
  • GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy (641 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Analytical chemistry, Silicon, Atomic physics and Ion. His Optoelectronics research also works with subjects such as

  • Passivation that intertwine with fields like Wide-bandgap semiconductor,
  • Thin film which is related to area like Condensed matter physics. His Analytical chemistry research includes themes of Oxide, Annealing and Doping.

Leonard C. Feldman usually deals with Silicon and limits it to topics linked to Epitaxy and Crystallography. His Atomic physics study integrates concerns from other disciplines, such as Spectroscopy, Hydrogen and Spectral line. The various areas that Leonard C. Feldman examines in his Ion study include Molecular physics, Scattering and Surface.

He most often published in these fields:

  • Optoelectronics (27.79%)
  • Analytical chemistry (22.81%)
  • Silicon (18.58%)

What were the highlights of his more recent work (between 2011-2021)?

  • Optoelectronics (27.79%)
  • Analytical chemistry (22.81%)
  • Passivation (10.27%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, Passivation, Nanotechnology and Nitrogen. His Optoelectronics research includes elements of Electronic engineering, Silicon carbide and MOSFET. His Analytical chemistry research incorporates themes from Oxide, Ion, Annealing, Etching and Wide-bandgap semiconductor.

As part of one scientific family, he deals mainly with the area of Oxide, narrowing it down to issues related to the Silicon, and often Inorganic chemistry. In his study, which falls under the umbrella issue of Passivation, Power MOSFET is strongly linked to Field effect. His Nitrogen study incorporates themes from Threshold voltage, Chemical engineering and Epitaxial graphene.

Between 2011 and 2021, his most popular works were:

  • Materials Analysis by Ion Channeling: Submicron Crystallography (225 citations)
  • Gold nanostar substrates for SERS-based chemical sensing in the femtomolar regime (123 citations)
  • Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation (83 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Leonard C. Feldman mainly focuses on Optoelectronics, Passivation, Annealing, Analytical chemistry and Nanotechnology. His Optoelectronics research is multidisciplinary, incorporating elements of Silicon carbide, Transistor, Electronic engineering and Epitaxy. His study in Epitaxy is interdisciplinary in nature, drawing from both Crystallography and Scattering.

His work deals with themes such as Phosphosilicate glass, Electrical resistivity and conductivity and Nitrogen, which intersect with Passivation. His Annealing research incorporates elements of Electron, Metal, Dielectric and MOSFET. His studies deal with areas such as Wide-bandgap semiconductor, Electrochemistry and Silicon as well as Analytical chemistry.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Fundamentals of Surface and Thin Film Analysis

Leonard C. Feldman;James W. Mayer;M. Grasserbauer.
(1986)

1847 Citations

Materials Analysis by Ion Channeling: Submicron Crystallography

Leonard C. Feldman;James W. Mayer;S. T. Picraux.
(2012)

1557 Citations

Materials analysis by ion channeling

Leonard C. Feldman.
(1982)

1095 Citations

GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

J. C. Bean;Leonard C Feldman;A. T. Fiory;S. Nakahara.
Journal of Vacuum Science and Technology (1984)

950 Citations

Electronic Thin Film Science: For Electrical Engineers And Materials Scientists

K. N. Tu;James W. Mayer;Leonard C. Feldman.
(1996)

911 Citations

Clustering on surfaces

Martin Zinke-Allmang;Leonard C. Feldman;Marcia H. Grabow.
Surface Science Reports (1992)

770 Citations

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)

666 Citations

Equilibrium shape of Si.

Eaglesham Dj;White Ae;Feldman Lc;Moriya N.
Physical Review Letters (1993)

616 Citations

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald.
Applied Physics Letters (2000)

507 Citations

Observation of long-range exciton diffusion in highly ordered organic semiconductors

H. Najafov;B. Lee;Q. Zhou;L. C. Feldman.
Nature Materials (2010)

421 Citations

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