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D-Index & Metrics

Materials Science

D-Index
64
Citations
16560
World Ranking
5834
National Ranking
1506

Overview

John C. Bean is affiliated with the University of Virginia in the United States. Their research collaborations include frequent co-authorship with Larry Nichols and Jeffrey S. Philpott, indicating a pattern of joint scholarly work.

Their contribution to academic literature is documented through multiple papers, although specific titles and venues are not provided in the available data. Similarly, no explicit details are available regarding their primary fields or subfields of study, main topics of work, or publication venues.

There is no record of book publications associated with John C. Bean, nor is there information about awards received during their career.

The available data reflects an active academic presence based on collaboration patterns but lacks additional specifics related to research themes or publication metrics.

Best Publications

  • Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

    R. People;J. C. Bean

  • GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

    J. C. Bean;Leonard C Feldman;A. T. Fiory;S. Nakahara

  • Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures

    D. V. Lang;R. People;J. C. Bean;A. M. Sergent

  • Modulation doping in GexSi1−x/Si strained layer heterostructures

    R. People;J. C. Bean;D. V. Lang;A. M. Sergent

  • Silicon-based semiconductor heterostructures: column IV bandgap engineering

    J.C. Bean

  • Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors

    D. H. Auston;A. M. Johnson;P. R. Smith;J. C. Bean

  • Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy

    J. C. Bean;T. T. Sheng;Leonard C Feldman;A. T. Fiory

  • Observation of order-disorder transitions in strained-semiconductor systems.

    A. Ourmazd;J. C. Bean

  • Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

    C. Teichert;M. G. Lagally;L. J. Peticolas;J. C. Bean

  • Raman scattering from GexSi1−x/Si strained‐layer superlattices

    F. Cerdeira;A. Pinczuk;J. C. Bean;B. Batlogg

  • GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm

    H. Temkin;T. P. Pearsall;J. C. Bean;R. A. Logan

  • Misfit dislocations in lattice-mismatched epitaxial films

    Robert Hull;John C. Bean

  • Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon

    J. C. Bean;G. E. Becker;P. M. Petroff;T. E. Seidel

  • New infrared detector on a silicon chip

    S. Luryi;A. Kastalsky;J.C. Bean

  • Growth of single‐crystal CoSi2 on Si(111)

    R. T. Tung;J. C. Bean;J. M. Gibson;J. M. Poate

  • Stability of semiconductor strained‐layer superlattices

    R. Hull;J. C. Bean;F. Cerdeira;A. T. Fiory

  • Silicon/metal silicide heterostructures grown by molecular beam epitaxy

    J. C. Bean;J. M. Poate

  • Dislocation nucleation near the critical thickness in GeSi/Si strained layers

    D. J. Eaglesham;E. P. Kvam;D. M. Maher;C. J. Humphreys

  • Mechanism of organization of three-dimensional islands in SiGe/Si multilayers

    E. Mateeva;P. Sutter;J. C. Bean;M. G. Lagally

  • Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)

    A. T. Fiory;J. C. Bean;L. C. Feldman;I. K. Robinson

Frequent Co-Authors

Robert Hull
Robert Hull Rensselaer Polytechnic Institute
John M. Poate
John M. Poate Nokia (United States)
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
Raymond T. Tung
Raymond T. Tung City University of New York
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London
Ian K. Robinson
Ian K. Robinson University College London
Henryk Temkin
Henryk Temkin Texas Tech University
Max G. Lagally
Max G. Lagally University of Wisconsin–Madison
Joe C. Campbell
Joe C. Campbell University of Virginia
J. P. Harbison
J. P. Harbison Telcordia Technologies

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