2026 Max G. Lagally: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	90	1685	1620	519	485	639	30563
Physics	95	1928	1832	1003	937	648	33540

Max G. Lagally publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Max G. Lagally sits on this spectrum.

50 publications 1,163+

This scientist: 639 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Max G. Lagally D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Max G. Lagally sits on this spectrum.

40 D-Index 165+

This scientist: 90 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

2012 - Fellow, National Academy of Inventors
2009 - Fellow of the Materials Research Society
2001 - Member of the National Academy of Engineering For contributions to surface science, in particular in semiconductor film growth and in the development of novel analytical techniques.
2000 - Fellow of the American Association for the Advancement of Science (AAAS)
1999 - German National Academy of Sciences Leopoldina - Deutsche Akademie der Naturforscher Leopoldina – Nationale Akademie der Wissenschaften Physics
1995 - Davisson–Germer Prize in Atomic or Surface Physics, American Physical Society
1994 - David Adler Lectureship Award in the Field of Materials Physics
1994 - MRS Medal, Materials Research Society For innovative development of STM as a quantitative probe of the microscopic mechanisms of crystal growth and ordering at surfaces
1994 - David Adler Lectureship Award in the Field of Materials Physics, American Physical Society
1980 - Fellow of American Physical Society (APS) Citation Not Provided
1973 - Fellow of Alfred P. Sloan Foundation

Overview

Max G. Lagally is affiliated with the University of Wisconsin-Madison in the United States. Their research primarily spans the fields of Engineering, Materials Science, and Physics and Astronomy, with notable emphasis on Electrical and Electronic Engineering, Materials Chemistry, and Atomic and Molecular Physics, and Optics.

Their scientific work addresses a variety of topics including Semiconductor Quantum Structures and Devices, Thermal properties of materials, Graphene research and applications, Photonic and Optical Devices, Quantum and electron transport phenomena, Advancements in Semiconductor Devices and Circuit Design, and Gyrotron and Vacuum Electronics Research.

Recent publications by Max G. Lagally include:

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits, 2022, Nature Communications
Repetitive Quantum Nondemolition Measurement and Soft Decoding of a Silicon Spin Qubit, 2020, Physical Review X
Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well, 2021, Physical Review B
Thickness-Dependent Cross-Plane Thermal Conductivity Measurements of Exfoliated Hexagonal Boron Nitride, 2023, ACS Applied Materials & Interfaces
Spatial noise correlations in a Si/SiGe two-qubit device from Bell state coherences, 2020, Physical Review B

Max G. Lagally frequently publishes in venues such as arXiv (Cornell University), Zenodo (CERN European Organization for Nuclear Research), Physical Review B, ACS Applied Materials & Interfaces, and ACS Nano.

The scientist collaborates often with coauthors including M. A. Eriksson, D. E. Savage, S. N. Coppersmith, Mark Friesen, and Robert Joynt.

Throughout their career, Max G. Lagally has been recognized with several awards and honors such as:

Fellow, National Academy of Inventors (2012)
Fellow of the Materials Research Society (2009)
Member of the National Academy of Engineering (2001) for contributions to surface science, particularly in semiconductor film growth and novel analytical techniques
Fellow of the American Association for the Advancement of Science (AAAS) (2000)
Member of the German National Academy of Sciences Leopoldina (1999) in Physics
Davisson-Germer Prize in Atomic or Surface Physics, American Physical Society (1995)
David Adler Lectureship Award in the Field of Materials Physics (1994)
MRS Medal, Materials Research Society (1994), for innovative development of STM as a quantitative probe of crystal growth and ordering at surfaces
Fellow of American Physical Society (APS) (1980)
Fellow of Alfred P. Sloan Foundation (1973)

Best Publications

Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).

Y.-W. Mo;D. E. Savage;B. S. Swartzentruber;M. G. Lagally

1898
Citations
Self-organization in growth of quantum dot superlattices.

J. Tersoff;C. Teichert;M. G. Lagally

1585
Citations
Atomistic Processes in the Early Stages of Thin-Film Growth

Zhenyu Zhang;Max G. Lagally

1279
Citations
Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study.

Y. W. Mo;J. Kleiner;M. B. Webb;M. G. Lagally

921
Citations
A programmable two-qubit quantum processor in silicon

T. F. Watson;S. G. J. Philips;E. Kawakami;D. R. Ward

820
Citations
Synthesis, assembly and applications of semiconductor nanomembranes

J. A. Rogers;M. G. Lagally;R. G. Nuzzo

774
Citations
In Situ Visualization of DNA Double-Strand Break Repair in Human Fibroblasts

Benjamin E. Nelms;Richard S. Maser;James F. MacKay;Max G. Lagally

621
Citations
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot.

E. Kawakami;P. Scarlino;D. R. Ward;F. R. Braakman;F. R. Braakman

566
Citations
Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces

B. S. Swartzentruber;Y.‐W. Mo;M. B. Webb;M. G. Lagally

492
Citations
Growth and equilibrium structures in the epitaxy of Si on Si(001).

Y.-W. Mo;B. S. Swartzentruber;R. Kariotis;M. B. Webb

419
Citations
Direct determination of step and kink energies on vicinal Si(001).

B. S. Swartzentruber;Y.-W. Mo;R. Kariotis;M. G. Lagally

416
Citations
Step-bunching instability of vicinal surfaces under stress.

J. Tersoff;Y. H. Phang;Zhenyu Zhang;M. G. Lagally

403
Citations
Determination of roughness correlations in multilayer films for x‐ray mirrors

D. E. Savage;J. Kleiner;N. Schimke;Y.‐H. Phang

373
Citations
Atom Motion on Surfaces

Max G. Lagally

368
Citations
Kinetics of ordering and growth at surfaces

Growth at Surfaces;Max G. Lagally

351
Citations
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Dohun Kim;Zhan Shi;C. B. Simmons;D. R. Ward

344
Citations
Anisotropy in surface migration of Si and Ge on Si(001)

Y.-W. Mo;M.G. Lagally

332
Citations
Practical design and simulation of silicon-based quantum-dot qubits

Mark Friesen;Paul Rugheimer;Donald E. Savage;Max G. Lagally

330
Citations
Surface self-diffusion of Si on Si(001)

Y.-W. Mo;J. Kleiner;M.B. Webb;M.G. Lagally

325
Citations
Elastically relaxed free-standing strained-silicon nanomembranes.

Michelle M. Roberts;Levente J. Klein;Donald E. Savage;Keith A. Slinker

323
Citations