2007 - Davisson–Germer Prize in Atomic or Surface Physics, American Physical Society
1985 - Fellow of American Physical Society (APS) Citation For his principal role in the development of photoemission and inverse photoemission into powerful techniques for the determination of energy band dispersion of electrons in bulk solids and at surfaces
His primary areas of study are Atomic physics, Silicon, Condensed matter physics, Analytical chemistry and Electronic band structure. His Atomic physics research incorporates elements of Surface states, Inverse photoemission spectroscopy, Angle-resolved photoemission spectroscopy and Diamond. F. J. Himpsel works mostly in the field of Silicon, limiting it down to concerns involving Chemical vapor deposition and, occasionally, Epitaxy.
His work in Condensed matter physics addresses subjects such as Inverse, which are connected to disciplines such as Superlattice. His study on Analytical chemistry also encompasses disciplines like
The scientist’s investigation covers issues in Atomic physics, Condensed matter physics, Analytical chemistry, Electronic structure and Silicon. His Atomic physics study combines topics from a wide range of disciplines, such as Spectroscopy, Inverse photoemission spectroscopy, Angle-resolved photoemission spectroscopy, Surface states and Electronic band structure. His work carried out in the field of Condensed matter physics brings together such families of science as Quantum well, Fermi level and Inverse.
His biological study spans a wide range of topics, including Spectral line, Thin film, Monolayer and Chemisorption. His research investigates the connection between Electronic structure and topics such as Crystallography that intersect with issues in Molecular physics. The study incorporates disciplines such as Scanning tunneling microscope, Chemical vapor deposition and Epitaxy in addition to Silicon.
His main research concerns Absorption spectroscopy, Condensed matter physics, Silicon, Crystallography and Atomic physics. The various areas that F. J. Himpsel examines in his Absorption spectroscopy study include Spectroscopy, Photochemistry and Electronic structure. His studies examine the connections between Condensed matter physics and genetics, as well as such issues in Semiconductor, with regards to Band gap.
His Crystallography study incorporates themes from Monolayer, Self-assembly, Molecular physics, XANES and Density functional theory. F. J. Himpsel combines subjects such as Inverse photoemission spectroscopy, Angle-resolved photoemission spectroscopy, Electron and X-ray photoelectron spectroscopy with his study of Atomic physics. His research integrates issues of Thin film and Dielectric in his study of Analytical chemistry.
His primary areas of investigation include Absorption spectroscopy, Silicon, Crystallography, XANES and Condensed matter physics. His studies deal with areas such as Scanning tunneling microscope, Nanowire, Electronic band structure and Nanostructure as well as Silicon. His study in Condensed matter physics is interdisciplinary in nature, drawing from both Spin polarization and Semiconductor.
The concepts of his Spectroscopy study are interwoven with issues in Scattering and Atomic physics. His research in Atomic physics intersects with topics in Exciton and Absorption. His Monolayer study combines topics in areas such as Spectral line, Molecular physics and Analytical chemistry.
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Microscopic structure of the SiO 2 /Si interface
F. J. Himpsel;F. R. McFeely;A. Taleb-Ibrahimi;J. A. Yarmoff.
Physical Review B (1988)
Quantum photoyield of diamond(111)—A stable negative-affinity emitter
F. J. Himpsel;J. A. Knapp;J. A. VanVechten;D. E. Eastman.
Physical Review B (1979)
Quantum-well states and magnetic coupling between ferromagnets through a noble-metal layer.
J. E. Ortega;F. J. Himpsel;G. J. Mankey;R. F. Willis.
Physical Review B (1993)
Angle-resolved measurements of the photoemission of electrons in the study of solids
Advances in Physics (1983)
Quantum well states as mediators of magnetic coupling in superlattices.
J. E. Ortega;F. J. Himpsel.
Physical Review Letters (1992)
Probing the transition layer at the SiO2‐Si interface using core level photoemission
G. Hollinger;F. J. Himpsel.
Applied Physics Letters (1984)
First experimental results from IBM/TENN/TULANE/LLNL/LBL undulator beamline at the advanced light source
Jianjun Jia;Thomas A. Callcott;J. Yurkas;Arthur W. Ellis.
Review of Scientific Instruments (1995)
Determination of the Fermi-level pinning position at Si(111) surfaces
F. J. Himpsel;G. Hollinger;R. A. Pollak.
Physical Review B (1983)
Oxidation studies of SiGe
F. K. LeGoues;R. Rosenberg;T. Nguyen;F. Himpsel.
Journal of Applied Physics (1989)
Experimental energy band dispersions and lifetimes for valence and conduction bands of copper using angle-resolved photoemission
J. A. Knapp;F. J. Himpsel;D. E. Eastman.
Physical Review B (1979)
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