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Chemistry

D-Index
58
Citations
10510
World Ranking
10762
National Ranking
207

Overview

J. F. van der Veen is affiliated with the Paul Scherrer Institute in Switzerland. Their research spans multiple scientific fields, with a focus on medicine and environmental science, and extends into several specialized subfields including condensed matter physics, molecular biology, cardiology and cardiovascular medicine, electrical and electronic engineering, and health, toxicology, and mutagenesis.

The scientist's recent publications cover a range of topics and have appeared in various academic journals. Notable papers include: "Massive coronary thrombosis caused primary percutaneous coronary intervention to fail in a COVID-19 patient with ST-elevation myocardial infarction" (2020) published in Catheterization and Cardiovascular Interventions; "Management of chemotherapy hypersensitivity reactions and desensitization: An SGO clinical practice statement" (2023) in Gynecologic Oncology; and "Bias stability of solution-processed In2O3 thin film transistors" (2020) in Journal of Physics Materials.

Additional recent works are "Imaging the magnetic nanowire cross section and magnetic ordering within a suspended 3D artificial spin-ice" (2024) in APL Materials and "Addressing the urgent need for direct climate cooling: Rationale and options" (2024) in Oxford Open Climate Change.

The main topics that J. F. van der Veen has worked on include:

  • Acute Myocardial Infarction Research
  • COVID-19 Clinical Research Studies
  • COVID-19 and healthcare impacts
  • Drug-Induced Adverse Reactions
  • Pharmaceutical studies and practices
  • Potassium and Related Disorders
  • Thin-Film Transistor Technologies

Frequent coauthors include Sherif Seif, Ahmed Ayuna, Abhishek Kumar, T.R. Hall, and K.M. Bylinowski, indicating collaborative research efforts across different topics and fields.

J. F. van der Veen has published regularly in a diverse set of scientific journals such as Catheterization and Cardiovascular Interventions, Gynecologic Oncology, Journal of Physics Materials, APL Materials, and Oxford Open Climate Change.

Best Publications

  • Observation of surface melting

    Joost W. M. Frenken;J. F. van der Veen

  • Ion beam crystallography of surfaces and interfaces

    J.F. van der Veen

  • Generation of misfit dislocations in semiconductors

    P. M. J. Marée;J. C. Barbour;J. F. van der Veen;K. L. Kavanagh

  • Crystal-face dependence of surface melting.

    B. Pluis;A. W. Denier van der Gon;J. W. M. Frenken;J. F. van der Veen

  • Layering of a liquid metal in contact with a hard wall

    W.J. Huisman;J.F. Peters;M.J. Zwanenburg;S.A. de Vries

  • Surface-induced melting and freezing. II, A semi-empirical landau-type model

    B Pluis;D Frenkel;J.F van der Veen

  • Thin epitaxial Ge-Si(111) films: Study and control of morphology

    P.M.J. Marée;K. Nakagawa;F.M. Mulders;J.F. van der Veen

  • Melting of al surfaces

    A.W.Denier van der Gon;R.J. Smith;D.J. O'connor

  • GaAs ( 001 ) − c ( 4 × 4 ) : A chemisorbed structure

    P. K. Larsen;J. H. Neave;J. F. van der Veen;P. J. Dobson

  • Structure-dependent surface core level shifts for the Au(111), (100), and (110) surfaces

    P. Heimann;J.F. van der Veen;D.E. Eastman

  • Structure-Dependent 4 f —Core-Level Binding Energies for Surface Atoms on Ir(111), Ir(100)-(5 × 1), and Metastable Ir(100)-(1 × 1)

    J. F. van der Veen;F. J. Himpsel;D. E. Eastman

  • Surface X-ray scattering during crystal growth: Ge on Ge(111)

    E. Vlieg;A. W. Denier van der Gon;J. F. van der Veen;J. E. Macdonald

  • Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

    P. K. Larsen;J. F. van der Veen;A. Mazur;J. Pollmann

  • Theory and simulation of high-energy ion scattering experiments for structure analysis of surfaces and interfaces

    J.W.M. Frenken;R.M. Tromp;J.F. van der Veen

  • The adsorption of Ag on the Si(111) 7 × 7 surface at room temperature studied by medium energy ion scattering, leed and aes

    E.J. Van Loenen;M. Iwami;R.M. Tromp;J.F. Van Der Veen

  • Strain relaxation during the initial stages of growth in Ge/Si(001)

    Ashley Williams;J. M. C. Thornton;John Emyr MacDonald;R. van Silfhout

  • Relation between surface relaxation and surface force constants in clean and oxygen-covered Ni (001)

    Joost W. M. Frenken;J. F. van der Veen;G. Allan

  • Role of long-range interactions in the melting of a metallic surface.

    B. Pluis;T.N. Taylor;D. Frenkel;J.F. van der Veen

  • Ion beam crystallography of silicon surfaces III. Si(111)-(7 × 7)

    L. Smit;R.M. Tromp;J.F. van der Veen

  • Photoemission studies of surface core‐level shifts and their applications

    D. E. Eastman;F. J. Himpsel;J. F. van der Veen

  • Real-space determination of atomic structure and bond relaxation at the NiSi2-Si(111) interface.

    E. J. van Loenen;J. W. M. Frenken;J. F. van der Veen;S. Valeri

  • Geometric structure of the NiSi2-Si(111) interface: An x-ray standing-wave analysis

    E. Vlieg;A.E.M.J. Fischer;J.F. van der Veen;B.N. Dev

Frequent Co-Authors

Joost W. M. Frenken
Joost W. M. Frenken Leiden University
F. J. Himpsel
F. J. Himpsel University of Wisconsin–Madison
Rudolf M. Tromp
Rudolf M. Tromp IBM (United States)
Franz Pfeiffer
Franz Pfeiffer Technical University of Munich
B.A. Joyce
B.A. Joyce Imperial College London
Karsten Horn
Karsten Horn Fritz Haber Institute of the Max Planck Society
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Karen L. Kavanagh
Karen L. Kavanagh Simon Fraser University
Sadafumi Yoshida
Sadafumi Yoshida National Institute of Advanced Industrial Science and Technology
Daan Frenkel
Daan Frenkel University of Cambridge

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