2026 Raymond T. Tung: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	50	10073	9729	2414	2239	171	15458

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

10073

9729

2414

2239

171

15458

Research.com Recognitions

1991 - Fellow of American Physical Society (APS) Citation For research on the growth and properties of epitaxial silicides and major contributions to the understanding of metalsemiconductor interfaces

Overview

Raymond T. Tung is affiliated with the City University of New York in the United States. Their research primarily spans the fields of Engineering and Physics and Astronomy, with a particular focus on Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, and Materials Chemistry. Their scholarly work centers on semiconductor materials and interfaces, semiconductor devices, and integrated circuits and semiconductor failure analysis.

The main topics of their research include:

Semiconductor materials and interfaces
Semiconductor materials and devices
Integrated Circuits and Semiconductor Failure Analysis
Molecular Junctions and Nanostructures
Electronic and Structural Properties of Oxides
ZnO doping and properties

Raymond T. Tung has contributed to several recent papers, reflecting their ongoing engagement in studying semiconductor interfaces and related phenomena. These publications include:

"Quantitative explanation of the Schottky barrier height," 2021, published in Physical Review B
"Fermi level pinning for zinc-blende semiconductors explained with interface bonds," 2021, published in Physical Review B
"From NiSi2 experiments to density functional theory calculations: How the Schottky barrier mystery was solved," 2021, published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
"Band alignment at polycrystalline interfaces explained with bulk densities," 2024, published in Journal of Applied Physics

The venues in which Tung frequently publishes indicate a consistent presence in journals specializing in condensed matter physics and applied physics:

Physical Review B
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Journal of Applied Physics

A notable frequent coauthor of Tung is Leeor Kronik, with whom they have collaborated on multiple publications.

Tung's contributions to the understanding of metal-semiconductor interfaces have been formally recognized; they were awarded the Fellow of the American Physical Society (APS) in 1991. The citation for this award highlights their research on the growth and properties of epitaxial silicides and significant contributions to the study of metal-semiconductor interfaces.

Best Publications

Electron transport at metal-semiconductor interfaces : general theory

R. T. Tung

2058
Citations
Recent advances in Schottky barrier concepts

Raymond T. Tung

1621
Citations
The physics and chemistry of the Schottky barrier height

Raymond T. Tung

1579
Citations
Electron transport of inhomogeneous Schottky barriers: A numerical study

J. P. Sullivan;R. T. Tung;M. R. Pinto;W. R. Graham

1005
Citations
Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces

R. T. Tung

589
Citations
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Si 2 Epitaxial Structures

R. T. Tung;J. M. Gibson;J. M. Poate

575
Citations
Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces

Raymond T. Tung

546
Citations
ELECTRON TRANSPORT OF INHOMOGENEOUS SCHOTTKY BARRIERS

R. T. Tung

462
Citations
Formation of an electric dipole at metal-semiconductor interfaces

Raymond T. Tung

425
Citations
Electrostatic Properties of Ideal and Non-ideal Polar Organic Monolayers: Implications for Electronic Devices

Amir Natan;Leeor Kronik;Hossam Haick;Raymond T. Tung

287
Citations
Origin of the excess capacitance at intimate Schottky contacts.

J. Werner;A. F. J. Levi;R. T. Tung;M. Anzlowar

281
Citations
Oxide mediated epitaxy of CoSi2 on silicon

R. T. Tung

264
Citations
Schottky-barrier inhomogeneity at epitaxial NiSi2 interfaces on Si(100).

R. T. Tung;A. F. J. Levi;J. P. Sullivan;F. Schrey

262
Citations
Growth of single‐crystal CoSi2 on Si(111)

R. T. Tung;J. C. Bean;J. M. Gibson;J. M. Poate

242
Citations
Transistor action in Si/CoSi2/Si heterostructures

J. C. Hensel;A. F. J. Levi;R. T. Tung;J. M. Gibson

239
Citations
Growth of single crystal epitaxial silicides on silicon by the use of template layers

R. T. Tung;J. M. Gibson;J. M. Poate

193
Citations
Single atom self-diffusion on nickel surfaces

Raymond T. Tung;William R. Graham

190
Citations
Control of a natural permeable CoSi2 base transistor

R. T. Tung;A. F. J. Levi;J. M. Gibson

174
Citations
Specular boundary scattering and electrical transport in single-crystal thin films of CoSi2.

J. C. Hensel;R. T. Tung;J. M. Poate;F. C. Unterwald

163
Citations
Electrical transport properties of CoSi2 and NiSi2 thin films

J. C. Hensel;R. T. Tung;J. M. Poate;F. C. Unterwald

162
Citations
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

R. T. Tung;J. M. Gibson;J. M. Poate

10
Citations