2012 - Fellow of the Materials Research Society
2009 - ASM Fellow For scientific contributions to the understanding of how point and line defects influence the performance of ion implanted semiconductors.
His main research concerns Analytical chemistry, Silicon, Ion implantation, Annealing and Transmission electron microscopy. His studies in Analytical chemistry integrate themes in fields like Impurity, Mineralogy and Boron. His Silicon study combines topics from a wide range of disciplines, such as Wafer, Doping, Dopant and Crystallography, Crystallographic defect.
His Ion implantation study incorporates themes from Amorphous solid, Ion beam and Semiconductor. His work deals with themes such as Nucleation, Dissolution, Optoelectronics, Dislocation and Vacancy defect, which intersect with Annealing. He has researched Transmission electron microscopy in several fields, including Electron diffraction and Substrate.
His primary scientific interests are in Silicon, Annealing, Analytical chemistry, Ion implantation and Optoelectronics. The Silicon study combines topics in areas such as Wafer, Doping, Boron, Crystallography and Transmission electron microscopy. His work carried out in the field of Transmission electron microscopy brings together such families of science as Molecular physics and Dislocation.
The various areas that Kevin S. Jones examines in his Annealing study include Nucleation, Dissolution, Dopant, Germanium and Ion. The concepts of his Analytical chemistry study are interwoven with issues in Molecular beam epitaxy, Thin film, Mineralogy and Microstructure. His Ion implantation study also includes fields such as
Kevin S. Jones mainly investigates Optoelectronics, Annealing, Silicon, Ion implantation and Doping. His Optoelectronics research incorporates themes from Oxide, Nanotechnology, Nanostructure, Ohmic contact and Transistor. He has researched Annealing in several fields, including Electron mobility, Epitaxy, Heterojunction, Dissolution and Analytical chemistry.
His Silicon research is multidisciplinary, incorporating perspectives in Inorganic chemistry, Oxidizing agent, Transmission electron microscopy and Raman spectroscopy. His work in the fields of Co implantation overlaps with other areas such as Implant. His Doping research integrates issues from Molecular beam epitaxy and Thermal treatment.
His primary areas of investigation include Optoelectronics, Annealing, Silicon, Ion implantation and Doping. In his research on the topic of Annealing, Germanium is strongly related with Nanotechnology. His Silicon research is multidisciplinary, relying on both Inorganic chemistry, Theoretical physics and Classical mechanics.
His Ion implantation study is associated with Ion. The Doping study combines topics in areas such as Surface roughness, Molecular beam epitaxy, Thermal treatment and Analytical chemistry. His study on Analytical chemistry is mostly dedicated to connecting different topics, such as Transmission electron microscopy.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: