D-Index & Metrics

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 40 Citations 7,148 459 World Ranking 10008 National Ranking 2556

Research.com Recognitions

Awards & Achievements

2012 - Fellow of the Materials Research Society

2009 - ASM Fellow For scientific contributions to the understanding of how point and line defects influence the performance of ion implanted semiconductors.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Analytical chemistry, Silicon, Ion implantation, Annealing and Transmission electron microscopy. His studies in Analytical chemistry integrate themes in fields like Impurity, Mineralogy and Boron. His Silicon study combines topics from a wide range of disciplines, such as Wafer, Doping, Dopant and Crystallography, Crystallographic defect.

His Ion implantation study incorporates themes from Amorphous solid, Ion beam and Semiconductor. His work deals with themes such as Nucleation, Dissolution, Optoelectronics, Dislocation and Vacancy defect, which intersect with Annealing. He has researched Transmission electron microscopy in several fields, including Electron diffraction and Substrate.

His most cited work include:

  • A systematic analysis of defects in ion-implanted silicon (443 citations)
  • Three-Dimensional Reconstruction of Porous LSCF Cathodes (151 citations)
  • Ion implantation technology (139 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Silicon, Annealing, Analytical chemistry, Ion implantation and Optoelectronics. The Silicon study combines topics in areas such as Wafer, Doping, Boron, Crystallography and Transmission electron microscopy. His work carried out in the field of Transmission electron microscopy brings together such families of science as Molecular physics and Dislocation.

The various areas that Kevin S. Jones examines in his Annealing study include Nucleation, Dissolution, Dopant, Germanium and Ion. The concepts of his Analytical chemistry study are interwoven with issues in Molecular beam epitaxy, Thin film, Mineralogy and Microstructure. His Ion implantation study also includes fields such as

  • Amorphous solid which connect with Recrystallization and Amorphous silicon,
  • Crystallographic defect that connect with fields like Vacancy defect.

He most often published in these fields:

  • Silicon (42.12%)
  • Annealing (35.48%)
  • Analytical chemistry (34.23%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (23.65%)
  • Annealing (35.48%)
  • Silicon (42.12%)

In recent papers he was focusing on the following fields of study:

Kevin S. Jones mainly investigates Optoelectronics, Annealing, Silicon, Ion implantation and Doping. His Optoelectronics research incorporates themes from Oxide, Nanotechnology, Nanostructure, Ohmic contact and Transistor. He has researched Annealing in several fields, including Electron mobility, Epitaxy, Heterojunction, Dissolution and Analytical chemistry.

His Silicon research is multidisciplinary, incorporating perspectives in Inorganic chemistry, Oxidizing agent, Transmission electron microscopy and Raman spectroscopy. His work in the fields of Co implantation overlaps with other areas such as Implant. His Doping research integrates issues from Molecular beam epitaxy and Thermal treatment.

Between 2013 and 2021, his most popular works were:

  • Ambient measurements and source apportionment of fossil fuel and biomass burning black carbon in Ontario (64 citations)
  • Ankyrin-G regulates forebrain connectivity and network synchronization via interaction with GABARAP (19 citations)
  • Deposition, characterization and gas sensors application of RF magnetron-sputtered terbium-doped ZnO films (16 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of investigation include Optoelectronics, Annealing, Silicon, Ion implantation and Doping. In his research on the topic of Annealing, Germanium is strongly related with Nanotechnology. His Silicon research is multidisciplinary, relying on both Inorganic chemistry, Theoretical physics and Classical mechanics.

His Ion implantation study is associated with Ion. The Doping study combines topics in areas such as Surface roughness, Molecular beam epitaxy, Thermal treatment and Analytical chemistry. His study on Analytical chemistry is mostly dedicated to connecting different topics, such as Transmission electron microscopy.

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