2026 Kevin S. Jones: Materials Science Researcher – H-Index, Publications & Awards

Research.com Recognitions

2012 - Fellow of the Materials Research Society
2009 - ASM Fellow For scientific contributions to the understanding of how point and line defects influence the performance of ion implanted semiconductors.

Overview

Kevin S. Jones is affiliated with the University of Florida in the United States and specializes in research at the intersection of engineering and materials science. Their work predominantly focuses on semiconductor materials and devices, nanowire synthesis and applications, and advanced fabrication techniques in electronic materials.

The primary fields of study for this researcher include:

Engineering
Materials Science

Within these fields, they focus on subfields such as:

Electrical and Electronic Engineering
Materials Chemistry
Electronic, Optical and Magnetic Materials
Biomedical Engineering
Polymers and Plastics

Key topics covered in their publications are:

Semiconductor materials and devices
Nanowire synthesis and applications
Silicon nanostructures and photoluminescence
Supercapacitor materials and fabrication
Conducting polymers and applications
Silicon and solar cell technologies
GaN-based semiconductor devices and materials

Kevin S. Jones has published in several frequent venues, including:

Journal of Applied Physics
Nano Letters
Journal of Power Sources
Applied Surface Science
SAE technical papers on CD-ROM/SAE technical paper series

Notable recent publications by Jones include:

Ultralow Voltage GaN Vacuum Nanodiodes in Air (2021) in Nano Letters
Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid (2021) in Nanotechnology
On the rate capability of supercapacitors characterized by a constant-phase element (2021) in Journal of Power Sources
Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures (2020) in Ultramicroscopy
Single step bonding of thick anodized aluminum oxide templates to silicon wafers for enhanced system-on-a-chip performance (2020) in Journal of Power Sources

Frequent co-authors collaborating with Jones include:

George T. Wang
Emily M. Turner
Gibson P. Scisco
Kirk J. Ziegler
Keshab Sapkota

Jones has been recognized with professional honors such as:

Fellow of the Materials Research Society (2012)
ASM Fellow (2009) for contributions related to point and line defects in ion implanted semiconductors

Best Publications

A systematic analysis of defects in ion-implanted silicon

K. S. Jones;S. Prussin;E. R. Weber

699
Citations
Three-Dimensional Reconstruction of Porous LSCF Cathodes

D. Gostovic;J. R. Smith;D. P. Kundinger;K. S. Jones

274
Citations
Ion implantation technology

DF Downey;KS Jones;M Farley;G Ryding

207
Citations
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Lin Jiang;Sheng S. Li;Nien Tze Yeh;Jen Inn Chyi

202
Citations
Ambient measurements and source apportionment of fossil fuel and biomass burning black carbon in Ontario

R.M. Healy;U. Sofowote;Y. Su;J. Debosz

178
Citations
Transient enhanced diffusion without {311} defects in low energy B + -implanted silicon

L. H. Zhang;K. S. Jones;P. H. Chi;D. S. Simons

172
Citations
Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs

J.R. Smith;A. Chen;D. Gostovic;D. Hickey

162
Citations
Effect of fluorine on the diffusion of boron in ion implanted Si

Daniel F. Downey;Judy W. Chow;Emi Ishida;Kevin S. Jones

149
Citations
{311} defects in silicon: The source of the loops

Jinghong Li;Kevin S. Jones

129
Citations
Direct comparison of the quantized Hall resistance in gallium arsenide and silicon.

A. Hartland;K. Jones;J. M. Williams;B. L. Gallagher

128
Citations
SiO2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

D. A. Cole;J. R. Shallenberger;S. W. Novak;R. L. Moore

128
Citations
Amorphization and graphitization of single-crystal diamond — A transmission electron microscopy study

D P Hickey;K S Jones;Robert Elliman

106
Citations
Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes

N. G. Rudawski;B. L. Darby;B. R. Yates;K. S. Jones

103
Citations
The effect of implant energy, dose, and dynamic annealing on end‐of‐range damage in Ge+‐implanted silicon

K. S. Jones;D. Venables

98
Citations
The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon

L. S. Robertson;R. Brindos;K. S. Jones;M. E. Law

96
Citations
Effects of hydrostatic pressure on dopant diffusion in silicon

Heemyong Park;Kevin S. Jones;Jim A. Slinkman;Mark E. Law

93
Citations
Notch signaling reveals developmental plasticity of Pax4+ pancreatic endocrine progenitors and shunts them to a duct fate

Amy L. Greenwood;Sui Li;Kevin Jones;Douglas A. Melton;Douglas A. Melton

87
Citations
Ion milling damage in InP and GaAs

S. J. Pearton;U. K. Chakrabarti;A. P. Perley;K. S. Jones

83
Citations
Enhanced elimination of implantation damage upon exceeding the solid solubility

Kevin S. Jones;S. Prussin;E. R. Weber

83
Citations
Nanostructured Ion Beam-Modified Ge Films for High Capacity Li-Ion Battery Anodes

Nicholas G. Rudawski;Blake L. Darby;Bradley R. Yates;Robert G. Elliman

0
Citations