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Kevin S. Jones publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kevin S. Jones sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

Kevin S. Jones D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kevin S. Jones sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2012 - Fellow of the Materials Research Society
  • 2009 - ASM Fellow For scientific contributions to the understanding of how point and line defects influence the performance of ion implanted semiconductors.

Overview

Kevin S. Jones is affiliated with the University of Florida in the United States and specializes in research at the intersection of engineering and materials science. Their work predominantly focuses on semiconductor materials and devices, nanowire synthesis and applications, and advanced fabrication techniques in electronic materials.

The primary fields of study for this researcher include:

  • Engineering
  • Materials Science

Within these fields, they focus on subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering
  • Polymers and Plastics

Key topics covered in their publications are:

  • Semiconductor materials and devices
  • Nanowire synthesis and applications
  • Silicon nanostructures and photoluminescence
  • Supercapacitor materials and fabrication
  • Conducting polymers and applications
  • Silicon and solar cell technologies
  • GaN-based semiconductor devices and materials

Kevin S. Jones has published in several frequent venues, including:

  • Journal of Applied Physics
  • Nano Letters
  • Journal of Power Sources
  • Applied Surface Science
  • SAE technical papers on CD-ROM/SAE technical paper series

Notable recent publications by Jones include:

  • Ultralow Voltage GaN Vacuum Nanodiodes in Air (2021) in Nano Letters
  • Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid (2021) in Nanotechnology
  • On the rate capability of supercapacitors characterized by a constant-phase element (2021) in Journal of Power Sources
  • Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures (2020) in Ultramicroscopy
  • Single step bonding of thick anodized aluminum oxide templates to silicon wafers for enhanced system-on-a-chip performance (2020) in Journal of Power Sources

Frequent co-authors collaborating with Jones include:

  • George T. Wang
  • Emily M. Turner
  • Gibson P. Scisco
  • Kirk J. Ziegler
  • Keshab Sapkota

Jones has been recognized with professional honors such as:

  • Fellow of the Materials Research Society (2012)
  • ASM Fellow (2009) for contributions related to point and line defects in ion implanted semiconductors

Best Publications

  • A systematic analysis of defects in ion-implanted silicon

    K. S. Jones;S. Prussin;E. R. Weber

  • Three-Dimensional Reconstruction of Porous LSCF Cathodes

    D. Gostovic;J. R. Smith;D. P. Kundinger;K. S. Jones

  • Ion implantation technology

    DF Downey;KS Jones;M Farley;G Ryding

  • In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

    Lin Jiang;Sheng S. Li;Nien Tze Yeh;Jen Inn Chyi

  • Ambient measurements and source apportionment of fossil fuel and biomass burning black carbon in Ontario

    R.M. Healy;U. Sofowote;Y. Su;J. Debosz

  • Transient enhanced diffusion without {311} defects in low energy B + -implanted silicon

    L. H. Zhang;K. S. Jones;P. H. Chi;D. S. Simons

  • Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs

    J.R. Smith;A. Chen;D. Gostovic;D. Hickey

  • Effect of fluorine on the diffusion of boron in ion implanted Si

    Daniel F. Downey;Judy W. Chow;Emi Ishida;Kevin S. Jones

  • {311} defects in silicon: The source of the loops

    Jinghong Li;Kevin S. Jones

  • Direct comparison of the quantized Hall resistance in gallium arsenide and silicon.

    A. Hartland;K. Jones;J. M. Williams;B. L. Gallagher

  • SiO2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

    D. A. Cole;J. R. Shallenberger;S. W. Novak;R. L. Moore

  • Amorphization and graphitization of single-crystal diamond — A transmission electron microscopy study

    D P Hickey;K S Jones;Robert Elliman

  • Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes

    N. G. Rudawski;B. L. Darby;B. R. Yates;K. S. Jones

  • The effect of implant energy, dose, and dynamic annealing on end‐of‐range damage in Ge+‐implanted silicon

    K. S. Jones;D. Venables

  • The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon

    L. S. Robertson;R. Brindos;K. S. Jones;M. E. Law

  • Effects of hydrostatic pressure on dopant diffusion in silicon

    Heemyong Park;Kevin S. Jones;Jim A. Slinkman;Mark E. Law

  • Notch signaling reveals developmental plasticity of Pax4+ pancreatic endocrine progenitors and shunts them to a duct fate

    Amy L. Greenwood;Sui Li;Kevin Jones;Douglas A. Melton;Douglas A. Melton

  • Ion milling damage in InP and GaAs

    S. J. Pearton;U. K. Chakrabarti;A. P. Perley;K. S. Jones

  • Enhanced elimination of implantation damage upon exceeding the solid solubility

    Kevin S. Jones;S. Prussin;E. R. Weber

  • Nanostructured Ion Beam-Modified Ge Films for High Capacity Li-Ion Battery Anodes

    Nicholas G. Rudawski;Blake L. Darby;Bradley R. Yates;Robert G. Elliman

Frequent Co-Authors

Stephen J. Pearton
Stephen J. Pearton University of Florida
Robert Elliman
Robert Elliman Australian National University
Fan Ren
Fan Ren University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
Paul H. Holloway
Paul H. Holloway University of Florida
Eric D. Wachsman
Eric D. Wachsman University of Maryland, College Park
John M. Poate
John M. Poate Nokia (United States)
Brent P. Gila
Brent P. Gila University of Florida
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
A. Alec Talin
A. Alec Talin Sandia National Laboratories

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