World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
19413
World Ranking
1011
National Ranking
427

Materials Science

D-Index
68
Citations
18416
World Ranking
4809
National Ranking
1276

Research.com Recognitions

  • 2015 - IEEE Founders Medal For leadership in the creation and support of innovative
  • 2008 - Fellow of the American Academy of Arts and Sciences
  • 2001 - Semiconductor Industry Association University Researcher Award
  • 1996 - Member of the National Academy of Engineering For contributions to the understanding and application of semiconductor materials and processing to integrated circuit.
  • 1985 - IEEE Fellow For contributions to understanding silicon fabrication processes, device physics, and high-voltage integrated circuits.

Overview

James D. Plummer is affiliated with Stanford University in the United States. Their research spans multiple fields including Health Professions, Computer Science, and Social Sciences, with subfields in General Health Professions, Artificial Intelligence, and Communication.

Their recent publication is titled Assessing the Impact of Simplified Language on a Patient-Facing Pharmacogenetic Report: A User Comprehension Study, published in 2025 in the Journal of Personalized Medicine.

Frequent coauthors of James D. Plummer include:

  • Russell J. Amato
  • Nicole Marie Del Toro-Pagán
  • Harris Nguyen
  • Katie Pizzolato
  • David S. Krause

Publications primarily appear in the Journal of Personalized Medicine.

The main topics covered in their work include:

  • Health Literacy and Information Accessibility
  • Text Readability and Simplification
  • Wikis in Education and Collaboration

Awards received by James D. Plummer are:

  • IEEE Founders Medal (2015) - For leadership in the creation and support of innovative
  • Fellow of the American Academy of Arts and Sciences (2008)
  • Semiconductor Industry Association University Researcher Award (2001)
  • Member of the National Academy of Engineering (1996) - For contributions to the understanding and application of semiconductor materials and processing to integrated circuit
  • IEEE Fellow (1985) - For contributions to understanding silicon fabrication processes, device physics, and high-voltage integrated circuits

Best Publications

  • Point defects and dopant diffusion in silicon

    P. M. Fahey;P. B. Griffin;J. D. Plummer

  • Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces

    S.C. Sun;J.D. Plummer

  • Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

    C.P. Auth;J.D. Plummer

  • Silicon VLSI Technology: Fundamentals, Practice and Modeling

    James D. Plummer;Michael Deal;Peter B. Griffin

  • Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results

    Hisham Z. Massoud;James D. Plummer;Eugene A. Irene

  • I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

    K. Gopalakrishnan;P.B. Griffin;J.D. Plummer

  • Thyristor-type memory device

    Farid Nemati;James D. Plummer

  • Chemistry of Si‐SiO2 interface trap annealing

    Michael L. Reed;James D. Plummer

  • Impact ionization MOS (I-MOS)-Part I: device and circuit simulations

    K. Gopalakrishnan;P.B. Griffin;J.D. Plummer

  • High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

    Yaocheng Liu;Michael D. Deal;James D. Plummer

  • Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors

    S.C. Sun;J.D. Plummer

  • VLSI Process modeling—SUPREM III

    C.P. Ho;J.D. Plummer;S.E. Hansen;R.W. Dutton

  • Activation and diffusion studies of ion-implanted p and n dopants in germanium

    Chi On Chui;Kailash Gopalakrishnan;Peter B. Griffin;James D. Plummer

  • Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

    Ant Ural;Peter B. Griffin;James D. Plummer

  • A novel high density, low voltage SRAM cell with a vertical NDR device

    F. Nemati;J.D. Plummer

  • Material and process limits in silicon VLSI technology

    J.D. Plummer;P.B. Griffin

  • Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials

    Gary B. Bronner;James D. Plummer

  • Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms

    Hisham Z. Massoud;James D. Plummer;Eugene A. Irene

  • Silicon VLSI Technology

    James D. Plummer;Michael Deal;Peter D. Griffin

  • Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors

    G.L. Patton;J.C. Bravman;J.D. Plummer

  • Monolithic 3D Integrated Circuits

    S. Wong;A. El-Gamal;P. Griffin;Y. Nishi

Frequent Co-Authors

James D. Meindl
James D. Meindl Georgia Institute of Technology
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
S. Simon Wong
S. Simon Wong Stanford University
Robert W. Dutton
Robert W. Dutton Stanford University
William D. Nix
William D. Nix Stanford University
Yoshio Nishi
Yoshio Nishi Stanford University
Mostafa Ronaghi
Mostafa Ronaghi Dynamics Special Purpose Corp.
Jason C. S. Woo
Jason C. S. Woo University of California, Los Angeles
Juan Rivas-Davila
Juan Rivas-Davila Stanford University
Eduard Arzt
Eduard Arzt University of California, San Diego

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