D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 57 Citations 13,972 273 World Ranking 1153 National Ranking 534
Materials Science D-index 61 Citations 14,324 296 World Ranking 4067 National Ranking 1177

Research.com Recognitions

Awards & Achievements

2015 - IEEE Founders Medal For leadership in the creation and support of innovative

2008 - Fellow of the American Academy of Arts and Sciences

2001 - Semiconductor Industry Association University Researcher Award

1996 - Member of the National Academy of Engineering For contributions to the understanding and application of semiconductor materials and processing to integrated circuit.

1985 - IEEE Fellow For contributions to understanding silicon fabrication processes, device physics, and high-voltage integrated circuits.

Overview

What is he best known for?

The fields of study James D. Plummer is best known for:

  • Silicon
  • Oxygen
  • Hydrogen

In his research, James D. Plummer undertakes multidisciplinary study on Silicon and Phosphorus. James D. Plummer applies his multidisciplinary studies on Phosphorus and Silicon in his research. His Organic chemistry study frequently draws connections between adjacent fields such as Argon. His study in Atmospheric temperature range extends to Thermodynamics with its themes. His Optoelectronics study typically links adjacent topics like Getter. His Getter study frequently draws parallels with other fields, such as Optoelectronics. James D. Plummer combines Metallurgy and Chemical engineering in his research. He undertakes interdisciplinary study in the fields of Chemical engineering and Metallurgy through his research. In his research, James D. Plummer performs multidisciplinary study on Nanotechnology and Transmission electron microscopy.

His most cited work include:

  • Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental Results (275 citations)
  • Activation and diffusion studies of ion-implanted p and n dopants in germanium (265 citations)
  • Chemistry of Si‐SiO2interface trap annealing (245 citations)

What are the main themes of his work throughout his whole career to date

His Metallurgy study spans across into areas like Chemical engineering, Metal and Aluminium. In his research, James D. Plummer performs multidisciplinary study on Chemical engineering and Metallurgy. His Organic chemistry research spans across into areas like Inorganic chemistry and Oxygen. His multidisciplinary approach integrates Inorganic chemistry and Organic chemistry in his work. James D. Plummer combines Oxygen and Silicon in his research. His work in Thermodynamics is not limited to one particular discipline; it also encompasses Diffusion and Thermal. James D. Plummer undertakes interdisciplinary study in the fields of Diffusion and Thermodynamics through his research. James D. Plummer connects relevant research areas such as Layer (electronics) and Thin film in the realm of Nanotechnology. His study on Layer (electronics) is mostly dedicated to connecting different topics, such as Nanotechnology.

James D. Plummer most often published in these fields:

  • Silicon (67.92%)
  • Metallurgy (64.15%)
  • Optoelectronics (62.26%)

What were the highlights of his more recent work (between 2014-2020)?

  • Optoelectronics (60.00%)
  • Electrical engineering (60.00%)
  • Converters (40.00%)

In recent works James D. Plummer was focusing on the following fields of study:

As part of his studies on Optoelectronics, James D. Plummer often connects relevant areas like Lithography. James D. Plummer performs integrative Electrical engineering and Electronic engineering research in his work. He undertakes interdisciplinary study in the fields of Electronic engineering and Electrical engineering through his research. Much of his study explores Converters relationship to Voltage. In his research, he undertakes multidisciplinary study on Voltage and Capacitance. His Capacitance study frequently draws connections between adjacent fields such as Electrode. As part of his studies on Electrode, James D. Plummer often connects relevant subjects like Diffusion capacitance. He incorporates Diffusion capacitance and Diode in his studies. In his study, James D. Plummer carries out multidisciplinary Diode and Schottky diode research.

Between 2014 and 2020, his most popular works were:

  • Active Power Device Selection in High- and Very-High-Frequency Power Converters (49 citations)
  • <inline-formula> <tex-math notation="LaTeX">${C}_{\textsf{OSS}}$ </tex-math> </inline-formula> Measurements for Superjunction MOSFETs: Limitations and Opportunities (25 citations)
  • Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes (22 citations)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Point defects and dopant diffusion in silicon

P. M. Fahey;P. B. Griffin;J. D. Plummer.
Reviews of Modern Physics (1989)

1763 Citations

Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces

S.C. Sun;J.D. Plummer.
IEEE Journal of Solid-state Circuits (1980)

1113 Citations

Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

C.P. Auth;J.D. Plummer.
IEEE Electron Device Letters (1997)

712 Citations

Silicon VLSI Technology: Fundamentals, Practice and Modeling

James D. Plummer;Michael Deal;Peter B. Griffin.
(2000)

689 Citations

Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results

Hisham Z. Massoud;James D. Plummer;Eugene A. Irene.
Journal of The Electrochemical Society (1985)

451 Citations

Thyristor-type memory device

Farid Nemati;James D. Plummer.
(2005)

437 Citations

I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

K. Gopalakrishnan;P.B. Griffin;J.D. Plummer.
international electron devices meeting (2002)

420 Citations

Chemistry of Si‐SiO2 interface trap annealing

Michael L. Reed;James D. Plummer.
Journal of Applied Physics (1988)

363 Citations

High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

Yaocheng Liu;Michael D. Deal;James D. Plummer.
Applied Physics Letters (2004)

334 Citations

VLSI Process modeling&#8212;SUPREM III

C.P. Ho;J.D. Plummer;S.E. Hansen;R.W. Dutton.
IEEE Transactions on Electron Devices (1983)

312 Citations

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