2015 - IEEE Founders Medal For leadership in the creation and support of innovative
2008 - Fellow of the American Academy of Arts and Sciences
2001 - Semiconductor Industry Association University Researcher Award
1996 - Member of the National Academy of Engineering For contributions to the understanding and application of semiconductor materials and processing to integrated circuit.
1985 - IEEE Fellow For contributions to understanding silicon fabrication processes, device physics, and high-voltage integrated circuits.
In his research, James D. Plummer undertakes multidisciplinary study on Silicon and Phosphorus. James D. Plummer applies his multidisciplinary studies on Phosphorus and Silicon in his research. His Organic chemistry study frequently draws connections between adjacent fields such as Argon. His study in Atmospheric temperature range extends to Thermodynamics with its themes. His Optoelectronics study typically links adjacent topics like Getter. His Getter study frequently draws parallels with other fields, such as Optoelectronics. James D. Plummer combines Metallurgy and Chemical engineering in his research. He undertakes interdisciplinary study in the fields of Chemical engineering and Metallurgy through his research. In his research, James D. Plummer performs multidisciplinary study on Nanotechnology and Transmission electron microscopy.
His Metallurgy study spans across into areas like Chemical engineering, Metal and Aluminium. In his research, James D. Plummer performs multidisciplinary study on Chemical engineering and Metallurgy. His Organic chemistry research spans across into areas like Inorganic chemistry and Oxygen. His multidisciplinary approach integrates Inorganic chemistry and Organic chemistry in his work. James D. Plummer combines Oxygen and Silicon in his research. His work in Thermodynamics is not limited to one particular discipline; it also encompasses Diffusion and Thermal. James D. Plummer undertakes interdisciplinary study in the fields of Diffusion and Thermodynamics through his research. James D. Plummer connects relevant research areas such as Layer (electronics) and Thin film in the realm of Nanotechnology. His study on Layer (electronics) is mostly dedicated to connecting different topics, such as Nanotechnology.
As part of his studies on Optoelectronics, James D. Plummer often connects relevant areas like Lithography. James D. Plummer performs integrative Electrical engineering and Electronic engineering research in his work. He undertakes interdisciplinary study in the fields of Electronic engineering and Electrical engineering through his research. Much of his study explores Converters relationship to Voltage. In his research, he undertakes multidisciplinary study on Voltage and Capacitance. His Capacitance study frequently draws connections between adjacent fields such as Electrode. As part of his studies on Electrode, James D. Plummer often connects relevant subjects like Diffusion capacitance. He incorporates Diffusion capacitance and Diode in his studies. In his study, James D. Plummer carries out multidisciplinary Diode and Schottky diode research.
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Point defects and dopant diffusion in silicon
P. M. Fahey;P. B. Griffin;J. D. Plummer.
Reviews of Modern Physics (1989)
Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces
S.C. Sun;J.D. Plummer.
IEEE Journal of Solid-state Circuits (1980)
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
C.P. Auth;J.D. Plummer.
IEEE Electron Device Letters (1997)
Silicon VLSI Technology: Fundamentals, Practice and Modeling
James D. Plummer;Michael Deal;Peter B. Griffin.
Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results
Hisham Z. Massoud;James D. Plummer;Eugene A. Irene.
Journal of The Electrochemical Society (1985)
Thyristor-type memory device
Farid Nemati;James D. Plummer.
I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q
K. Gopalakrishnan;P.B. Griffin;J.D. Plummer.
international electron devices meeting (2002)
Chemistry of Si‐SiO2 interface trap annealing
Michael L. Reed;James D. Plummer.
Journal of Applied Physics (1988)
High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates
Yaocheng Liu;Michael D. Deal;James D. Plummer.
Applied Physics Letters (2004)
VLSI Process modeling—SUPREM III
C.P. Ho;J.D. Plummer;S.E. Hansen;R.W. Dutton.
IEEE Transactions on Electron Devices (1983)
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