Masanobu Miyao

Overview

Best Publications

• Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

  Kaoru Toko;Isakane Nakao;Taizoh Sadoh;Takashi Noguchi

  168
  Citations

• Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium

  Nobuyuki Sugii;Kiyokazu Nakagawa;Shinya Yamaguchi;Masanobu Miyao

  160
  Citations

• Transistor provided with strained germanium layer

  Eiichi Murakami;Kiyokazu Nakagawa;Takashi Ohshima;Hiroyuki Hitachi Daiyon Kyoshinryo Eto

  156
  Citations

• Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

  Y. Ando;K. Hamaya;K. Kasahara;Y. Kishi

  151
  Citations

• Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

  Y. Ando;K. Hamaya;K. Kasahara;Y. Kishi

  149
  Citations

• Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

  Masashi Kurosawa;Naoyuki Kawabata;Taizoh Sadoh;Masanobu Miyao

  142
  Citations

• Transient structural relaxation of amorphous silicon

  W. Sinke;T. Warabisako;M. Miyao;T. Tokuyama

  134
  Citations

• Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

  T. Sadoh;H. Kamizuru;A. Kenjo;M. Miyao

  129
  Citations

• Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

  Nobuyuki Sugii;Kiyokazu Nakagawa;Shinya Yamaguchi;Masanobu Miyao

  128
  Citations

• Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy

  Kiyokazu Nakagawa;Masanobu Miyao

  126
  Citations

• Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors

  Takashi Kimura;Naoki Hashimoto;Shinya Yamada;Masanobu Miyao

  123
  Citations

• Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy

  Masanobu Miyao;Takanori Tanaka;Kaoru Toko;Masanori Tanaka

  122
  Citations

• Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

  K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa

  115
  Citations

• High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

  Masanobu Miyao;Kaoru Toko;Takanori Tanaka;Taizoh Sadoh

  108
  Citations

• Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

  K. Hamaya;K. Ueda;Y. Kishi;Y. Ando

  107
  Citations

• Epitaxial ferromagnetic Fe3Si∕Si(111) structures with high-quality heterointerfaces

  K. Hamaya;K. Ueda;Y. Kishi;Y. Ando

  101
  Citations

• Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

  K. Yamane;K. Hamaya;Y. Ando;Y. Enomoto

  100
  Citations

• High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

  Masanobu Miyao;Eiichi Murakami;Hiroyuki Etoh;Kiyokazu Nakagawa

  98
  Citations

• Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3 xMnxSi Epilayers Grown on Ge(111)

  K. Hamaya;K. Hamaya;H. Itoh;O. Nakatsuka;K. Ueda

  97
  Citations

• Electrical properties for poly-Ge films fabricated by pulsed laser annealing

  Hajime Watakabe;Toshiyuki Sameshima;Hiroshi Kanno;Masanobu Miyao

  85
  Citations

• Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co 2 FeSi and Fe 3 Si

  K. Hamaya;K. Hamaya;N. Hashimoto;S. Oki;S. Yamada

  79
  Citations