Masanobu Miyao

Masanobu Miyao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Masanobu Miyao sits on this spectrum.

Masanobu Miyao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Masanobu Miyao sits on this spectrum.

Overview

Best Publications

• Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

  Kaoru Toko;Isakane Nakao;Taizoh Sadoh;Takashi Noguchi

  168
  Citations

• Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium

  Nobuyuki Sugii;Kiyokazu Nakagawa;Shinya Yamaguchi;Masanobu Miyao

  160
  Citations

• Transistor provided with strained germanium layer

  Eiichi Murakami;Kiyokazu Nakagawa;Takashi Ohshima;Hiroyuki Hitachi Daiyon Kyoshinryo Eto

  156
  Citations

• Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

  Y. Ando;K. Hamaya;K. Kasahara;Y. Kishi

  151
  Citations

• Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

  Y. Ando;K. Hamaya;K. Kasahara;Y. Kishi

  149
  Citations

• Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

  Masashi Kurosawa;Naoyuki Kawabata;Taizoh Sadoh;Masanobu Miyao

  142
  Citations

• Transient structural relaxation of amorphous silicon

  W. Sinke;T. Warabisako;M. Miyao;T. Tokuyama

  134
  Citations

• Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

  T. Sadoh;H. Kamizuru;A. Kenjo;M. Miyao

  129
  Citations

• Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

  Nobuyuki Sugii;Kiyokazu Nakagawa;Shinya Yamaguchi;Masanobu Miyao

  128
  Citations

• Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy

  Kiyokazu Nakagawa;Masanobu Miyao

  126
  Citations

• Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors

  Takashi Kimura;Naoki Hashimoto;Shinya Yamada;Masanobu Miyao

  123
  Citations

• Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy

  Masanobu Miyao;Takanori Tanaka;Kaoru Toko;Masanori Tanaka

  122
  Citations

• Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

  K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa

  115
  Citations

• High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

  Masanobu Miyao;Kaoru Toko;Takanori Tanaka;Taizoh Sadoh

  108
  Citations

• Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

  K. Hamaya;K. Ueda;Y. Kishi;Y. Ando

  107
  Citations

• Epitaxial ferromagnetic Fe3Si∕Si(111) structures with high-quality heterointerfaces

  K. Hamaya;K. Ueda;Y. Kishi;Y. Ando

  101
  Citations

• Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

  K. Yamane;K. Hamaya;Y. Ando;Y. Enomoto

  100
  Citations

• High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

  Masanobu Miyao;Eiichi Murakami;Hiroyuki Etoh;Kiyokazu Nakagawa

  98
  Citations

• Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3 xMnxSi Epilayers Grown on Ge(111)

  K. Hamaya;K. Hamaya;H. Itoh;O. Nakatsuka;K. Ueda

  97
  Citations

• Electrical properties for poly-Ge films fabricated by pulsed laser annealing

  Hajime Watakabe;Toshiyuki Sameshima;Hiroshi Kanno;Masanobu Miyao

  85
  Citations

• Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co 2 FeSi and Fe 3 Si

  K. Hamaya;K. Hamaya;N. Hashimoto;S. Oki;S. Yamada

  79
  Citations