World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
9743
World Ranking
1805
National Ranking
61

Overview

Hongyong Zhang is affiliated with the Tokyo Institute of Technology in Japan. Their research primarily spans the field of Economics, Econometrics and Finance, with a focus on several related subfields including Economics and Econometrics, General Economics, Econometrics and Finance, Strategy and Management, Political Science and International Relations, and Sociology and Political Science.

The scientist's work addresses a variety of topics, notably:

  • Global trade and economics
  • International Business and FDI
  • Firm Innovation and Growth
  • COVID-19 Pandemic Impacts
  • Market Dynamics and Volatility
  • Geotechnical and Geomechanical Engineering
  • Economic Growth and Productivity

Hongyong Zhang has contributed to multiple scholarly publications, with frequent appearances in journals such as:

  • SSRN Electronic Journal
  • China Economic Review
  • Computers and Geotechnics
  • The International Economy
  • Toxicology

Several recent papers authored or co-authored by Hongyong Zhang include:

  • The value-added tax reform and labor market outcomes: Firm-level evidence from China (2021), China Economic Review
  • AmphiLight (2021), GetMobile Mobile Computing and Communications
  • MatDEM-fast matrix computing of the discrete element method (2021), Earthquake research advances
  • Micro mechanism investigation of hydraulic fracturing process based a fluid-solid coupling discrete element model (2024), Computers and Geotechnics
  • A critical state constitutive model for unsaturated structured soils (2022), Computers and Geotechnics

Frequent co-authors that collaborate with Hongyong Zhang include:

  • Cheng Chen
  • Asei Ito
  • Jaehwan Lim
  • Tatsuro Senga
  • Chang Sun

Best Publications

  • Semiconductor, semiconductor device, and method for fabricating the same

    Shunpei Yamazaki;Yasuhiko Takemura;Hongyong Zhang;Toru Takayama

  • Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode

    Shunpei Yamazaki;Yasuhiko Takemura;Hongyong Zhang

  • Method for mfg. semiconductor device

    Hongyong Zhang;Akira Koyama;Yasuhiko Takemura

  • Process for laser processing and apparatus for use in the same

    Hongyong Zhang;Shunpei Yamazaki;Yasuhiko Takemura

  • Active Matry Display

    Hisashi Ohtani;Akiharu Miyanaga;Takeshi Fukunaga;Hongyong Zhang

  • Method for manufacturing a semiconductor device using a catalyst

    Hisashi Ohtani;Akiharu Miyanaga;Hongyong Zhang;Naoaki Yamaguchi

  • Method for annealing a semiconductor

    Hongyong Zhang;Naoto Kusumoto

  • Semiconductor device having a thin film transistor

    Hongyong Zhang;Naoto Kusumoto

  • Transistor and semiconductor circuit

    Hongyong Zhang;Uochi Hideki;Toru;Takayama

  • Transistor and process for fabricating the same

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura

  • Integral-type liquid crystal panel with image sensor function

    Hongyong Zhang;Masayuki Sakakura;Hideaki Kuwabara

  • Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Thin film transistor and semiconductor device including a laser crystallized semiconductor

    Shunpei Yamazaki;Hongyong Zhang;Naoto Kusumoto;Yasuhiko Takemura

  • Transistor and making method thereof

    Hongyong Zhang;Akira Takayama;Yasuhiko Takemura

  • Method for forming a field-effect transistor including anodic oxidation of the gate

    Shunpei Yamazaki;Akira Mase;Masaaki Hiroki;Yasuhiko Takemura

  • Semiconductor device and manufacture method

    Hongyong Zhang;Hidetaka Uochi;Kokuchi;Tatsu Kokuchi

  • Active matrix display and electrooptical device

    Hongyong Zhang

  • Active matrix display device including a transistor

    Shunpei Yamazaki;Akira Mase;Masaaki Hiroki;Yasuhiko Takemura

  • Process for fabricating semiconductor and process for fabricating semiconductor device

    Toru Takayama;Hongyong Zhang;Shunpei Yamazaki;Yasuhiko Takemura

  • Method of preparing a semiconductor having a controlled crystal orientation

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

Frequent Co-Authors

Shunpei Yamazaki
Shunpei Yamazaki Semiconductor Energy Laboratory (Japan)
Jun Koyama
Jun Koyama Semiconductor Energy Laboratory (Japan)

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