World's Best Scientists 2026 revealed!
Yasuhiko Takemura

Yasuhiko Takemura

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
9794
World Ranking
1685
National Ranking
59

Yasuhiko Takemura publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yasuhiko Takemura sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 221 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yasuhiko Takemura D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yasuhiko Takemura sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Silicon

The scientist’s investigation covers issues in Thin-film transistor, Semiconductor, Optoelectronics, Amorphous silicon and Semiconductor device. Crystalline silicon and Porosity is closely connected to Electronic engineering in his research, which is encompassed under the umbrella topic of Thin-film transistor. His Semiconductor research is multidisciplinary, incorporating perspectives in Substrate and Silicon.

His Optoelectronics study incorporates themes from Layer, Active matrix, Electrical engineering and Gate oxide. As part of one scientific family, Yasuhiko Takemura deals mainly with the area of Amorphous silicon, narrowing it down to issues related to the Chemical engineering, and often Nanocrystalline silicon. His Semiconductor device research focuses on Thin film and how it connects with Hybrid silicon laser and Laser.

His most cited work include:

  • Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films (161 citations)
  • Electro-optical device and process for fabricating the same and method of driving the same (136 citations)
  • Semiconductor device employing crystallization catalyst (133 citations)

What are the main themes of his work throughout his whole career to date?

Yasuhiko Takemura mostly deals with Optoelectronics, Thin-film transistor, Semiconductor, Semiconductor device and Amorphous silicon. Yasuhiko Takemura has researched Optoelectronics in several fields, including Substrate, Electronic engineering, Electrical engineering and Thin film. As a part of the same scientific study, Yasuhiko Takemura usually deals with the Thin-film transistor, concentrating on Gate oxide and frequently concerns with Gate dielectric.

Yasuhiko Takemura works mostly in the field of Semiconductor, limiting it down to topics relating to Integrated circuit and, in certain cases, Electronic circuit, as a part of the same area of interest. His study looks at the relationship between Semiconductor device and fields such as Amorphous semiconductors, as well as how they intersect with chemical problems. In his work, Nickel is strongly intertwined with Crystallization, which is a subfield of Amorphous silicon.

He most often published in these fields:

  • Optoelectronics (68.05%)
  • Thin-film transistor (43.79%)
  • Semiconductor (40.24%)

What were the highlights of his more recent work (between 1999-2010)?

  • Optoelectronics (68.05%)
  • Thin-film transistor (43.79%)
  • Semiconductor device (31.95%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Thin-film transistor, Semiconductor device, Semiconductor and Amorphous silicon. His research in Optoelectronics intersects with topics in Transistor, Gate oxide, Electronic engineering and Active matrix. His Thin-film transistor research incorporates themes from Thin film, Substrate and Crystalline silicon.

His study explores the link between Semiconductor device and topics such as Laser that cross with problems in Manufacturing process and Robotic arm. His studies in Semiconductor integrate themes in fields like Crystallinity and Integrated circuit. His biological study spans a wide range of topics, including Doping, Silicon oxide, Oxide thin-film transistor, Metallurgy and Crystal.

Between 1999 and 2010, his most popular works were:

  • Active matrix display device including a transistor (71 citations)
  • Semiconductor device structure (28 citations)
  • MIS semiconductor device having an LDD structure and a manufacturing method therefor (23 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Silicon

Yasuhiko Takemura mainly focuses on Optoelectronics, Thin-film transistor, Semiconductor device, Gate oxide and Silicon. His Optoelectronics research incorporates elements of Transistor and Electronic engineering. His Transistor study integrates concerns from other disciplines, such as Active matrix and Display device.

His work deals with themes such as Substrate, Amorphous silicon and Crystalline silicon, which intersect with Thin-film transistor. Gate oxide is a subfield of Electrical engineering that Yasuhiko Takemura investigates. His Silicon research integrates issues from Coating and Semiconductor.

Best Publications

  • Semiconductor, semiconductor device, and method for fabricating the same

    Shunpei Yamazaki;Yasuhiko Takemura;Hongyong Zhang;Toru Takayama

  • Active matrix display device

    Shunpei Yamazaki;Jun Koyama;Yasuhiko Takemura

  • Semiconductor device/circuit having at least partially crystallized semiconductor layer

    Toru Takayama;Yasuhiko Takemura

  • Method of manufacturing a display device having a driver circuit attached to a display substrate

    Shunpei Yamazaki;Yasuhiko Takemura;Setsuo Nakajima;Yasuyuki Arai

  • Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films

    Hiroki Adachi;Akira Takenouchi;Takeshi Fukada;Hiroshi Uehara

  • Transistor and semiconductor circuit

    Hongyong Zhang;Uochi Hideki;Toru;Takayama

  • Display device and method of fabricating the same

    Shunpei Yamazaki;Yasuhiko Takemura;Setsuo Nakajima;Yasuyuki Arai

  • Transistor and process for fabricating the same

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura

  • Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Electro-optical device and process for fabricating the same and method of driving the same

    Shunpei Yamazaki;Yasuhiko Takemura

  • Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region

    Naoto Kusumoto;Yasuhiko Takemura;Hisashi Ohtani

  • Semiconductor device and process for fabricating the same

    Yasuhiko Takemura;Hiroki Adachi

  • Thin film transistor and semiconductor device including a laser crystallized semiconductor

    Shunpei Yamazaki;Hongyong Zhang;Naoto Kusumoto;Yasuhiko Takemura

  • Method for forming a field-effect transistor including anodic oxidation of the gate

    Shunpei Yamazaki;Akira Mase;Masaaki Hiroki;Yasuhiko Takemura

  • Semiconductor device and manufacture method

    Hongyong Zhang;Hidetaka Uochi;Kokuchi;Tatsu Kokuchi

  • Active matrix display and electrooptical device

    Hongyong Zhang

  • Active matrix display device including a transistor

    Shunpei Yamazaki;Akira Mase;Masaaki Hiroki;Yasuhiko Takemura

  • Process for fabricating semiconductor and process for fabricating semiconductor device

    Toru Takayama;Hongyong Zhang;Shunpei Yamazaki;Yasuhiko Takemura

  • Method of preparing a semiconductor having a controlled crystal orientation

    Hongyong Zhang;Toru Takayama;Yasuhiko Takemura;Akiharu Miyanaga

  • Semiconductor device and method for fabricating the same

    Zhang Hongyong;Ohnuma Hideto;Yamaguchi Naoaki;Takemura Yasuhiko

Frequent Co-Authors

Shunpei Yamazaki
Shunpei Yamazaki Semiconductor Energy Laboratory (Japan)
Hongyong Zhang
Hongyong Zhang Tokyo Institute of Technology
Hisashi Ohtani
Hisashi Ohtani Semiconductor Energy Laboratory (Japan)

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