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Jang-Yeon Kwon

Jang-Yeon Kwon

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
14159
World Ranking
3451
National Ranking
104

Overview

Jang-Yeon Kwon is affiliated with Yonsei University in South Korea. Their research spans across the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Materials Chemistry, Polymers and Plastics, and Biomedical Engineering.

The scientist's work covers a range of main topics including Advanced Memory and Neural Computing, Thin-Film Transistor Technologies, Photoreceptor and optogenetics research, Neuroscience and Neural Engineering, Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, and ZnO doping and properties.

Among recent publications are:

  • "Circularly polarized light-sensitive, hot electron transistor with chiral plasmonic nanoparticles", 2022, Nature Communications
  • "Proton-enabled activation of peptide materials for biological bimodal memory", 2020, Nature Communications
  • "A Review on the Recent Advancements in Tin Oxide-Based Thin-Film Transistors for Large-Area Electronics", 2020, Journal of Electronic Materials
  • "A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing", 2023, APL Materials
  • "Energy scavenging artificial nervous system for detecting rotational movement", 2020, Nano Energy

Frequent coauthors in Kwon's research include Min-Kyu Song, Jeong Hyun Yoon, Young-Woong Song, Seok Daniel Namgung, and Jeong-Min Park.

Key publication venues where Kwon has contributed multiple works are:

  • Applied Surface Science
  • Nature Communications
  • Journal of Electronic Materials
  • SSRN Electronic Journal
  • Journal of Alloys and Compounds

Best Publications

  • Thin film transistors and methods of manufacturing the same

    Myung-kwan Ryu;Tae-Sang Kim;Jang-yeon Kwon;Kyung-bae Park

  • Full-colour quantum dot displays fabricated by transfer printing

    Tae Ho Kim;Kyung Sang Cho;Eun Kyung Lee;Sang Jin Lee

  • 42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

    Je Hun Lee;Do Hyun Kim;Dong Ju Yang;Sun Young Hong

  • 42.4L: Late‐News Paper: 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga2O3‐In2O3‐ZnO) TFT

    Kyoung Seok Son;Tae Sang Kim;Ji Sim Jung;Myung Kwan Ryu

  • The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

    Kwang Hee Lee;Ji Sim Jung;Kyoung Seok Son;Joon Seok Park

  • Review paper: Transparent amorphous oxide semiconductor thin film transistor

    Jang Yeon Kwon;Do Joong Lee;Ki Bum Kim

  • Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

    Jang Yeon Kwon;Kyoung Seok Son;Ji Sim Jung;Tae Sang Kim

  • Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films

    Do Joong Lee;Hyun Mi Kim;Jang Yeon Kwon;Hyoji Choi

  • Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

    Jang Yeon Kwon;Jae Kyeong Jeong

  • Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

    Shanmugam Parthiban;Jang Yeon Kwon

  • Verfahren zur Herstellung eines Dünnschichttransistors aus einem Oxidhalbleiter

    Lee Sang-Yoon;Park Kyung-Bae;Kwon Jang-Yeon;Jung Ji-Sim

  • Oxide semiconductor transistor and method of manufacturing the same

    Kyoung-seok Son;Tae-Sang Kim;Jang-yeon Kwon;Ji-sim Jung

  • Honeycomb-Like Interconnected Network of Nickel Phosphide Heteronanoparticles with Superior Electrochemical Performance for Supercapacitors.

    Shude Liu;Kalimuthu Vijaya Sankar;Aniruddha Kundu;Ming Ma

  • DISPLAY DEVICE USING OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR

    Son Kyung Seok;Lee Sang Yoon;Ryu Myung Kwan;Kim Tae Sang

  • Method for producing polycrystal silicon thin film and method for producing transistor using the same

    Nyon Kwon Jang;Gv Han Min;Yong Cho Sai;Takashi Noguchi

  • The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

    Jang Yeon Kwon;Ji Sim Jung;Kyoung Seok Son;Kwang Hee Lee

  • METHOD OF MANUFACTURING ZnO-BASED THIN FILM TRANSISTOR

    Myung-kwan Ryu;Sang-yoon Lee;Je-Hun Lee;Tae-Sang Kim

  • A Highly Sensitive Tactile Sensor Using a Pyramid-Plug Structure for Detecting Pressure, Shear Force, and Torsion

    Daehwan Choi;Sukjin Jang;Joo Sung Kim;Hyung Jun Kim

  • Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

    Mami Fujii;Hiroshi Yano;Tomoaki Hatayama;Yukiharu Uraoka

  • Characteristics of Double-Gate Ga–In–Zn–O Thin-Film Transistor

    Kyoung-Seok Son;Ji-Sim Jung;Kwang-Hee Lee;Tae-Sang Kim

  • Semiconductor device having quantum dots

    Ki Bum Kim;Tae Sik Yoon;Jang Yeon Kwon

Frequent Co-Authors

sang yoon lee
sang yoon lee Yonsei University
Ki-Bum Kim
Ki-Bum Kim Seoul National University
Young-soo Park
Young-soo Park Korea University
Dukhyun Choi
Dukhyun Choi Kyung Hee University
Jong Min Kim
Jong Min Kim University of Cambridge
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Soo-Hyun Kim
Soo-Hyun Kim Yeungnam University
Rino Choi
Rino Choi Inha University
Do Hwan Kim
Do Hwan Kim Hanyang University
Jin-Seong Park
Jin-Seong Park Hanyang University

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