World's Best Scientists 2026 revealed!
Award Badge
Materials Science
Japan
2022

D-Index & Metrics

Materials Science

D-Index
102
Citations
64312
World Ranking
937
National Ranking
31

Research.com Recognitions

  • 2022 - Research.com Materials Science in Japan Leader Award

Overview

Toshio Kamiya is affiliated with the Tokyo Institute of Technology in Japan. Their research primarily focuses on materials science and engineering, with a significant concentration in materials chemistry and electrical and electronic engineering. Their work spans various subfields, including electronic, optical and magnetic materials, condensed matter physics, and atomic and molecular physics and optics.

The scientist's recent publications reflect contributions to the understanding and development of oxide materials, thermoelectric performance, and perovskite-related compounds. Among the notable papers are:

  • Shallow Valence Band of Rutile GeO2 and P-type Doping (2020), published in The Journal of Physical Chemistry C
  • Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3, BaSnO3, and SrTiO3 (2020), published in Physical Review B
  • Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity (2023), published in Advanced Functional Materials
  • Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution (2022), published in Advanced Science
  • p-Type Transparent Quadruple Perovskite Halide Conductors: Fact or Fiction? (2020), published in Advanced Functional Materials

Kamiya collaborates frequently with a number of researchers, including Takayoshi Katase, Hideo Hosono, Xinyi He, Keisuke Ide, and Hidenori Hiramatsu. These collaborations contribute to multiple publications and advancing research in related topics.

Their work is regularly published in several venues specialized in materials science and applied physics. Frequent publication outlets include:

  • Advanced Functional Materials
  • ACS Applied Electronic Materials
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Advanced Science

Kamiya's main fields of study encompass:

  • Materials Science
  • Engineering

Within these fields, their subfields of focus cover:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

The main research topics addressed in their work include:

  • Advanced Thermoelectric Materials and Devices
  • Electronic and Structural Properties of Oxides
  • Magnetic and Transport Properties of Perovskites and Related Materials
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • Advanced Condensed Matter Physics
  • Ga2O3 and Related Materials

Best Publications

  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya

  • Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

    Hideo Hosono;Hiromichi Ota;Masahiro Orita;Kazushige Ueda

  • Amorphous oxide and field effect transistor

    Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya

  • Field effect transistor manufacturing method

    Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya

  • Present status of amorphous In–Ga–Zn–O thin-film transistors

    Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Iron-Based Layered Superconductor: LaOFeP

    Yoichi Kamihara;Hidenori Hiramatsu;Masahiro Hirano;Ryuto Kawamura

  • Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

    Kenji Nomura;Akihiro Takagi;Toshio Kamiya;Hiromichi Ohta

  • High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba

  • Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

    Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Kazushige Ueda

  • Material characteristics and applications of transparent amorphous oxide semiconductors

    Toshio Kamiya;Hideo Hosono

  • P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

    Hsing-Hung Hsieh;Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

    Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe

  • High-density electron anions in a nanoporous single crystal: [Ca24Al28O64]4+(4e-).

    Satoru Matsuishi;Yoshitake Toda;Masashi Miyakawa;Katsuro Hayashi

  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

    T. Kamiya;K. Nomura;H. Hosono

  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

    Hiromichi Ohta;Masahiro Hirano;Ken Nakahara;Hideaki Maruta

  • Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

    Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Highly Efficient Blue‐Emitting Bi‐Doped Cs2SnCl6 Perovskite Variant: Photoluminescence Induced by Impurity Doping

    Zhifang Tan;Jinghui Li;Cheng Zhang;Zha Li

  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi

  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Kenji Nomura
Kenji Nomura University of California, San Diego
Hiroshi Yanagi
Hiroshi Yanagi University of Yamanashi
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Zewen Xiao
Zewen Xiao Huazhong University of Science and Technology
Satoru Matsuishi
Satoru Matsuishi National Institute for Materials Science
Katsuro Hayashi
Katsuro Hayashi Kyushu University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Toshio Kamiya

Trending Scientists