His primary areas of investigation include Optoelectronics, Thin-film transistor, Amorphous solid, Transistor and Semiconductor. His Optoelectronics research integrates issues from Field-effect transistor, Epitaxy, Oxide thin-film transistor and Sputtering. His studies in Thin-film transistor integrate themes in fields like Subthreshold conduction, Annealing and Passivation.
His Amorphous solid research includes themes of Condensed matter physics, Saturation, Analytical chemistry, Electronic engineering and Contact resistance. Toshio Kamiya has researched Transistor in several fields, including Barrier layer, Amorphous semiconductors and Plasma-enhanced chemical vapor deposition. The Semiconductor study combines topics in areas such as Thin film, Nanotechnology, Free electron model, Amorphous silicon and Hall effect.
Optoelectronics, Amorphous solid, Thin film, Condensed matter physics and Thin-film transistor are his primary areas of study. His Optoelectronics research is multidisciplinary, incorporating perspectives in Transistor, Amorphous oxide semiconductor and Oxide. His research in Amorphous solid intersects with topics in Chemical engineering and Sputtering.
Toshio Kamiya has included themes like Mineralogy, Epitaxy and Analytical chemistry in his Thin film study. Toshio Kamiya interconnects Electrical resistivity and conductivity and Density functional theory in the investigation of issues within Condensed matter physics. His biological study spans a wide range of topics, including Threshold voltage, Subthreshold conduction and Annealing.
His main research concerns Optoelectronics, Thin film, Semiconductor, Condensed matter physics and Amorphous solid. The study incorporates disciplines such as Transistor, Amorphous oxide semiconductor, Thin-film transistor and Metal–insulator transition in addition to Optoelectronics. The Thin film study which covers Photoemission spectroscopy that intersects with Substrate.
His Semiconductor study combines topics from a wide range of disciplines, such as Doping, Electronic structure, Perovskite, Amorphous oxide and Engineering physics. His Condensed matter physics research is multidisciplinary, relying on both Crystal structure, Density functional theory and Free electron model. His Amorphous solid research incorporates elements of Carbon film, Gallium oxide, Chemical engineering and Analytical chemistry.
His primary areas of investigation include Semiconductor, Amorphous solid, Optoelectronics, Condensed matter physics and Perovskite. In his research, Phonon, Flux method and Phonon scattering is intimately related to Electron mobility, which falls under the overarching field of Semiconductor. His Amorphous solid study integrates concerns from other disciplines, such as Relaxation, Muon spin spectroscopy, Amorphous oxide semiconductor, Thin film and Chemical engineering.
His Optoelectronics research includes elements of Organic electronics, Exciton, Thin-film transistor and OLED. Toshio Kamiya combines subjects such as Excess oxygen, Oxygen vacancy and Amorphous oxide with his study of Thin-film transistor. His Condensed matter physics research incorporates themes from Effective mass, Diamagnetism, Free electron model and Electrical resistivity and conductivity.
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Electric elements and circuits utilizing amorphous oxides
Katsumi Abe;Hideo Hosono;Toshio Kamiya;Kenji Nomura.
(2005)
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba.
Applied Physics Letters (2006)
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Kazushige Ueda.
Applied Physics Letters (2004)
Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono.
Applied Physics Letters (2008)
Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO
Hiromichi Ohta;Masahiro Hirano;Ken Nakahara;Hideaki Maruta.
Applied Physics Letters (2003)
p-channel thin-film transistor using p-type oxide semiconductor, SnO
Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi.
Applied Physics Letters (2008)
Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga.
Applied Physics Letters (2008)
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi.
Thin Solid Films (2005)
Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Masahiro Hirano.
Applied Physics Letters (2008)
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system
Tatsuya Iwasaki;Naho Itagaki;Tohru Den;Hideya Kumomi.
Applied Physics Letters (2007)
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