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Materials Science
Japan
2022

D-Index & Metrics

Materials Science

D-Index
102
Citations
64312
World Ranking
937
National Ranking
31

Toshio Kamiya publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Toshio Kamiya sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 524 publications — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Toshio Kamiya D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Toshio Kamiya sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 102 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Japan Leader Award

Overview

Toshio Kamiya is affiliated with the Tokyo Institute of Technology in Japan. Their research primarily focuses on materials science and engineering, with a significant concentration in materials chemistry and electrical and electronic engineering. Their work spans various subfields, including electronic, optical and magnetic materials, condensed matter physics, and atomic and molecular physics and optics.

The scientist's recent publications reflect contributions to the understanding and development of oxide materials, thermoelectric performance, and perovskite-related compounds. Among the notable papers are:

  • Shallow Valence Band of Rutile GeO2 and P-type Doping (2020), published in The Journal of Physical Chemistry C
  • Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3, BaSnO3, and SrTiO3 (2020), published in Physical Review B
  • Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity (2023), published in Advanced Functional Materials
  • Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution (2022), published in Advanced Science
  • p-Type Transparent Quadruple Perovskite Halide Conductors: Fact or Fiction? (2020), published in Advanced Functional Materials

Kamiya collaborates frequently with a number of researchers, including Takayoshi Katase, Hideo Hosono, Xinyi He, Keisuke Ide, and Hidenori Hiramatsu. These collaborations contribute to multiple publications and advancing research in related topics.

Their work is regularly published in several venues specialized in materials science and applied physics. Frequent publication outlets include:

  • Advanced Functional Materials
  • ACS Applied Electronic Materials
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Advanced Science

Kamiya's main fields of study encompass:

  • Materials Science
  • Engineering

Within these fields, their subfields of focus cover:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

The main research topics addressed in their work include:

  • Advanced Thermoelectric Materials and Devices
  • Electronic and Structural Properties of Oxides
  • Magnetic and Transport Properties of Perovskites and Related Materials
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • Advanced Condensed Matter Physics
  • Ga2O3 and Related Materials

Best Publications

  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya

  • Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

    Hideo Hosono;Hiromichi Ota;Masahiro Orita;Kazushige Ueda

  • Amorphous oxide and field effect transistor

    Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya

  • Field effect transistor manufacturing method

    Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya

  • Present status of amorphous In–Ga–Zn–O thin-film transistors

    Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Iron-Based Layered Superconductor: LaOFeP

    Yoichi Kamihara;Hidenori Hiramatsu;Masahiro Hirano;Ryuto Kawamura

  • Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

    Kenji Nomura;Akihiro Takagi;Toshio Kamiya;Hiromichi Ohta

  • High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba

  • Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

    Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Kazushige Ueda

  • Material characteristics and applications of transparent amorphous oxide semiconductors

    Toshio Kamiya;Hideo Hosono

  • P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

    Hsing-Hung Hsieh;Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

    Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe

  • High-density electron anions in a nanoporous single crystal: [Ca24Al28O64]4+(4e-).

    Satoru Matsuishi;Yoshitake Toda;Masashi Miyakawa;Katsuro Hayashi

  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

    T. Kamiya;K. Nomura;H. Hosono

  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

    Hiromichi Ohta;Masahiro Hirano;Ken Nakahara;Hideaki Maruta

  • Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

    Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Highly Efficient Blue‐Emitting Bi‐Doped Cs2SnCl6 Perovskite Variant: Photoluminescence Induced by Impurity Doping

    Zhifang Tan;Jinghui Li;Cheng Zhang;Zha Li

  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi

  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Kenji Nomura
Kenji Nomura University of California, San Diego
Hiroshi Yanagi
Hiroshi Yanagi University of Yamanashi
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Zewen Xiao
Zewen Xiao Huazhong University of Science and Technology
Satoru Matsuishi
Satoru Matsuishi National Institute for Materials Science
Katsuro Hayashi
Katsuro Hayashi Kyushu University

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