World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
16059
World Ranking
11585
National Ranking
715

Hiroshi Yanagi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hiroshi Yanagi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 141 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hiroshi Yanagi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hiroshi Yanagi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Hiroshi Yanagi is affiliated with the University of Yamanashi in Japan. Their research primarily spans the fields of Engineering and Materials Science, with a strong focus in Electrical and Electronic Engineering and Materials Chemistry. Additional subfields include Atomic and Molecular Physics, and Optics, as well as Polymers and Plastics and Inorganic Chemistry.

The main research topics covered by Yanagi include Chalcogenide Semiconductor Thin Films, Quantum Dots Synthesis and Properties, Perovskite Materials and Applications, Semiconductor Materials and Interfaces, Advanced Thermoelectric Materials and Devices, Thin-Film Transistor Technologies, and Transition Metal Oxide Nanomaterials.

Yanagi has contributed to several recent publications, notably including:

  • SnS Homojunction Solar Cell with n-Type Single Crystal and p-Type Thin Film, 2021, Solar RRL
  • Current status of n-type SnS: paving the way for SnS homojunction solar cells, 2022, Journal of Physics Energy
  • n-type electrical conduction in SnS thin films, 2021, Physical Review Materials
  • Antimony nitride discovered by theoretical structure prediction, rapid thermal annealing, and in situ X-ray diffraction, 2022, Cell Reports Physical Science
  • Br-doped n-type SnS single crystals with carrier concentrations suitable for homojunction solar cells, 2023, Solid State Sciences

Their frequent coauthors include Sakiko Kawanishi, Issei Suzuki, Andriy Zakutayev, Takahisa Omata, and Sage R. Bauers. These collaborators have appeared across multiple publications, reflecting ongoing research partnerships.

Yanagi's work is often published in venues such as Solar RRL, Journal of Physics Energy, Cell Reports Physical Science, Physical Review Materials, and Solid State Sciences. These journals align with their research intersections of materials and engineering sciences.

Best Publications

  • P-type electrical conduction in transparent thin films of CuAlO2

    Hiroshi Kawazoe;Masahiro Yasukawa;Hiroyuki Hyodo;Masaaki Kurita

  • Iron-Based Layered Superconductor: LaOFeP

    Yoichi Kamihara;Hidenori Hiramatsu;Masahiro Hirano;Ryuto Kawamura

  • Transparent p -Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions

    Hiroshi Kawazoe;Hiroshi Yanagi;Kazushige Ueda;Hideo Hosono

  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2

    Hiroshi Yanagi;Shin-ichiro Inoue;Kazushige Ueda;Hiroshi Kawazoe

  • Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition

    K. Ueda;T. Hase;H. Yanagi;H. Kawazoe

  • SrCu2O2: A p-type conductive oxide with wide band gap

    Atsushi Kudo;Hiroshi Yanagi;Hideo Hosono;Hiroshi Kawazoe

  • Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure

    Hiroshi Yanagi;Tomomi Hase;Shuntaro Ibuki;Kazushige Ueda

  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi

  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga

  • Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions

    Hidenori Hiramatsu;Hiroshi Yanagi;Toshio Kamiya;Kazushige Ueda

  • Nickel-based oxyphosphide superconductor with a layered crystal structure, LaNiOP.

    Takumi Watanabe;Hiroshi Yanagi;Toshio Kamiya;Yoichi Kamihara

  • Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

    Kosuke Matsuzaki;Kenji Nomura;Hiroshi Yanagi;Toshio Kamiya

  • Work Function of a Room‐Temperature, Stable Electride [Ca24Al28O64]4+(e–)4

    Yoshitake Toda;Hiroshi Yanagi;Eiji Ikenaga;Jung Jin Kim

  • Specific contact resistances between amorphous oxide semiconductor In Ga Zn O and metallic electrodes

    Yasuhiro Shimura;Kenji Nomura;Hiroshi Yanagi;Toshio Kamiya

  • Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

    Atsushi Kudo;Hiroshi Yanagi;Kazushige Ueda;Hideo Hosono

  • Superconductivity induced by co-doping in quaternary fluoroarsenide CaFeAsF.

    Satoru Matsuishi;Yasunori Inoue;Takatoshi Nomura;Hiroshi Yanagi

  • Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Eiji Ikenaga;Hiroshi Yanagi

  • Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

    Kosuke Matsuzaki;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Bipolar Conduction in SnO Thin Films

    Hideo Hosono;Yoichi Ogo;Hiroshi Yanagi;Toshio Kamiya

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Kenji Nomura
Kenji Nomura University of California, San Diego
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Hiroshi Kawazoe
Hiroshi Kawazoe Tokyo Institute of Technology
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Naoki Ohashi
Naoki Ohashi National Institute for Materials Science
Douglas A. Keszler
Douglas A. Keszler Oregon State University

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