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Materials Science

D-Index
45
Citations
16059
World Ranking
11587
National Ranking
715

Overview

Hiroshi Yanagi is affiliated with the University of Yamanashi in Japan. Their research primarily spans the fields of Engineering and Materials Science, with a strong focus in Electrical and Electronic Engineering and Materials Chemistry. Additional subfields include Atomic and Molecular Physics, and Optics, as well as Polymers and Plastics and Inorganic Chemistry.

The main research topics covered by Yanagi include Chalcogenide Semiconductor Thin Films, Quantum Dots Synthesis and Properties, Perovskite Materials and Applications, Semiconductor Materials and Interfaces, Advanced Thermoelectric Materials and Devices, Thin-Film Transistor Technologies, and Transition Metal Oxide Nanomaterials.

Yanagi has contributed to several recent publications, notably including:

  • SnS Homojunction Solar Cell with n-Type Single Crystal and p-Type Thin Film, 2021, Solar RRL
  • Current status of n-type SnS: paving the way for SnS homojunction solar cells, 2022, Journal of Physics Energy
  • n-type electrical conduction in SnS thin films, 2021, Physical Review Materials
  • Antimony nitride discovered by theoretical structure prediction, rapid thermal annealing, and in situ X-ray diffraction, 2022, Cell Reports Physical Science
  • Br-doped n-type SnS single crystals with carrier concentrations suitable for homojunction solar cells, 2023, Solid State Sciences

Their frequent coauthors include Sakiko Kawanishi, Issei Suzuki, Andriy Zakutayev, Takahisa Omata, and Sage R. Bauers. These collaborators have appeared across multiple publications, reflecting ongoing research partnerships.

Yanagi's work is often published in venues such as Solar RRL, Journal of Physics Energy, Cell Reports Physical Science, Physical Review Materials, and Solid State Sciences. These journals align with their research intersections of materials and engineering sciences.

Best Publications

  • P-type electrical conduction in transparent thin films of CuAlO2

    Hiroshi Kawazoe;Masahiro Yasukawa;Hiroyuki Hyodo;Masaaki Kurita

  • Iron-Based Layered Superconductor: LaOFeP

    Yoichi Kamihara;Hidenori Hiramatsu;Masahiro Hirano;Ryuto Kawamura

  • Transparent p -Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions

    Hiroshi Kawazoe;Hiroshi Yanagi;Kazushige Ueda;Hideo Hosono

  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2

    Hiroshi Yanagi;Shin-ichiro Inoue;Kazushige Ueda;Hiroshi Kawazoe

  • Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition

    K. Ueda;T. Hase;H. Yanagi;H. Kawazoe

  • SrCu2O2: A p-type conductive oxide with wide band gap

    Atsushi Kudo;Hiroshi Yanagi;Hideo Hosono;Hiroshi Kawazoe

  • Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure

    Hiroshi Yanagi;Tomomi Hase;Shuntaro Ibuki;Kazushige Ueda

  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi

  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga

  • Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions

    Hidenori Hiramatsu;Hiroshi Yanagi;Toshio Kamiya;Kazushige Ueda

  • Nickel-based oxyphosphide superconductor with a layered crystal structure, LaNiOP.

    Takumi Watanabe;Hiroshi Yanagi;Toshio Kamiya;Yoichi Kamihara

  • Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor

    Kosuke Matsuzaki;Kenji Nomura;Hiroshi Yanagi;Toshio Kamiya

  • Work Function of a Room‐Temperature, Stable Electride [Ca24Al28O64]4+(e–)4

    Yoshitake Toda;Hiroshi Yanagi;Eiji Ikenaga;Jung Jin Kim

  • Specific contact resistances between amorphous oxide semiconductor In Ga Zn O and metallic electrodes

    Yasuhiro Shimura;Kenji Nomura;Hiroshi Yanagi;Toshio Kamiya

  • Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

    Atsushi Kudo;Hiroshi Yanagi;Kazushige Ueda;Hideo Hosono

  • Superconductivity induced by co-doping in quaternary fluoroarsenide CaFeAsF.

    Satoru Matsuishi;Yasunori Inoue;Takatoshi Nomura;Hiroshi Yanagi

  • Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Eiji Ikenaga;Hiroshi Yanagi

  • Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

    Kosuke Matsuzaki;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Bipolar Conduction in SnO Thin Films

    Hideo Hosono;Yoichi Ogo;Hiroshi Yanagi;Toshio Kamiya

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Kenji Nomura
Kenji Nomura University of California, San Diego
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Hiroshi Kawazoe
Hiroshi Kawazoe Tokyo Institute of Technology
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Naoki Ohashi
Naoki Ohashi National Institute for Materials Science
Douglas A. Keszler
Douglas A. Keszler Oregon State University

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