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Materials Science

D-Index
56
Citations
15432
World Ranking
8142
National Ranking
458

Overview

Kazushige Ueda is affiliated with the Kyushu Institute of Technology in Japan and has contributed extensively to the fields of Materials Science and Engineering with a focus on Materials Chemistry and Electrical and Electronic Engineering.

Their research primarily revolves around luminescence properties and advanced materials, with a strong emphasis on the study of perovskite materials and their applications. Other research interests include microwave dielectric ceramics synthesis, advanced condensed matter physics, electronic and structural properties of oxides, cosmology and gravitation theories, as well as nuclear materials and radiation effects.

Frequent coauthors in Ueda's research include Tetsuo Honma, Tatsuhiko Ogata, Yuhei Shimizu, Shoichiro Nagashima, and Takahisa Omata.

Ueda's work has been published in various scientific journals, with several frequent publication venues as follows:

  • The Journal of Physical Chemistry C
  • Journal of Luminescence
  • Inorganic Chemistry
  • physica status solidi (b)
  • Crystal Growth & Design

Selected recent papers authored or co-authored by Kazushige Ueda include:

  • Site-Dependent Eu3+ Photoluminescence in Double Perovskite-Type Alkaline Earth Lanthanum Tantalates, 2020, Journal of Luminescence
  • Site-Dependent Tb3+ Luminescence by Energy Transfer from Ce3+ in Ce3+-Tb3+ Codoped LaLuO3, 2022, The Journal of Physical Chemistry C
  • Effects of Codoping on Site-Dependent Eu3+ Luminescence in Perovskite-Type Calcium Zirconate and Hafnate, 2023, Inorganic Chemistry
  • Site-Selective Eu3+ Doping and Enhanced Luminescence from Eu3+ at B Sites in Perovskite-Type Strontium Zirconate and Hafnate, 2023, The Journal of Physical Chemistry C
  • Site-Dependent Luminescence from Pr3+ in Double-Perovskite-Type Alkaline Earth Lanthanum Tantalates, 2023, The Journal of Physical Chemistry C

Best Publications

  • Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

    Hideo Hosono;Hiromichi Ota;Masahiro Orita;Kazushige Ueda

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya

  • Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

    Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Kazushige Ueda

  • Transparent p -Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions

    Hiroshi Kawazoe;Hiroshi Yanagi;Kazushige Ueda;Hideo Hosono

  • Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2

    Hiroshi Yanagi;Shin-ichiro Inoue;Kazushige Ueda;Hiroshi Kawazoe

  • Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition

    K. Ueda;T. Hase;H. Yanagi;H. Kawazoe

  • Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure

    Hiroshi Yanagi;Tomomi Hase;Shuntaro Ibuki;Kazushige Ueda

  • Transparent p-type semiconductor: LaCuOS layered oxysulfide

    K. Ueda;S. Inoue;S. Hirose;H. Kawazoe

  • Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions

    Hidenori Hiramatsu;Hiroshi Yanagi;Toshio Kamiya;Kazushige Ueda

  • New ultraviolet‐transport electroconductive oxide, ZnGa2O4 spinel

    Takahisa Omata;Naoyuki Ueda;Kazushige Ueda;Hiroshi Kawazoe

  • Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

    Atsushi Kudo;Hiroshi Yanagi;Kazushige Ueda;Hideo Hosono

  • Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy

    Hiromichi Ohta;Kenji Nomura;Masahiro Orita;Masahiro Hirano

  • Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films

    Hidenori Hiramatsu;Kazushige Ueda;Hiromichi Ohta;Masashiro Hirano

  • Frontier of transparent conductive oxide thin films

    H Hosono;H Ohta;M Orita;K Ueda

  • Field Emission of Electron Anions Clathrated in Subnanometer-Sized Cages in [Ca24Al28O64]4+(4e–)

    Yoshitake Toda;Satoru Matsuishi;Katsuro Hayashi;Kazushige Ueda;Kazushige Ueda

  • A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

    Satoru Narushima;Hiroshi Mizoguchi;Ken-Ichi Shimizu;Kazushige Ueda

  • Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure

    Hiroshi Yanagi;Kazushige Ueda;Hiromichi Ohta;Masahiro Orita

  • Frontier of transparent oxide semiconductors

    Hiromichi Ohta;Kenji Nomura;Hidenori Hiramatsu;Kazushige Ueda

  • Crystal structure of metastable κ-CeZrO4 phase possessing an ordered arrangement of Ce and Zr ions

    Haruo Kishimoto;Takahisa Omata;Shinya Otsuka-Yao-Matsuo;Kazushige Ueda

  • Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS

    K. Ueda;S. Inoue;H. Hosono;N. Sarukura

  • Transparent Conducting Oxides Based on the Spinel Structure

    Hiroshi Kawazoe;Kazushige Ueda

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Hiroshi Yanagi
Hiroshi Yanagi University of Yamanashi
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Hiroshi Kawazoe
Hiroshi Kawazoe Tokyo Institute of Technology
Kenji Nomura
Kenji Nomura University of California, San Diego
Stéphane Jobic
Stéphane Jobic University of Nantes
Sung Wng Kim
Sung Wng Kim Sungkyunkwan University

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