2022 - Research.com Materials Science in Japan Leader Award
2018 - Von Hippel Award, Materials Research Society
2017 - Fellow of the Royal Society, United Kingdom
2016 - Society for Information Display Fellow
2012 - Nishina Memorial Prize
His primary areas of study are Optoelectronics, Condensed matter physics, Thin film, Amorphous solid and Superconductivity. His studies deal with areas such as Pulsed laser deposition, Transistor and Thin-film transistor as well as Optoelectronics. His Condensed matter physics research includes themes of Electron and Electrical resistivity and conductivity.
His Thin film research is multidisciplinary, incorporating perspectives in Substrate, Epitaxy and Analytical chemistry. His Amorphous solid research is multidisciplinary, incorporating elements of Electronic engineering and Annealing. His Semiconductor study which covers Electron mobility that intersects with Oxide.
His main research concerns Condensed matter physics, Optoelectronics, Superconductivity, Analytical chemistry and Thin film. His studies in Condensed matter physics integrate themes in fields like Electron and Electrical resistivity and conductivity. The concepts of his Optoelectronics study are interwoven with issues in Amorphous solid, Transistor and Thin-film transistor.
The study incorporates disciplines such as Phase, Phase diagram and Iron based in addition to Superconductivity. His work focuses on many connections between Analytical chemistry and other disciplines, such as Ion, that overlap with his field of interest in Crystallography and Hydride. His Thin film research incorporates elements of Oxide, Substrate and Epitaxy.
Hideo Hosono mostly deals with Condensed matter physics, Superconductivity, Catalysis, Optoelectronics and Hydrogen. His research combines Fermi level and Condensed matter physics. His research investigates the link between Superconductivity and topics such as Doping that cross with problems in Epitaxy.
He usually deals with Catalysis and limits it to topics linked to Inorganic chemistry and Lanthanide. His Optoelectronics study combines topics in areas such as Amorphous solid, Thin film, Transistor and Thin-film transistor. Hideo Hosono interconnects Band gap and Amorphous oxide in the investigation of issues within Semiconductor.
His scientific interests lie mostly in Catalysis, Ammonia production, Electride, Optoelectronics and Metal. The Electride study combines topics in areas such as Fermi level and Condensed matter physics, Ferromagnetism. His Condensed matter physics study integrates concerns from other disciplines, such as Pulsed laser deposition, Magnetization, Epitaxy and Anisotropy.
His Optoelectronics research includes elements of Amorphous solid, Transistor and Perovskite. While the research belongs to areas of Inorganic chemistry, Hideo Hosono spends his time largely on the problem of Hydrogen, intersecting his research to questions surrounding Ion, Crystallography, Chemical reaction, Boride and Doping. His Semiconductor research is multidisciplinary, incorporating elements of Photovoltaics, Density functional theory and Thin-film transistor.
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Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Yoichi Kamihara;Takumi Watanabe;Masahiro Hirano;Hideo Hosono.
Journal of the American Chemical Society (2008)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya.
Nature (2004)
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
Hideo Hosono;Hiromichi Ota;Masahiro Orita;Kazushige Ueda.
(2002)
Oxide thin film
Hiroshi Kawazoe;Hideo Hosono;Atsushi Kudo;Hiroshi Yanagi.
(1999)
LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
Hideo Hosono;Masahiro Hirano;Hiromichi Ota;Masahiro Orita.
(2003)
Amorphous oxide and thin film transistor
Hideo Hosono;Masahiro Hirano;Hiromichi Room Dream-coat Ota;Toshio Room Monarch-Mizonokuchi Kamiya.
(2005)
Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya.
(2005)
Integrated circuits utilizing amorphous oxides
Katsumi Abe;Hideo Hosono;Toshio Kamiya;Kenji Nomura.
(2010)
Amorphous oxide and field effect transistor
Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya.
(2005)
Field effect transistor manufacturing method
Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono.
(2005)
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