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Materials Science
Japan
2026

D-Index & Metrics

Materials Science

D-Index
162
Citations
170377
World Ranking
105
National Ranking
5

Research.com Recognitions

  • 2026 - Research.com Materials Science in Japan Leader Award
  • 2025 - Research.com Materials Science in Japan Leader Award
  • 2023 - Research.com Materials Science in Japan Leader Award
  • 2022 - Research.com Materials Science in Japan Leader Award
  • 2018 - Von Hippel Award, Materials Research Society
  • 2017 - Fellow of the Royal Society, United Kingdom
  • 2016 - Society for Information Display Fellow
  • 2012 - Nishina Memorial Prize

Overview

Hideo Hosono is affiliated with the Tokyo Institute of Technology in Japan and specializes in the field of Materials Science. Their research output includes significant contributions across subfields such as Materials Chemistry, Catalysis, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, as well as Renewable Energy, Sustainability and the Environment.

Their work predominantly covers topics including Ammonia Synthesis and Nitrogen Reduction, Hydrogen Storage and Materials, MXene and MAX Phase Materials, 2D Materials and Applications, Advanced Photocatalysis Techniques, Nanomaterials for catalytic reactions, and Iron-based superconductors research.

Recent notable publications include:

  • Vacancy-enabled N2 activation for ammonia synthesis on an Ni-loaded catalyst, 2020, Nature
  • Mobility-stability trade-off in oxide thin-film transistors, 2021, Nature Electronics
  • Advances in Materials and Applications of Inorganic Electrides, 2021, Chemical Reviews
  • Contribution of Nitrogen Vacancies to Ammonia Synthesis over Metal Nitride Catalysts, 2020, Journal of the American Chemical Society
  • Computational Prediction of Boron-Based MAX Phases and MXene Derivatives, 2020, Chemistry of Materials

Frequent collaborators in their research include Masaaki Kitano, Masato Sasase, Toshio Kamiya, Hidenori Hiramatsu, and Yangfan Lu.

Publications are commonly found in these venues:

  • Journal of the American Chemical Society
  • Physical Review B
  • The Journal of Physical Chemistry C
  • Advanced Functional Materials
  • ACS Catalysis

Hideo Hosono has been recognized with several awards, including the Von Hippel Award from the Materials Research Society in 2018, election as a Fellow of the Royal Society (United Kingdom) in 2017, the Society for Information Display Fellow in 2016, and the Nishina Memorial Prize in 2012.

Best Publications

  • Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K

    Yoichi Kamihara;Takumi Watanabe;Masahiro Hirano;Hideo Hosono

  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya

  • SEMICONDUCTOR DEVICE WITH AMORPHOUS OXIDE UTILIZED THEREIN

    Abe Katsumi;Hosono Hideo;Kamiya Toshio;Nomura Kenji

  • Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

    Hideo Hosono;Hiromichi Ota;Masahiro Orita;Kazushige Ueda

  • LCD AND ORGANIC EL DISPLAY

    Hosono Hideo;Hirano Masahiro;Ota Hiromichi;Kamiya Toshio

  • Oxide thin film

    Hiroshi Kawazoe;Hideo Hosono;Atsushi Kudo;Hiroshi Yanagi

  • LnCuO (S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE SAME

    Hosono Hideo;Hirano Masahiro;Orita Masahiro;Ota Hiromichi

  • Amorphous oxide and field effect transistor

    Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya

  • Field effect transistor manufacturing method

    Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono

  • Sensor and nonplanar imaging device

    Hideo Hosono;Toshio Kamiya;Kenji Nomura;Keishi Saito

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya

  • P-type electrical conduction in transparent thin films of CuAlO2

    Hiroshi Kawazoe;Masahiro Yasukawa;Hiroyuki Hyodo;Masaaki Kurita

  • Present status of amorphous In–Ga–Zn–O thin-film transistors

    Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Iron-Based Layered Superconductor: LaOFeP

    Yoichi Kamihara;Hidenori Hiramatsu;Masahiro Hirano;Ryuto Kawamura

  • Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

    Kenji Nomura;Akihiro Takagi;Toshio Kamiya;Hiromichi Ohta

  • Superconductivity at 43 K in an iron-based layered compound LaO 1-x F x FeAs

    Hiroki Takahashi;Kazumi Igawa;Kazunobu Arii;Yoichi Kamihara

  • Transparent thin film field effect type transistor using homologous thin film as active layer

    Hiromichi Ota;太田 裕道;Hideo Hosono;細野 秀雄

  • High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba

  • Article having transparent conductive oxide thin film and its production

    Kiyoshi Morita;清 森田;Hiromichi Ota;裕道 太田

  • Ammonia synthesis using a stable electride as an electron donor and reversible hydrogen store

    Masaaki Kitano;Yasunori Inoue;Youhei Yamazaki;Fumitaka Hayashi

Frequent Co-Authors

Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Satoru Matsuishi
Satoru Matsuishi National Institute for Materials Science
Kenji Nomura
Kenji Nomura University of California, San Diego
Hiroshi Kawazoe
Hiroshi Kawazoe Tokyo Institute of Technology
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Hiroshi Yanagi
Hiroshi Yanagi University of Yamanashi
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Katsuro Hayashi
Katsuro Hayashi Kyushu University

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