World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 47 3156 3022 89 88 351 12714
Materials Science 47 10992 10619 489 482 338 12633

Chi-Sun Hwang publications per year

The chart shows the history of publications by Chi-Sun Hwang between 1995 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Chi-Sun Hwang published across 31 years, from 1995 to 2025, averaging 11.8 papers a year. Output peaked at 37 publications in 2009. 11 of the 367 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1995 to 2025. Vertical axis: number of publications, 0 to 37. Peak 37 publications in 2009. 1995: 3 publications 1996: 2 publications 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 7 publications 2002: 5 publications 2003: 7 publications 2004: 6 publications 2005: 7 publications 2006: 8 publications 2007: 7 publications 2008: 19 publications 2009: 37 publications 2010: 31 publications 2011: 23 publications 2012: 14 publications 2013: 18 publications 2014: 24 publications 2015: 24 publications 2016: 23 publications 2017: 19 publications 2018: 21 publications 2019: 15 publications 2020: 7 publications 2021: 13 publications 2022: 9 publications 2023: 7 publications 2024: 9 publications 2025: 2 publications
1995 2025

367 publications in total across all disciplines

View publications per year as a table
Chi-Sun Hwang: publications per year, 1995 to 2025
Year Publications
1995 3
1996 2
1997 0
1998 0
1999 0
2000 0
2001 7
2002 5
2003 7
2004 6
2005 7
2006 8
2007 7
2008 19
2009 37
2010 31
2011 23
2012 14
2013 18
2014 24
2015 24
2016 23
2017 19
2018 21
2019 15
2020 7
2021 13
2022 9
2023 7
2024 9
2025 2
Total 367
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Chi-Sun Hwang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Chi-Sun Hwang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 351 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 351
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Chi-Sun Hwang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Chi-Sun Hwang sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 47 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160 47
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Chi-Sun Hwang is affiliated with the Electronics and Telecommunications Research Institute in South Korea. Their research spans multiple aspects of engineering and materials science, with a particular focus on electrical and electronic engineering and materials chemistry.

Their main areas of study encompass:

  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advanced Sensor and Energy Harvesting Materials
  • Ga2O3 and related materials
  • Nanowire Synthesis and Applications
  • Advanced Memory and Neural Computing

Frequent coauthors collaborating with Chi-Sun Hwang include:

  • Jong-Heon Yang
  • Nak-Jin Seong
  • Kyu-Jeong Choi
  • Sung-Min Yoon
  • Jae-Eun Pi

The primary publication venues for their work include:

  • Nature Communications
  • ACS Applied Electronic Materials
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces

Representative recent publications by Chi-Sun Hwang are:

  • Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution, 2020, Nature Communications
  • Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays, 2020, Nature Communications
  • High density integration of stretchable inorganic thin film transistors with excellent performance and reliability, 2022, Nature Communications
  • Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Zn-O Channel Layers, 2022, Electronic Materials Letters
  • Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO2 Spacer and an In-Ga-Zn-O Active Channel, 2021, ACS Applied Electronic Materials

Their work addresses fundamental and applied aspects of semiconductor devices, focusing on thin-film transistors and nanostructured materials. Applications involve flexible and stretchable electronics, transparent electroluminescent materials, and high-resolution display technologies, reflecting an interdisciplinary approach combining electronic engineering and advanced material systems.

Best Publications

  • 21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane

    Doo-Hee Cho;Shinhyuk Yang;Sang-Hee Ko Park;Chunwon Byun

  • 42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display

    Sang Hee Ko Park;Minki Ryu;Chi Sun Hwang;Shinhyuk Yang

  • Challenge to Future Displays: Transparent AM-OLED driven by PEALD grown ZnO TFT

    Sang-Hee Ko Park;Chi-Sun Hwang;Chun-Won Byun;Min-Ki Ryu

  • Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

    Elvira Fortunato;Raquel Barros;Pedro Barquinha;Vitor Figueiredo

  • Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

    Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  • Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel

    Sang Hee K. Park;Chi Sun Hwang;Minki Ryu;Shinhyuk Yang

  • Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

    Kwang Hwan Ji;Ji-In Kim;Yeon-Gon Mo;Jong Han Jeong

  • Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

    Jae-Heon Shin;Ji-Su Lee;Chi-Sun Hwang;Sang-Hee Ko Park

  • Ultrathin Film Encapsulation of an OLED by ALD

    Sang-Hee Ko Park;Jiyoung Oh;Chi-Sun Hwang;Jeong-Ik Lee

  • Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

    Shinhyuk Yang;Doo-Hee Cho;Min Ki Ryu;Sang-Hee Ko Park

  • Thin-film transistors based on p-type Cu2O thin films produced at room temperature

    Elvira Fortunato;Vitor Figueiredo;Pedro Barquinha;Elangovan Elamurugu

  • Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature

    Doo-Hee Cho;Shinhyuk Yang;Chunwon Byun;Jaeheon Shin

  • Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution.

    Byeongmoon Lee;Ji-Young Oh;Hyeon Cho;Chul Woong Joo

  • Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics

    Jeong-Min Lee;In-Tak Cho;Jong-Ho Lee;Woo-Seok Cheong

  • High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

    Min Ki Ryu;Shinhyuk Yang;Sang-Hee Ko Park;Chi-Sun Hwang

  • Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays

    Sukyung Choi;Chan-mo Kang;Chun-Won Byun;Hyunsu Cho

  • Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

    Min Ki Ryu;Shinhyuk Yang;Sang-Hee Ko Park;Chi-Sun Hwang

  • Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition

    Sang-Hee Ko Park;Chi-Sun Hwang;Hu Young Jeong;Hye Yong Chu

  • Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

    Sung‐Min Yoon;Shinhyuk Yang;Chunwon Byun;Sang‐Hee K. Park

  • Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

    Shinhyuk Yang;Kwang Hwan Ji;Un Ki Kim;Cheol Seong Hwang

Frequent Co-Authors

Sang-Hee Ko Park
Sang-Hee Ko Park Korea Advanced Institute of Science and Technology
Hye Yong Chu
Hye Yong Chu Electronics and Telecommunications Research Institute
Jeong-Ik Lee
Jeong-Ik Lee Korea Advanced Institute of Science and Technology
Jin Jang
Jin Jang Kyung Hee University
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Jong-Ho Lee
Jong-Ho Lee Soongsil University
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Elvira Fortunato
Elvira Fortunato Universidade Nova de Lisboa
Rodrigo Martins
Rodrigo Martins Universidade Nova de Lisboa
Hong-Ku Shim
Hong-Ku Shim Korea Advanced Institute of Science and Technology

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