World's Best Scientists 2026 revealed!
Jin-Seong Park

Jin-Seong Park

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Materials Science
Korea
2022

D-Index & Metrics

Materials Science

D-Index
73
Citations
27528
World Ranking
3752
National Ranking
126

Jin-Seong Park publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jin-Seong Park sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 499 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jin-Seong Park D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jin-Seong Park sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 73 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Korea Leader Award

Overview

Jin-Seong Park is affiliated with Hanyang University in South Korea and has an extensive research portfolio in engineering and materials science, particularly focusing on electrical and electronic engineering as well as materials chemistry.

Their research spans multiple subfields including:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Park's work centers primarily on semiconductor materials and devices, with specific attention to thin-film transistor technologies and zinc oxide (ZnO) doping and properties. Additional topics of research incorporate electronic and structural properties of oxides, advanced memory and neural computing, transition metal oxide nanomaterials, and advanced sensor and energy harvesting materials.

Frequent co-authors in their collaborative projects include Su-Hwan Choi, Dong-Gyu Kim, Hye-Mi Kim, Hyun-Jun Jeong, and Seung-Hwan Lee, reflecting sustained teamwork in related research areas.

Park has contributed articles to several notable publication venues, such as:

  • SSRN Electronic Journal
  • Applied Surface Science
  • ACS Applied Materials & Interfaces
  • ACS Applied Electronic Materials
  • Ceramics International

Some of the recent papers by Park, reflecting a range of applications and fields, include:

  • "Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook," published in 2023 in the International Journal of Extreme Manufacturing
  • "Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation," 2020, ECS Journal of Solid State Science and Technology
  • "State of the Art: The Immunomodulatory Role of MSCs for Osteoarthritis," 2022, International Journal of Molecular Sciences
  • "Highly efficient and stable flexible perovskite solar cells enabled by using plasma-polymerized-fluorocarbon antireflection layer," 2021, Nano Energy
  • "Remarkable Stability Improvement with a High-Performance PEALD-IZO/IGZO Top-Gate Thin-Film Transistor via Modulating Dual-Channel Effects," 2022, Advanced Materials Interfaces

Best Publications

  • Thin film transistor and organic light-emitting display device having the thin film transistor

    Jin-Seong Park;Yeon-Gon Mo;Jae-Kyeong Jeong;Jong-Han Jeong

  • Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

    Jin-Seong Park;Jae Kyeong Jeong;Hyun-Joong Chung;Yeon-Gon Mo

  • Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

    Jin-Seong Park;Jae Kyeong Jeong;Yeon-Gon Mo;Hye Dong Kim

  • Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

    Joon Seok Park;Wan Joo Maeng;Hyun Suk Kim;Jin Seong Park

  • 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

    Jae Kyeong Jeong;Jong Han Jeong;Jong Hyun Choi;Jang Soon Im

  • High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    Minkyu Kim;Jong Han Jeong;Hun Jung Lee;Tae Kyung Ahn

  • Thin film encapsulation for flexible AM-OLED: a review

    Jin-Seong Park;Heeyeop Chae;Ho Kyoon Chung;Sang In Lee

  • Thin film transistor, method of manufacturing the same, and flat panel display device having the same

    Min-Kyu Kim;Jong-Han Jeong;Tae-kyung Ahn;Jae-Kyeong Jeong

  • Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

    Jin-Seong Park;Tae-Woong Kim;Denis Stryakhilev;Jae-Sup Lee

  • High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

    Jae Kyeong Jeong;Jong Han Jeong;Hui Won Yang;Jin-Seong Park

  • Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates

    Booyong S. Lim;Antti Rahtu;Jin-Seong Park;Roy G. Gordon

  • Novel ZrInZnO Thin‐film Transistor with Excellent Stability

    Jin-Seong Park;KwangSuk Kim;Yong Gil Park;Yeon Gon Mo

  • Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

    Jiazhen Sheng;Tae Hyun Hong;Hyun Mo Lee;Kyoung Rok Kim

  • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Chang-Jung Kim;Sangwook Kim;Je-Hun Lee;Jin-Seong Park

  • Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

    Jong Han Jeong;Hui Won Yang;Jin-Seong Park;Jae Kyeong Jeong

  • Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS

    D.K. Nayak;J.C.S. Woo;J.S. Park;K. Wang

  • High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

    S. J. Lim;Soon Ju Kwon;Hyungjun Kim;Jin Seong Park

  • Control of threshold voltage in ZnO-based oxide thin film transistors

    Jin-Seong Park;Jae Kyeong Jeong;Yeon-Gon Mo;Hye Dong Kim

  • The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

    Jaeseob Lee;Jin-Seong Park;Young Shin Pyo;Dong Bum Lee

  • Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

    Byung Du Ahn;Hyun Soo Shin;Hyun Jae Kim;Jin Seong Park

  • Thin film transistor and method of manufacturing the same, and flat panel display device having thin film transistor

    Tae-Kyung Ahn;Hyun-Joong Chung;Jae Kyeong Jeong;Jong-Han Jeong

Frequent Co-Authors

Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Yeon-Gon Mo
Yeon-Gon Mo Samsung (South Korea)
Hyun-Joong Chung
Hyun-Joong Chung University of Alberta
Hyun Jae Kim
Hyun Jae Kim Yonsei University
Kwan-Soo Lee
Kwan-Soo Lee Hanyang University
Sunil Kim
Sunil Kim Samsung (South Korea)
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Hyun You Kim
Hyun You Kim Chungnam National University
Tae Hee Han
Tae Hee Han Hanyang University
Hyungjun Kim
Hyungjun Kim Yonsei University

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