World's Best Scientists 2026 revealed!
Chang-Jung Kim

Chang-Jung Kim

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 46 3302 3164 98 97 147 20455

Chang-Jung Kim publications per year

The chart shows the history of publications by Chang-Jung Kim between 2001 and 2016, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Chang-Jung Kim published across 16 years, from 2001 to 2016, averaging 9.1 papers a year. Output peaked at 32 publications in 2011. 2 of the 145 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 2001 to 2016. Vertical axis: number of publications, 0 to 32. Peak 32 publications in 2011. 2001: 1 publication 2002: 1 publication 2003: 1 publication 2004: 0 publications 2005: 1 publication 2006: 0 publications 2007: 8 publications 2008: 22 publications 2009: 21 publications 2010: 24 publications 2011: 32 publications 2012: 22 publications 2013: 7 publications 2014: 3 publications 2015: 1 publication 2016: 1 publication
2001 2016

145 publications in total across all disciplines

View publications per year as a table
Chang-Jung Kim: publications per year, 2001 to 2016
Year Publications
2001 1
2002 1
2003 1
2004 0
2005 1
2006 0
2007 8
2008 22
2009 21
2010 24
2011 32
2012 22
2013 7
2014 3
2015 1
2016 1
Total 145
Download as CSV

Chang-Jung Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Chang-Jung Kim sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 147 publications — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 147
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Chang-Jung Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Chang-Jung Kim sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 46 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148 46
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Chang-Jung Kim is affiliated with Samsung in South Korea. The scientist's research and professional activities are closely connected with this institution.

There are no listed recent papers for Chang-Jung Kim, and no information is available about frequent co-authors, publication venues, book publications, fields of study, subfields, or main topics of work. Likewise, no awards have been recorded.

This profile focuses on the available professional affiliation, which situates the scientist within a major technology and research organization in South Korea, potentially indicating involvement in industrial or applied research.

Best Publications

  • ZnO THIN FILM TRANSISTOR

    Dong-Hoon Kang;Shojun Kin;Young-Soo Park;I-Hun Song

  • Thin film transistor, method of manufacturing the same, and flat panel display having the same

    Jae-Chul Park;Chang-Jung Kim;Sun-Il Kim;I-hun Song

  • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

    Myoung-Jae Lee;Chang Bum Lee;Dongsoo Lee;Seung Ryul Lee

  • High-Performance Oxide Thin Film Transistors Passivated by Various Gas Plasmas

    Sangwook Kim;Jaechul Park;Changjung Kim;Sunil Kim

  • Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

    Donghun Kang;Hyuck Lim;Changjung Kim;Ihun Song

  • Thin film transistor having a graded metal oxide layer

    Dong-hun Kang;Stefanovich Genrikh;I-hun Song;Young-soo Park

  • Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

    Sungsik Lee;Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson

  • Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

    Myoung-Jae Lee;Sun I. Kim;Chang B. Lee;Huaxiang Yin

  • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Chang-Jung Kim;Sangwook Kim;Je-Hun Lee;Jin-Seong Park

  • Control of threshold voltage in ZnO-based oxide thin film transistors

    Jin-Seong Park;Jae Kyeong Jeong;Yeon-Gon Mo;Hye Dong Kim

  • Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor

    Dong-hun Kang;I-hun Song;Young-soo Park;Chang-Jung Kim

  • High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

    Jaechul Park;Sangwook Kim;Changjung Kim;Sunil Kim

  • Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

    Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon

  • Persistent photoconductivity in Hf–In–Zn–O thin film transistors

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers

    Jae Chul Park;Sangwook Kim;Sunil Kim;Changjung Kim

  • Oxide semiconductors and thin film transistors comprising the same

    Chang-Jung Kim;Sang-Wook Kim;Sun-Il Kim

  • Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

    Jaechul Park;Ihun Song;Sunil Kim;Sangwook Kim

  • FABRICATION METHOD OF ZNO THIN FILM AND ZNO TRANSISTOR, AND THIN FILM TRANSISTOR ADOPTING THE SAME

    Kim Chang Jung;Song I Hun;Kang Dong Hun;Park Young Soo

  • Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

    Kichan Jeon;Changjung Kim;Ihun Song;Jaechul Park

  • Method of operating inverter

    Sangwook Kim;Ihun Song;Changjung Kim;Jaechul Park

Frequent Co-Authors

Sunil Kim
Sunil Kim Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Young-soo Park
Young-soo Park Korea University
U-In Chung
U-In Chung Samsung (South Korea)
Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
Myoung-Jae Lee
Myoung-Jae Lee Daegu Gyeongbuk Institute of Science and Technology
Young Keun Kim
Young Keun Kim Korea University
Arokia Nathan
Arokia Nathan University of Cambridge
John Robertson
John Robertson University of Cambridge
Jin-Seong Park
Jin-Seong Park Hanyang University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Exploring Electronics and Electrical Engineering in the USA opens doors to diverse career paths. For those eager to start quickly, many online colleges starting soon offer flexible enrollment options, allowing students to begin their studies without long waits.

If time is a constraint, pursuing short certificate programs that pay well online can be a practical choice. These accelerated programs provide targeted skills and credentials that can quickly enhance your employability in technical fields.

For individuals who prefer less socially intense work environments, careers suited for introvert jobs within the engineering domain may offer fulfilling opportunities. Roles involving research, design, or data analysis often align well with introverted strengths.

Additionally, combining technical knowledge with management skills is increasingly valuable. Online options for an online project management degree accelerated can prepare students to lead complex engineering projects efficiently, boosting career growth potential.

Best Scientists Citing Chang-Jung Kim

Recently Published Articles