World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
8132
World Ranking
4433
National Ranking
150

Seung-Eon Ahn publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Seung-Eon Ahn sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 116 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Seung-Eon Ahn D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Seung-Eon Ahn sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Seung-Eon Ahn is affiliated with the Tech University of Korea in South Korea. Their research spans primarily the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering, Materials Chemistry, Artificial Intelligence, Polymers and Plastics, and Cellular and Molecular Neuroscience.

Their work covers several main topics, including Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, Semiconductor Materials and Devices, Ferroelectric and Piezoelectric Materials, MXene and MAX Phase Materials, Neural Networks and Reservoir Computing, and Microwave and Dielectric Measurement Techniques.

Recent publications by Seung-Eon Ahn highlight their engagement in advanced materials for neuromorphic computing and memory applications. These include:

  • Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications, 2022, Advanced Materials Technologies
  • Oxide Semiconductor Memristor-Based Optoelectronic Synaptic Devices With Quaternary Memory Storage, 2024, Advanced Electronic Materials
  • Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications, 2022, Materials
  • A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering, 2022, Advanced Materials Interfaces
  • Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application, 2022, Nanomaterials

Their frequent co-authors include Wonwoo Kho, Hyunjoo Hwang, Hyo-Bae Kim, Ji-Hoon Ahn, and Sungmun Song.

Seung-Eon Ahn has published multiple times in venues such as Nanomaterials, Advanced Electronic Materials, Advanced Materials Interfaces, Sensors, and Advanced Materials Technologies. Notably, the highest number of publications appear in Nanomaterials and Advanced Electronic Materials.

The scientist's interdisciplinary research contributes to understanding and developing materials and devices related to neural computing and semiconductor technologies. The focus on ferroelectric tunnel junctions and memristor-based optoelectronic synaptic devices indicates an emphasis on building components for neuromorphic systems.

Best Publications

  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films

    D. C. Kim;S. Seo;S. E. Ahn;D.-S. Suh

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

    Myoung-Jae Lee;Youngsoo Park;Dong-Seok Suh;Eun-Hong Lee

  • Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

    Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  • Photoresponse of sol-gel-synthesized ZnO nanorods

    Seung Eon Ahn;Jong Soo Lee;Hyunsuk Kim;Sangsig Kim

  • Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

    I.G. Baek;D.C. Kim;M.J. Lee;H.-J. Kim

  • Improvement of resistive memory switching in NiO using IrO2

    D. C. Kim;M. J. Lee;S. E. Ahn;S. Seo

  • A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories†

    Myoung-Jae Lee;Sunae Seo;Dong-Chirl Kim;Seung-Eon Ahn

  • Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

    Myoung-Jae Lee;Sun I. Kim;Chang B. Lee;Huaxiang Yin

  • 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

    Myoung-Jae Lee;Youngsoo Park;Bo-Soo Kang;Seung-Eon Ahn

  • Effects of metal electrodes on the resistive memory switching property of NiO thin films

    C. B. Lee;B. S. Kang;A. Benayad;M. J. Lee

  • Write Current Reduction in Transition Metal Oxide Based Resistance-Change Memory**

    Seung-Eon Ahn;Myoung-Jae Lee;Youngsoo Park;Bo Soo Kang

  • Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

    Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon

  • Electrode dependence of resistance switching in polycrystalline NiO films

    S. Seo;M. J. Lee;D. C. Kim;S. E. Ahn

  • High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications

    Bo Soo Kang;Seung-Eon Ahn;Myoung-Jae Lee;Genrikh Stefanovich

  • Memory device, memory system having the same, and programming method of a memory cell

    Ho Jung Kim;Chul Woo Park;Sang Beom Kang;Hyun Ho Choi

  • Resistive random access memory device

    Chang-Bum Lee;Young-Soo Park;Wenxu Xianyu;Bo-Soo Kang

  • 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

    Sanghun Jeon;Sungho Park;Ihun Song;Ji-Hyun Hur

  • NONVOLITILE MEMORY DEVICE COMPRISING ONE RESISTANCE MATERIAL AND ONE DIODE

    Ahn Seung Eon;Yoo In Kyeong;Joung Yong Soo;Lee Myoung Jae

  • Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates

    M.-J. Lee;C.B. Lee;S. Kim;H. Yin

Frequent Co-Authors

Myoung-Jae Lee
Myoung-Jae Lee Daegu Gyeongbuk Institute of Science and Technology
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Young-soo Park
Young-soo Park Korea University
U-In Chung
U-In Chung Samsung (South Korea)
Young Keun Kim
Young Keun Kim Korea University
Bae Ho Park
Bae Ho Park Konkuk University
Arokia Nathan
Arokia Nathan University of Cambridge
Kinam Kim
Kinam Kim Samsung (South Korea)
John Robertson
John Robertson University of Cambridge

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