World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
8132
World Ranking
4433
National Ranking
150

Overview

Seung-Eon Ahn is affiliated with the Tech University of Korea in South Korea. Their research spans primarily the fields of Engineering and Materials Science, with a focus on Electrical and Electronic Engineering, Materials Chemistry, Artificial Intelligence, Polymers and Plastics, and Cellular and Molecular Neuroscience.

Their work covers several main topics, including Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, Semiconductor Materials and Devices, Ferroelectric and Piezoelectric Materials, MXene and MAX Phase Materials, Neural Networks and Reservoir Computing, and Microwave and Dielectric Measurement Techniques.

Recent publications by Seung-Eon Ahn highlight their engagement in advanced materials for neuromorphic computing and memory applications. These include:

  • Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications, 2022, Advanced Materials Technologies
  • Oxide Semiconductor Memristor-Based Optoelectronic Synaptic Devices With Quaternary Memory Storage, 2024, Advanced Electronic Materials
  • Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications, 2022, Materials
  • A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering, 2022, Advanced Materials Interfaces
  • Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application, 2022, Nanomaterials

Their frequent co-authors include Wonwoo Kho, Hyunjoo Hwang, Hyo-Bae Kim, Ji-Hoon Ahn, and Sungmun Song.

Seung-Eon Ahn has published multiple times in venues such as Nanomaterials, Advanced Electronic Materials, Advanced Materials Interfaces, Sensors, and Advanced Materials Technologies. Notably, the highest number of publications appear in Nanomaterials and Advanced Electronic Materials.

The scientist's interdisciplinary research contributes to understanding and developing materials and devices related to neural computing and semiconductor technologies. The focus on ferroelectric tunnel junctions and memristor-based optoelectronic synaptic devices indicates an emphasis on building components for neuromorphic systems.

Best Publications

  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films

    D. C. Kim;S. Seo;S. E. Ahn;D.-S. Suh

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

    Myoung-Jae Lee;Youngsoo Park;Dong-Seok Suh;Eun-Hong Lee

  • Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

    Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  • Photoresponse of sol-gel-synthesized ZnO nanorods

    Seung Eon Ahn;Jong Soo Lee;Hyunsuk Kim;Sangsig Kim

  • Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

    I.G. Baek;D.C. Kim;M.J. Lee;H.-J. Kim

  • Improvement of resistive memory switching in NiO using IrO2

    D. C. Kim;M. J. Lee;S. E. Ahn;S. Seo

  • A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories†

    Myoung-Jae Lee;Sunae Seo;Dong-Chirl Kim;Seung-Eon Ahn

  • Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

    Myoung-Jae Lee;Sun I. Kim;Chang B. Lee;Huaxiang Yin

  • 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

    Myoung-Jae Lee;Youngsoo Park;Bo-Soo Kang;Seung-Eon Ahn

  • Effects of metal electrodes on the resistive memory switching property of NiO thin films

    C. B. Lee;B. S. Kang;A. Benayad;M. J. Lee

  • Write Current Reduction in Transition Metal Oxide Based Resistance-Change Memory**

    Seung-Eon Ahn;Myoung-Jae Lee;Youngsoo Park;Bo Soo Kang

  • Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

    Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon

  • Electrode dependence of resistance switching in polycrystalline NiO films

    S. Seo;M. J. Lee;D. C. Kim;S. E. Ahn

  • High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications

    Bo Soo Kang;Seung-Eon Ahn;Myoung-Jae Lee;Genrikh Stefanovich

  • Memory device, memory system having the same, and programming method of a memory cell

    Ho Jung Kim;Chul Woo Park;Sang Beom Kang;Hyun Ho Choi

  • Resistive random access memory device

    Chang-Bum Lee;Young-Soo Park;Wenxu Xianyu;Bo-Soo Kang

  • 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

    Sanghun Jeon;Sungho Park;Ihun Song;Ji-Hyun Hur

  • NONVOLITILE MEMORY DEVICE COMPRISING ONE RESISTANCE MATERIAL AND ONE DIODE

    Ahn Seung Eon;Yoo In Kyeong;Joung Yong Soo;Lee Myoung Jae

  • Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates

    M.-J. Lee;C.B. Lee;S. Kim;H. Yin

Frequent Co-Authors

Myoung-Jae Lee
Myoung-Jae Lee Daegu Gyeongbuk Institute of Science and Technology
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Young-soo Park
Young-soo Park Korea University
U-In Chung
U-In Chung Samsung (South Korea)
Bae Ho Park
Bae Ho Park Konkuk University
Arokia Nathan
Arokia Nathan University of Cambridge
John Robertson
John Robertson University of Cambridge
Kinam Kim
Kinam Kim Samsung (South Korea)
Jeong Sook Ha
Jeong Sook Ha Korea University

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