World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
17190
World Ranking
2350
National Ranking
63

Materials Science

D-Index
53
Citations
17243
World Ranking
9065
National Ranking
394

Overview

U-In Chung is a researcher affiliated with Samsung in South Korea, focusing primarily on materials science and engineering. Their work spans the study of electronic, optical, and magnetic materials, materials chemistry, electrical and electronic engineering, and computational mechanics.

Their research contributions include investigations into the structural and functional properties of complex materials, particularly multiferroics and related materials, ferroelectric and piezoelectric materials, as well as magnetic and transport properties of perovskites and related materials. In addition, their work covers semiconductor materials and devices, diamond and carbon-based materials research, and ion-surface interactions and analysis.

U-In Chung has published research in various scientific venues, with two recent papers:

  • Structural properties and polarization switching of epitaxial Bi2FeCrO6 thin films grown on La2/3Sr1/3MnO3/SrTiO3 (111) substrates, 2022, Thin Solid Films
  • Selective Etching of Multi-Stacked Epitaxial Si1-xGex on Si Using CF4/N2 and CF4/O2 Plasma Chemistries for 3D Device Applications, 2025, Materials

Their frequent co-authors include L. Wendling, Xavier Henning, F. Roulland, M. Lenertz, and G. Versini, indicating collaborations within interdisciplinary materials science communities.

U-In Chung's main fields of study are divided across:

  • Materials Science
  • Engineering

Their specialized subfields comprise:

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Computational Mechanics

The research themes of U-In Chung include:

  • Multiferroics and related materials
  • Ferroelectric and Piezoelectric Materials
  • Magnetic and transport properties of perovskites and related materials
  • Semiconductor materials and devices
  • Diamond and Carbon-based Materials Research
  • Ion-surface interactions and analysis

Best Publications

  • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

    Myoung-Jae Lee;Chang Bum Lee;Dongsoo Lee;Seung Ryul Lee

  • Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

    Chwee-Lin Choong;Mun-Bo Shim;Byoung-Sun Lee;Sanghun Jeon;Sanghun Jeon

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

    I.G. Baek;M.S. Lee;S. Seo;M.J. Lee

  • Electrical observations of filamentary conductions for the resistive memory switching in NiO films

    D. C. Kim;S. Seo;S. E. Ahn;D.-S. Suh

  • Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory

    Jaehoon Jang;Han-Soo Kim;Wonseok Cho;Hoosung Cho

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • Flutter-driven triboelectrification for harvesting wind energy

    Jihyun Bae;Jeongsu Lee;SeongMin Kim;Jaewook Ha

  • In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

    Gyeong-Su Park;Young Bae Kim;Seong Yong Park;Xiang Shu Li

  • An edge contact type cell for Phase Change RAM featuring very low power consumption

    Y.H. Ha;J.H. Yi;H. Horii;J.H. Park

  • Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies

    Y.N. Hwang;J.S. Hong;S.H. Lee;S.J. Ahn

  • Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

    Sungsik Lee;Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson

  • Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb

    S.L. Cho;J.H. Yi;Y.H. Ha;B.J. Kuh

  • Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

    I.G. Baek;D.C. Kim;M.J. Lee;H.-J. Kim

  • p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

    Injun Hwang;Jongseob Kim;Hyuk Soon Choi;Hyoji Choi

  • Improvement of resistive memory switching in NiO using IrO2

    D. C. Kim;M. J. Lee;S. E. Ahn;S. Seo

  • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Chang-Jung Kim;Sangwook Kim;Je-Hun Lee;Jin-Seong Park

  • Novel cell structure of PRAM with thin metal layer inserted GeSbTe

    J.H. Yi;Y.H. Ha;J.H. Park;B.J. Kuh

  • Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers

    T. Park;S. Choi;D.H. Lee;J.R. Yoo

  • Bi-layered RRAM with unlimited endurance and extremely uniform switching

    Young-Bae Kim;Seung Ryul Lee;Dongsoo Lee;Chang Bum Lee

Frequent Co-Authors

Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Kinam Kim
Kinam Kim Samsung (South Korea)
Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
Myoung-Jae Lee
Myoung-Jae Lee Daegu Gyeongbuk Institute of Science and Technology
Arokia Nathan
Arokia Nathan University of Cambridge
Sunil Kim
Sunil Kim Samsung (South Korea)
Young-soo Park
Young-soo Park Korea University
John Robertson
John Robertson University of Cambridge
Jong-Ho Lee
Jong-Ho Lee Soongsil University

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