World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
11633
World Ranking
5676
National Ranking
197

Overview

Sunil Kim is affiliated with Samsung in South Korea. The research focus encompasses fields in dentistry and medicine, with significant work in subfields such as oral surgery, molecular biology, orthodontics, biomedical engineering, and emergency medical services.

The scientist's primary areas of study include endodontics and root canal treatments, dental radiography and imaging, dental materials and restorations, dental trauma and treatments, dental development and anomalies, dental implant techniques and outcomes, and mesenchymal stem cell research.

Sunil Kim's scholarly output includes publications in several notable venues, with frequent contributions to the Journal of Endodontics, International Endodontic Journal, Materials, BMC Oral Health, and Archives of Oral Biology.

  • Actuating compact wearable augmented reality devices by multifunctional artificial muscle (2022, Nature Communications)
  • Comparison of Biocompatibility of Calcium Silicate-Based Sealers and Epoxy Resin-Based Sealer on Human Periodontal Ligament Stem Cells (2020, Materials)
  • Single-Cell RNA Sequencing Analysis of Human Dental Pulp Stem Cell and Human Periodontal Ligament Stem Cell (2021, Journal of Endodontics)
  • Dentists' clinical decision-making about teeth with apical periodontitis using a variable-controlled survey model in South Korea (2020, BMC Oral Health)
  • The application of "bone window technique" using piezoelectric saws and a CAD/CAM-guided surgical stent in endodontic microsurgery on a mandibular molar case (2020, Restorative Dentistry & Endodontics)

Frequent collaborative partners in research include Euiseong Kim, Sukjoon Lee, Su-Jung Shin, Ukseong Kim, and Ahmed Elhakim.

Best Publications

  • Thin film transistor, method of manufacturing the same, and flat panel display having the same

    Jae-Chul Park;Chang-Jung Kim;Sun-Il Kim;I-hun Song

  • Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

    Jin-Seong Park;Jae Kyeong Jeong;Yeon-Gon Mo;Hye Dong Kim

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • High-Performance Oxide Thin Film Transistors Passivated by Various Gas Plasmas

    Sangwook Kim;Jaechul Park;Changjung Kim;Sunil Kim

  • All-solid-state spatial light modulator with independent phase and amplitude control for three-dimensional LiDAR applications

    Junghyun Park;Byung Gil Jeong;Sun Il Kim;Duhyun Lee

  • Thin film transistors and methods of manufacturing the same

    Sun-Il Kim;Young-soo Park;Jae-Chul Park

  • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Chang-Jung Kim;Sangwook Kim;Je-Hun Lee;Jin-Seong Park

  • High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

    Jaechul Park;Sangwook Kim;Changjung Kim;Sunil Kim

  • Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

    Jun Hee Choi;Jun Hee Choi;Andrei Zoulkarneev;Sun Il Kim;Chan Wook Baik

  • Thin film transistor and method of forming the same

    Jae-Chul Park;Young-soo Park;Sun-Il Kim

  • Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers

    Jae Chul Park;Sangwook Kim;Sunil Kim;Changjung Kim

  • Oxide semiconductors and thin film transistors comprising the same

    Chang-Jung Kim;Sang-Wook Kim;Sun-Il Kim

  • Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

    Jaechul Park;Ihun Song;Sunil Kim;Sangwook Kim

  • Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

    Kichan Jeon;Changjung Kim;Ihun Song;Jaechul Park

  • Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

    Ihun Song;Sunil Kim;Huaxiang Yin;Chang Jung Kim

  • Method of operating inverter

    Sangwook Kim;Ihun Song;Changjung Kim;Jaechul Park

  • 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

    Sanghun Jeon;Sungho Park;Ihun Song;Ji-Hyun Hur

  • Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

    Jaechul Park;Changjung Kim;Sunil Kim;Ihun Song

  • Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

    Huaxiang Yin;Sunil Kim;Chang Jung Kim;Ihun Song

  • Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment

    Sangwook Kim;Jaechul Park;Changjung Kim;Ihun Song

Frequent Co-Authors

Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Young-soo Park
Young-soo Park Korea University
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Jong Min Kim
Jong Min Kim University of Cambridge
U-In Chung
U-In Chung Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Miyoung Kim
Miyoung Kim Seoul National University
Jin-Seong Park
Jin-Seong Park Hanyang University
Sang-Wook Kim
Sang-Wook Kim Ajou University
Young Hee Lee
Young Hee Lee Sungkyunkwan University

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