World's Best Scientists 2026 revealed!
Young-soo Park

Young-soo Park

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
17423
World Ranking
2583
National Ranking
74

Materials Science

D-Index
53
Citations
18179
World Ranking
9059
National Ranking
392

Overview

Young-soo Park is affiliated with Korea University in South Korea. Their research work focuses primarily on the intersection of neuroscience and engineering, with particular contributions to neural dynamics and brain function.

The fields of study that characterize their work include:

  • Neuroscience
  • Engineering

The subfields of study relevant to their research encompass:

  • Electrical and Electronic Engineering
  • Cellular and Molecular Neuroscience
  • Cognitive Neuroscience

The main topics addressed in their research are:

  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering
  • Neural dynamics and brain function

Young-soo Park has published at least one recent paper titled "Integrate-and-Fire Neuron Circuit Without External Bias Voltages", which appeared in 2021 in the journal Frontiers in Neuroscience. This publication has been cited 18 times, indicating engagement by the scientific community.

Throughout their research career, frequent co-authors have included:

  • Sola Woo
  • Doohyeok Lim
  • Kyoungah Cho
  • Sangsig Kim

Their work has been published in venues such as:

  • Frontiers in Neuroscience

Best Publications

  • ZnO THIN FILM TRANSISTOR

    Dong-Hoon Kang;Shojun Kin;Young-Soo Park;I-Hun Song

  • Thin film transistor, method of manufacturing the same, and flat panel display having the same

    Jae-Chul Park;Chang-Jung Kim;Sun-Il Kim;I-hun Song

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

    Myoung-Jae Lee;Youngsoo Park;Dong-Seok Suh;Eun-Hong Lee

  • Catalytic Growth of β-Ga2O3 Nanowires by Arc Discharge.

    Young Chul Choi;Won Seok Kim;Young Soo Park;Seung Mi Lee

  • Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

    Myoung-Jae Lee;Seungwu Han;Sang Ho Jeon;Bae Ho Park

  • Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

    Donghun Kang;Hyuck Lim;Changjung Kim;Ihun Song

  • Thin film transistor having a graded metal oxide layer

    Dong-hun Kang;Stefanovich Genrikh;I-hun Song;Young-soo Park

  • Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

    Myoung-Jae Lee;Sun I. Kim;Chang B. Lee;Huaxiang Yin

  • 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

    Myoung-Jae Lee;Youngsoo Park;Bo-Soo Kang;Seung-Eon Ahn

  • Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Chang-Jung Kim;Sangwook Kim;Je-Hun Lee;Jin-Seong Park

  • Write Current Reduction in Transition Metal Oxide Based Resistance-Change Memory**

    Seung-Eon Ahn;Myoung-Jae Lee;Youngsoo Park;Bo Soo Kang

  • High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

    Jaechul Park;Sangwook Kim;Changjung Kim;Sunil Kim

  • Thin film transistor and method of forming the same

    Jae-Chul Park;Young-soo Park;Sun-Il Kim

  • Semiconductor memory device and method of fabricating the same

    Jung-hyun Lee;Young-soo Park;Won-tae Lee

  • Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

    Sangwon Lee;Sungwook Park;Sungchul Kim;Yongwoo Jeon

  • Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution

    Kyoung-Kook Kim;Sam-Dong Lee;Hyunsoo Kim;Jae-Chul Park

  • Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers

    Jae Chul Park;Sangwook Kim;Sunil Kim;Changjung Kim

  • A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

    Myoung-Jae Lee;Dongsoo Lee;Seong-Ho Cho;Ji-Hyun Hur

  • High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications

    Bo Soo Kang;Seung-Eon Ahn;Myoung-Jae Lee;Genrikh Stefanovich

Frequent Co-Authors

Sunil Kim
Sunil Kim Samsung (South Korea)
Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Nayoung Kim
Nayoung Kim Seoul National University Bundang Hospital
Myoung-Jae Lee
Myoung-Jae Lee Daegu Gyeongbuk Institute of Science and Technology
Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
Jang-Yeon Kwon
Jang-Yeon Kwon Yonsei University
Hye Seung Lee
Hye Seung Lee Seoul National University Bundang Hospital
Suk-Ho Choi
Suk-Ho Choi Kyung Hee University
U-In Chung
U-In Chung Samsung (South Korea)
Dong Myong Kim
Dong Myong Kim Kookmin University

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