H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 97 Citations 23,909 197 World Ranking 54 National Ranking 34
Materials Science H-index 106 Citations 27,465 204 World Ranking 318 National Ranking 141

Overview

What is he best known for?

The fields of study he is best known for:

  • Integrated circuit
  • Semiconductor
  • Transistor

The scientist’s investigation covers issues in Optoelectronics, Gate oxide, Dielectric, Atomic layer deposition and Electrical engineering. His Gate oxide study integrates concerns from other disciplines, such as Oxide, Gate dielectric and Oxide thin-film transistor. In his study, which falls under the umbrella issue of Gate dielectric, Cerium oxide is strongly linked to Electronic engineering.

His Dielectric research is multidisciplinary, incorporating perspectives in Equivalent oxide thickness and Capacitor. He interconnects Inorganic chemistry and Hafnium in the investigation of issues within Atomic layer deposition. His research in Layer intersects with topics in Hafnium oxide and Zirconium.

His most cited work include:

  • Atomic layer-deposited laaio3 films for gate dielectrics (361 citations)
  • Lanthanide oxide / hafnium oxide dielectric layers (297 citations)
  • Structure and method for a high performance electronic packaging assembly (287 citations)

What are the main themes of his work throughout his whole career to date?

Kie Y. Ahn mainly investigates Optoelectronics, Dielectric, Layer, Substrate and Atomic layer deposition. His research integrates issues of Oxide, Transistor, Gate oxide, Electronic engineering and Electrical engineering in his study of Optoelectronics. His study looks at the relationship between Gate oxide and fields such as Gate dielectric, as well as how they intersect with chemical problems.

His study in Dielectric is interdisciplinary in nature, drawing from both Inorganic chemistry, Lanthanum, Equivalent oxide thickness and Capacitor. Kie Y. Ahn has researched Layer in several fields, including Electrical conductor, Dopant and Line. His Atomic layer deposition research integrates issues from Titanium oxide, Aluminum oxide and Zirconium.

He most often published in these fields:

  • Optoelectronics (62.47%)
  • Dielectric (34.52%)
  • Layer (31.51%)

What were the highlights of his more recent work (between 2006-2015)?

  • Optoelectronics (62.47%)
  • Dielectric (34.52%)
  • Inorganic chemistry (25.21%)

In recent papers he was focusing on the following fields of study:

Kie Y. Ahn mainly focuses on Optoelectronics, Dielectric, Inorganic chemistry, Atomic layer deposition and Oxide. His Optoelectronics research is multidisciplinary, relying on both Layer and Transistor, Equivalent oxide thickness, Gate oxide. His Equivalent oxide thickness research incorporates themes from Silicon oxide and Oxide thin-film transistor.

His High-κ dielectric study in the realm of Dielectric interacts with subjects such as Lanthanide. His biological study spans a wide range of topics, including Monolayer, Substrate and Chemical engineering. His Atomic layer deposition research is within the category of Composite material.

Between 2006 and 2015, his most popular works were:

  • Hafnium tantalum titanium oxide films (239 citations)
  • Hafnium tantalum oxide dielectrics (44 citations)
  • Zirconium-doped zinc oxide structures and methods (41 citations)

In his most recent research, the most cited papers focused on:

  • Integrated circuit
  • Semiconductor
  • Transistor

Kie Y. Ahn focuses on Optoelectronics, Inorganic chemistry, Oxide, Dielectric and Monolayer. His work carried out in the field of Optoelectronics brings together such families of science as Electrical engineering, Gate oxide and Atomic layer deposition. The Inorganic chemistry study combines topics in areas such as Equivalent oxide thickness and Dielectric layer.

Kie Y. Ahn works mostly in the field of Equivalent oxide thickness, limiting it down to topics relating to Electronics and, in certain cases, Integrated circuit. His Dielectric study incorporates themes from Layer, Electronic engineering, Lanthanum and Gate dielectric. As a member of one scientific family, Kie Y. Ahn mostly works in the field of High-κ dielectric, focusing on Transistor and, on occasion, Capacitor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Atomic layer-deposited LaAlO3 films for gate dielectrics

Kie Y. Ahn;Leonard Forbes.
(2002)

502 Citations

Structure and method for a high performance electronic packaging assembly

Kie Y. Ahn;Leonard Forbes;Eugene H. Cloud.
(2001)

437 Citations

Atomic layer deposited dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2004)

413 Citations

Lanthanide oxide / hafnium oxide dielectric layers

Kie Y. Ahn;Leonard Forbes.
(2004)

401 Citations

Memory cell having a vertical transistor with buried source/drain and dual gates

Wendell P. Noble;Leonard Forbes;Kie Y. Ahn.
(2000)

399 Citations

4 F2 folded bit line DRAM cell structure having buried bit and word lines

Wendell P. Noble;Leonard Forbes;Kie Y. Ahn.
(2000)

383 Citations

Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics

Kie Y. Ahn;Leonard Forbes.
(2002)

357 Citations

Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers

Kie Y. Ahn;Leonard Forbes.
(2003)

351 Citations

ATOMIC LAYER DEPOSITION OF Zrx Hfy Sn1-x-y O2 FILMS AS HIGH k GATE DIELECTRICS

Kie Y. Ahn;Leonard Forbes.
(2005)

324 Citations

Atomic layer deposition of CMOS gates with variable work functions

Leonard Forbes;Kie Y. Ahn.
(2004)

323 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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