The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Non-volatile memory, Memory cell and Dielectric. His Optoelectronics research is mostly focused on the topic High-κ dielectric. In general Electrical engineering study, his work on Insulator, Transistor and Gate stack often relates to the realm of Polymer capacitor, thereby connecting several areas of interest.
His research in Non-volatile memory tackles topics such as Low voltage which are related to areas like EEPROM and Work function. His work in Memory cell tackles topics such as Node which are related to areas like Semiconductor memory, Volatile memory, Anode, Line and Diode. His Electronic engineering study incorporates themes from Layer and Silicon-germanium.
His primary areas of study are Optoelectronics, Electrical engineering, Memory cell, Transistor and Dielectric. His Optoelectronics study combines topics from a wide range of disciplines, such as Electronic engineering and Thin-film transistor. His Electrical engineering research is multidisciplinary, incorporating perspectives in Layer and Body region.
His research investigates the connection with Memory cell and areas like Quantum tunnelling which intersect with concerns in Blocking. His Transistor research includes themes of Semiconductor and Thyristor. His research in the fields of High-κ dielectric overlaps with other disciplines such as Electronic systems and Lanthanide.
Arup Bhattacharyya mainly focuses on Optoelectronics, Dielectric, Memory cell, Quantum tunnelling and Non-volatile memory. His biological study spans a wide range of topics, including Layer and Semiconductor device. His work on High-κ dielectric is typically connected to Electronic systems, Oxygen and Lanthanide as part of general Dielectric study, connecting several disciplines of science.
The concepts of his Quantum tunnelling study are interwoven with issues in Blocking, Electrical engineering and Low voltage. His Electrical engineering study integrates concerns from other disciplines, such as Band gap and Charge retention. His Non-volatile memory research incorporates themes from Universal memory and Dram.
Optoelectronics, Dielectric, Electronic systems, Charge and Memory cell are his primary areas of study. His primary area of study in Optoelectronics is in the field of Silicon. His work deals with themes such as Dynamic random-access memory, Chemical engineering and Parallel computing, which intersect with Dielectric.
Throughout his Electronic systems studies, Arup Bhattacharyya incorporates elements of other sciences such as High-κ dielectric, Metal electrodes, Aluminum oxynitride, Monolayer and Atomic layer deposition. His Charge studies intersect with other subjects such as Nanodot, Optics, Blocking, Electrical engineering and Erasure. His research integrates issues of Dram, Nanocrystal, Non-volatile memory, Universal memory and Quantum tunnelling in his study of Memory cell.
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Hafnium aluminium oxynitride high-K dielectric and metal gates
Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya.
(2006)
Hafnium tantalum oxynitride dielectric
Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya.
(2009)
Scalable gate and storage dielectric
Arup Bhattacharyya.
(2005)
Scalable flash/NV structures and devices with extended endurance
Arup Bhattacharyya.
(2006)
Tantalum lanthanide oxynitride films
Leonard Forbes;Kie Y. Ahn;Arup Bhattacharyya.
(2006)
Methods of forming reverse mode non-volatile memory cell structures
Arup Bhattacharyya.
(2012)
One transistor SOI non-volatile random access memory cell
Arup Bhattacharyya.
(2004)
Asymmetric band-gap engineered nonvolatile memory device
Arup Bhattacharyya.
(2005)
Memory cells configured to allow for erasure by enhanced f-n tunneling of holes from a control gate to a charge trapping material
Arup Bhattacharyya;Kirk D. Prall;Luan C. Tran.
(2010)
Stable PD-SOI devices and methods
Arup Bhattacharyya.
(2004)
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L. Forbes and Associates LLC
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