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D-Index & Metrics

Materials Science

D-Index
61
Citations
10384
World Ranking
6897
National Ranking
1733

John Tolle publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John Tolle sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 234 publications — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

John Tolle D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John Tolle sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

John Tolle is affiliated with Arizona State University in the United States and conducts research primarily in the field of Engineering.

Their work focuses significantly on Electrical and Electronic Engineering, covering 25 publications, along with contributions to Atomic and Molecular Physics, and Optics, Biomedical Engineering, Ocean Engineering, and Mechanical Engineering. The primary areas of research include Photonic and Optical Devices, Photonic Crystals and Applications, Advanced Photonic Communication Systems, Nanowire Synthesis and Applications, Advanced Fiber Optic Sensors, Semiconductor Lasers and Optical Devices, and Integrated Circuits and Semiconductor Failure Analysis.

Tolle has published in several venues, with frequent contributions to ECS Meeting Abstracts and the Conference on Lasers and Electro-Optics, each featuring two publications. Other publication venues include arXiv (Cornell University), Optica, and Photonics Research.

Recent papers authored or co-authored by John Tolle include:

  • Electrically injected GeSn lasers on Si operating up to 100 K (2020, Optica)
  • Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021, Photonics Research)
  • Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate (2020, Applied Physics Letters)
  • X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures (2020, Semiconductor Science and Technology)
  • Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications (2022, IEEE Photonics Journal)

Tolle collaborates with several frequent co-authors, including Joe Margetis, Shui-Qing Yu, Yiyin Zhou, Solomon Ojo, and Gregory J. Salamo, reflecting ongoing partnerships in their research efforts.

Best Publications

  • Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

    E. Moreau;I. Robert;J. M. Gérard;I. Abram

  • Ge–Sn semiconductors for band-gap and lattice engineering

    M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya

  • An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

    Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  • Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

    Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  • Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

    J. Mathews;R. T. Beeler;J. Tolle;C. Xu

  • Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

    John Kouvetakis;Matthew Bauer;John Tolle;Candi Cook

  • Methods of forming films including germanium tin and structures and devices including the films

    John Tolle

  • Tin precursors for vapor deposition and deposition processes

    John Tolle

  • Removable substrate tray and assembly and reactor including same

    Eric Hill;John Tolle;Matthew Goodman

  • Method and system for in situ formation of gas-phase compounds

    John Tolle;Eric Hill;Jereld Lee Winkler

  • Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

    Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  • Methods of forming highly p-type doped germanium tin films and structures and devices including the films

    Joe Margetis;John Tolle

  • Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

    Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  • Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Thach Pham;Wei Du;Huong Tran;Joe Margetis

  • Raman scattering in Ge1−ySny alloys

    V. R. D'Costa;J. Tolle;R. Roucka;C. D. Poweleit

  • Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

    V. R. D'Costa;Y. Y. Fang;J. Tolle;John Kouvetakis

  • Formation of epitaxial layers via dislocation filtering

    Joe Margetis;John Tolle

  • Methods of forming silicon germanium tin films and structures and devices including the films

    Joe Margetis;John Tolle

  • Structures and devices including germanium-tin films and methods of forming same

    John Tolle

  • Advances in SiGeSn technology

    Richard A. Soref;John Kouvetakis;John Tolle;Jose Menendez

  • Reactor system for sublimation of pre-clean byproducts and method thereof

    John Tolle;Eric Hill

  • Si-based GeSn photodetectors towards mid-infrared imaging applications

    Huong Tran;Thach Pham;Joe Margetis;Yiyin Zhou

Frequent Co-Authors

Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Wei Du
Wei Du University of Arkansas at Fayetteville
John Kouvetakis
John Kouvetakis Arizona State University
Richard A. Soref
Richard A. Soref University of Massachusetts Boston
Greg Sun
Greg Sun University of Massachusetts Boston
Jose Menendez
Jose Menendez Arizona State University
Jifeng Liu
Jifeng Liu Dartmouth College
Peter A. Crozier
Peter A. Crozier Arizona State University
Yong-Hang Zhang
Yong-Hang Zhang Arizona State University

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