World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
61
Citations
10384
World Ranking
6899
National Ranking
1735

Overview

John Tolle is affiliated with Arizona State University in the United States and conducts research primarily in the field of Engineering.

Their work focuses significantly on Electrical and Electronic Engineering, covering 25 publications, along with contributions to Atomic and Molecular Physics, and Optics, Biomedical Engineering, Ocean Engineering, and Mechanical Engineering. The primary areas of research include Photonic and Optical Devices, Photonic Crystals and Applications, Advanced Photonic Communication Systems, Nanowire Synthesis and Applications, Advanced Fiber Optic Sensors, Semiconductor Lasers and Optical Devices, and Integrated Circuits and Semiconductor Failure Analysis.

Tolle has published in several venues, with frequent contributions to ECS Meeting Abstracts and the Conference on Lasers and Electro-Optics, each featuring two publications. Other publication venues include arXiv (Cornell University), Optica, and Photonics Research.

Recent papers authored or co-authored by John Tolle include:

  • Electrically injected GeSn lasers on Si operating up to 100 K (2020, Optica)
  • Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021, Photonics Research)
  • Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate (2020, Applied Physics Letters)
  • X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures (2020, Semiconductor Science and Technology)
  • Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications (2022, IEEE Photonics Journal)

Tolle collaborates with several frequent co-authors, including Joe Margetis, Shui-Qing Yu, Yiyin Zhou, Solomon Ojo, and Gregory J. Salamo, reflecting ongoing partnerships in their research efforts.

Best Publications

  • Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

    E. Moreau;I. Robert;J. M. Gérard;I. Abram

  • Ge–Sn semiconductors for band-gap and lattice engineering

    M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya

  • An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

    Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  • Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

    Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  • Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

    J. Mathews;R. T. Beeler;J. Tolle;C. Xu

  • Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

    John Kouvetakis;Matthew Bauer;John Tolle;Candi Cook

  • Methods of forming films including germanium tin and structures and devices including the films

    John Tolle

  • Tin precursors for vapor deposition and deposition processes

    John Tolle

  • Removable substrate tray and assembly and reactor including same

    Eric Hill;John Tolle;Matthew Goodman

  • Method and system for in situ formation of gas-phase compounds

    John Tolle;Eric Hill;Jereld Lee Winkler

  • Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

    Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  • Methods of forming highly p-type doped germanium tin films and structures and devices including the films

    Joe Margetis;John Tolle

  • Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

    Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  • Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Thach Pham;Wei Du;Huong Tran;Joe Margetis

  • Raman scattering in Ge1−ySny alloys

    V. R. D'Costa;J. Tolle;R. Roucka;C. D. Poweleit

  • Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

    V. R. D'Costa;Y. Y. Fang;J. Tolle;John Kouvetakis

  • Formation of epitaxial layers via dislocation filtering

    Joe Margetis;John Tolle

  • Methods of forming silicon germanium tin films and structures and devices including the films

    Joe Margetis;John Tolle

  • Structures and devices including germanium-tin films and methods of forming same

    John Tolle

  • Advances in SiGeSn technology

    Richard A. Soref;John Kouvetakis;John Tolle;Jose Menendez

  • Reactor system for sublimation of pre-clean byproducts and method thereof

    John Tolle;Eric Hill

  • Si-based GeSn photodetectors towards mid-infrared imaging applications

    Huong Tran;Thach Pham;Joe Margetis;Yiyin Zhou

Frequent Co-Authors

Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Wei Du
Wei Du University of Arkansas at Fayetteville
John Kouvetakis
John Kouvetakis Arizona State University
Richard A. Soref
Richard A. Soref University of Massachusetts Boston
Greg Sun
Greg Sun University of Massachusetts Boston
Jose Menendez
Jose Menendez Arizona State University
Jifeng Liu
Jifeng Liu Dartmouth College
Peter A. Crozier
Peter A. Crozier Arizona State University
Yong-Hang Zhang
Yong-Hang Zhang Arizona State University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing John Tolle

Trending Scientists

Recently Published Articles