John Tolle mostly deals with Chemical vapor deposition, Optoelectronics, Epitaxy, Germanium and Tin. John Tolle has included themes like Optics, Semiconductor, Specific detectivity, Responsivity and Electronic band structure in his Chemical vapor deposition study. In his study, Wavelength is strongly linked to Laser, which falls under the umbrella field of Optoelectronics.
His Dislocation research extends to Epitaxy, which is thematically connected. His Tin research also works with subjects such as
His primary areas of investigation include Optoelectronics, Chemical vapor deposition, Epitaxy, Silicon and Analytical chemistry. His Optoelectronics study often links to related topics such as Laser. His Chemical vapor deposition research includes elements of Double heterostructure, Lattice constant, Optics and Germanium.
His work investigates the relationship between Epitaxy and topics such as Transmission electron microscopy that intersect with problems in Crystallography and Diffraction. John Tolle combines subjects such as Thin film, Temperature measurement and Substrate with his study of Silicon. John Tolle interconnects Ellipsometry and Doping in the investigation of issues within Analytical chemistry.
Optoelectronics, Laser, Photodetector, Epitaxy and Photonics are his primary areas of study. His Optoelectronics research focuses on Wavelength, Chemical vapor deposition and Silicon. His studies in Chemical vapor deposition integrate themes in fields like Reactivity, Metastability and Thermochemistry.
His Silicon research is multidisciplinary, incorporating elements of Band gap and Gallium. His Laser study integrates concerns from other disciplines, such as Direct and indirect band gaps, Operating temperature and Heterojunction. His research integrates issues of Nanowire, Doping, Semiconductor and Boron in his study of Epitaxy.
John Tolle mainly investigates Optoelectronics, Laser, Semiconductor, Direct and indirect band gaps and Lasing threshold. His biological study spans a wide range of topics, including In situ, Infrared and Detector. His Laser study combines topics from a wide range of disciplines, such as Photonics and Silicon.
His work in the fields of Silicon, such as Silicon photonics, intersects with other areas such as Mixing. His study on Direct and indirect band gaps also encompasses disciplines like
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Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs
John Kouvetakis;Matthew Bauer;John Tolle;Candi Cook.
Methods of forming films including germanium tin and structures and devices including the films
Tin precursors for vapor deposition and deposition processes
Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
J. Mathews;R. T. Beeler;J. Tolle;C. Xu.
Applied Physics Letters (2010)
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham.
Applied Physics Letters (2016)
Removable substrate tray and assembly and reactor including same
Eric Hill;John Tolle;Matthew Goodman.
Method and system for in situ formation of gas-phase compounds
John Tolle;Eric Hill;Jereld Lee Winkler.
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh.
Applied Physics Letters (2014)
Methods of forming highly p-type doped germanium tin films and structures and devices including the films
Joe Margetis;John Tolle.
Formation of epitaxial layers via dislocation filtering
Joe Margetis;John Tolle.
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